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Электронный компонент: TICP206M

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TICP206 SERIES
SILICON TRIACS
P R O D U C T I N F O R M A T I O N
1
MARCH 1988 - REVISED MARCH 1997
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright 1997, Power Innovations Limited, UK
q
1.5 A RMS
q
Glass Passivated Wafer
q
400 V to 600 V Off-State Voltage
q
Max I
GT
of 10 mA
q
Package Options
PACKAGE
PACKING
PART # SUFFIX
LP
Bulk
(None)
LP with fomed leads
Tape and Reel
R
LP PACKAGE
(TOP VIEW)
MDC2AA
G
MT2
MT1
1
2
3
LP PACKAGE
WITH FORMED LEADS
(TOP VIEW)
G
MDC2AB
MT2
MT1
1
2
3
absolute maximum ratings
over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85C derate linearly to 110C case temperature at
the rate of 60 mA/C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage (see Note 1)
TICP206D
TICP206M
V
DRM
400
600
V
Full-cycle RMS on-state current at (or below) 85C case temperature (see Note 2)
I
T(RMS)
1.5
A
Peak on-state surge current full-sine-wave (see Note 3)
I
TSM
10
A
Peak on-state surge current half-sine-wave (see Note 4)
I
TSM
12
A
Peak gate current
I
GM
0.2
A
Average gate power dissipation at (or below) 85C case temperature (see Note 5)
P
G(AV)
0.3
W
Operating case temperature range
T
C
-40 to +110
C
Storage temperature range
T
stg
-40 to +125
C
Lead temperature 1.6 mm from case for 10 seconds
T
L
230
C
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
DRM
Repetitive peak off-
state current
V
D
= rated V
DRM
I
G
= 0
20
A
I
GTM
Peak gate trigger
current
V
supply
= +12 V
V
supply
= +12 V
V
supply
= -12 V
V
supply
= -12 V
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
t
p(g)
> 20
s
t
p(g)
> 20
s
t
p(g)
> 20
s
t
p(g)
> 20
s
8
-8
-8
10
mA
V
GTM
Peak gate trigger
voltage
V
supply
= +12 V
V
supply
= +12 V
V
supply
= -12 V
V
supply
= -12 V
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
t
p(g)
> 20
s
t
p(g)
> 20
s
t
p(g)
> 20
s
t
p(g)
> 20
s
2.5
-2.5
-2.5
2.5
V
All voltages are with respect to Main Terminal 1.
TICP206 SERIES
SILICON TRIACS
2
MARCH 1988 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
All voltages are with respect to Main Terminal 1.
NOTES: 6. This parameter must be measured using pulse techniques, t
p
=
1 ms, duty cycle
2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
7. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics:
R
G
= 100
, t
p(g)
= 20
s, t
r
=
15 ns, f = 1 kHz.
V
TM
Peak on-state
voltage
I
TM
= 1 A
I
G
= 50 mA
(see Note 6)
2.2
V
I
H
Holding current
V
supply
= +12 V
V
supply
= -12 V
I
G
= 0
I
G
= 0
Init' I
TM
= 100 mA
Init' I
TM
= -100 mA
30
-30
mA
I
L
Latching current
V
supply
= +12 V
V
supply
= -12 V
(see Note 7)
40
-40
mA
electrical characteristics at 25C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
GATE TRIGGER CURRENT
T
C
- Case Temperature - C
-60
-40
-20
0
20
40
60
80
100
120
I
G
T

-

G
a
t
e

T
r
i
g
g
e
r

C
u
r
r
e
n
t

-

m
A
01
1
10
100
1000
TC05AA
TEMPERATURE
vs
V
supply
I
GTM
+ +
+ -
- -
- +
V
AA
= 12 V
R
L
= 10
t
p(g)
= 20 s
GATE TRIGGER VOLTAGE
T
C
- Case Temperature - C
-60
-40
-20
0
20
40
60
80
100
120
V
G
T

-

G
a
t
e

T
r
i
g
g
e
r

V
o
l
t
a
g
e

-

V
01
1
10
TC05AB
TEMPERATURE
vs
V
supply
I
GTM
+ +
+ -
- -
- +
}
}
V
AA
= 12 V
R
L
= 10
t
p(g)
= 20 s
3
MARCH 1988 - REVISED MARCH 1997
TICP206 SERIES
SILICON TRIACS
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 3.
Figure 4.
Figure 5.
HOLDING CURRENT
T
C
- Case Temperature - C
-60
-40
-20
0
20
40
60
80
100
120
I
H

-

H
o
l
d
i
n
g

C
u
r
r
e
n
t

-

m
A
01
1
10
100
TC05AD
CASE TEMPERATURE
vs
V
supply
+
-
V
AA
= 12 V
I
G
= 0
Initiating I
TM
= 100 mA
GATE FORWARD VOLTAGE
I
GF
- Gate Forward Current - A
00001
0001
001
01
1
V
G
F

-

G
a
t
e

F
o
r
w
a
r
d

V
o
l
t
a
g
e

-

V
001
01
1
10
TC05AC
GATE FORWARD CURRENT
vs
I
A
= 0
T
C
= 25 C
QUADRANT 1
LATCHING CURRENT
T
C
- Case Temperature - C
-60
-40
-20
0
20
40
60
80
100
120
I
L

-

L
a
t
c
h
i
n
g

C
u
r
r
e
n
t

-

m
A
1
10
100
TC05AE
CASE TEMPERATURE
vs
V
AA
= 12 V
V
supply
I
GTM
+ +
+ -
- -
- +
TICP206 SERIES
SILICON TRIACS
4
MARCH 1988 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
LP003 (TO-92)
3-pin cylindical plastic package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
ALL LINEAR DIMENSIONS IN MILLIMETERS
12,7 MIN.
2,03
2,67
4,44
5,21
3,43 MIN.
4,32
5,34
0,40
0,56
1,14
1,40
2,41
2,67
0,35
0,41
2,03
2,67
3,17
4,19
(see Note A)
Seating Plane
1
2
3
LP003 (TO-92)
LP003 Falls Within JEDEC
TO-226AA Dimensions
MDXXAX
1,27
NOTE A: Lead dimensions are not controlled in this area.
ALL LINEAR DIMENSIONS IN MILLIMETERS
12,7 MIN.
2,03
2,67
4,44
5,21
3,43 MIN.
4,32
5,34
0,40
0,56
1,14
1,40
2,41
2,67
0,35
0,41
2,03
2,67
3,17
4,19
(see Note A)
Seating Plane
1
2
3
LP003 (TO-92)
LP003 Falls Within JEDEC
TO-226AA Dimensions
MDXXAX
1,27
NOTE A: Lead dimensions are not controlled in this area.
5
MARCH 1988 - REVISED MARCH 1997
TICP206 SERIES
SILICON TRIACS
P R O D U C T I N F O R M A T I O N
LP003 (TO-92)
3-pin cylindical plastic package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
LP003 (TO-92) - Formed Leads Version
ALL LINEAR DIMENSIONS IN MILLIMETERS
2,03
2,67
4,44
5,21
3,43 MIN.
4,32
5,34
0,40
0,56
2,40
2,90
0,35
0,41
2,03
2,67
3,17
4,19
4,00 MAX.
2,90
2,40
LP003 Falls Within JEDEC
TO-226AA Dimensions
1
2
3
MDXXAR