1
SEPTEMBER 2001 - REVISED MAY 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
TISP4070J1BJ THRU TISP4395J1BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Description
Ground Return Element of Y Configuration
-2x Current Capability of Y Upper Elements
-Available in a Wide Range of Voltages
-Enables Symmetrical and Asymmetrical Y Designs
-SMB (DO-214AA) Package
Ion-Implanted Breakdown Region
-Precise and Stable Voltage
-Low Voltage Overshoot Under Surge
The TISP4xxxJ1BJ is a symmetrical voltage-triggered bidirectional thyristor device which has been designed as the tail (ground return) element
of a Y circuit configured protector. As such, the TISP4xxxJ1BJ must be rated to conduct the sum of the TIP and RING currents. For example,
the normal GR-1089-CORE testing can impose 200 A, 10/1000 and 1000 A, 2/10 on the ground return element of the Y configuration. Using
the TISP4xxxJ1BJ together with two TISP4xxxH3BJ parts gives a 2x 100 A, 10/1000 Y protector circuit. For ITU-T applications, using the
TISP4xxxJ1BJ with a TISP3xxxT3BJ gives a coordinated Y protector with a 2x 120 A, 5/310 capability. Design tables are given in the
Applications Information section. These SMB package combinations are often more space efficient than single package Y protection
multi-chip integrations.
These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, V
DRM
, see Figure 1. Voltages above V
DRM
are
limited and will not exceed the breakover voltage, V
(BO)
, level. If sufficient current flows due to the overvoltage, the device switches into a low-
voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted current falls below the
holding current, I
H
, level the devices switches off and restores normal system operation.
How to Order
Device Symbol
SMB Package (Top View)
Device
V
DRM
V
V
(BO)
V
TISP4070J1
58
70
TISP4080J1
65
80
TISP4095J1
75
95
TISP4115J1
90
115
TISP4125J1
100
125
TISP4145J1
120
145
TISP4165J1
135
165
TISP4180J1
145
180
TISP4200J1
155
200
TISP4219J1
180
219
TISP4250J1
190
250
TISP4290J1
220
290
TISP4350J1
275
350
TISP4395J1
320
395
1
2 MT2
MT1
MD4JAA
MT2
MT1
SD4JAA
Rated for International Surge Wave Shapes
Wave Shape
Standard
I
PPSM
A
2/10
GR-1089-CORE
1000
8/20
IEC 61000-4-5
800
10/160
TIA/EIA-IS-968 (FCC Part 68)
400
10/700
ITU-T K.20/21/45
350
10/560
TIA/EIA-IS-968 (FCC Part 68)
250
10/1000
GR-1089-CORE
200
Device
Package
Carrier
Order As
TISP4xxxJ1BJ
BJ (SMB/DO-214AA J-Bend)
R (Embossed Tape Reeled)
TISP4xxxJ1BJR
............................................ UL Recognized Components
2
SEPTEMBER 2001 - REVISED MAY 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted)
TISP4xxxJ1BJ Overvoltage Protector Series
Recommended Operating Conditions
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage
'4070
'4080
'4095
'4115
'4125
'4145
'4165
'4180
'4200
'4219
'4250
'4290
'4350
`4395
V
DRM
58
65
75
90
100
120
135
145
155
180
190
220
275
320
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
I
PPSM
A
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
1000
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 volt age wave shape)
800
10/160 (TIA/EIA-IS-968 (Replaces FCC Part 68), 10/160 voltage wave shape)
400
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
370
5/310 (ITU-T K.20/21, 10/700 volt age wave shape, single)
350
5/320 (TIA/EIA-IS-968 (Replaces FCC Part 68), 9/720 voltage wave shape, single)
350
10/560 (TIA/EIA-IS-968 (Replaces FCC Part 68), 10/560 voltage wave shape)
250
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
200
Non-repetitive peak on-state current (see Notes 1 and 2)
I
TSM
80
100
A
50 Hz, 1 cycle
60 Hz, 1 cycle
Initial rate of rise of on-s tate current,
Linear current ramp, Maximum ramp value < 50 A
di
T
/dt
800
A/
s
Junction temperature
T
J
-40 to +150
C
Storage temperature range
T
stg
-65 to +150
C
NOTES: 1. Initially, the device must be in thermal equilibrium with T
J
= 25
C.
2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its
initial conditions.
Component
Min
Typ
Max
Unit
R1, R2
Series resistor for GR-1089-CORE first-level surge survival
Series resistor for ITU-T recommendation K. 20/K.45/K.21 (Basic coordi nation with 400 V GDT)
Series resistor for TIA/EIA-IS-968 (Replaces FCC Part 68), 9/720 survival
Series resistor for TIA/EIA-IS-968 (Replaces FCC Part 68), 10/560 survival
Series resistor for TIA/EIA-IS-968 (Replaces FCC Part 68), 10/160 survival
0
6.5
0
0
0
3
SEPTEMBER 2001 - REVISED MAY 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 C (Unless Otherwise Noted)
Parameter
Test Conditions
Min
Typ
Max
Unit
I
DRM
Repetitive peak off-
state current
V
D
=
V
DRM
T
A
= 25
C
T
A
= 85
C
5
10
A
V
(BO)
AC breakover voltage
dv/dt =
250 V/ms,
R
SOURCE
= 300
4070
'4080
'4095
'4115
'4125
'4145
'4165
'4180
'4200
'4219
'4250
'4290
'4350
`4395
70
80
95
115
125
145
165
180
200
219
250
290
350
395
V
V
(BO)
Ramp breakover
voltage
dv/dt
1000 V/
s, Linear voltage ramp,
Maximum ramp value =
500 V
di/dt =
20 A/
s, Linear current ramp,
Maximum ramp value =
10 A
4070
'4080
'4095
'4115
'4125
'4145
'4165
'4180
'4200
'4219
'4250
'4290
'4350
`4395
77
88
104
125
135
156
177
192
212
231
263
303
364
409
V
V
(BO)
Impulse breakover
voltage
2/10 wave shape, I
PP
=
1000 A, R
S
= 2.5
,
(see Note 3)
4070
'4080
'4095
'4115
'4125
'4145
'4165
'4180
'4200
'4219
'4250
'4290
'4350
`4395
96
101
112
130
140
161
183
199
221
242
276
320
386
434
V
NOTE 3: Dynamic voltage measurements should be made with an oscilloscope with limited band width (20 MHz) to avoid high frequency
noise.
4
SEPTEMBER 2001 - REVISED MAY 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 C (Unless Otherwise Noted) (Continued)
I
(BO)
Breakover current
dv/dt =
250 V/ms,
R
SOURCE
= 300
600
mA
I
H
Holding current
I
T
=
5 A, di/dt = +/-30 mA/ms
20
mA
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp, Maximum ramp value < 0.85 V
DRM
5
kV/
s
I
D
Off-state current
V
D
=
50 V
T
A
= 85
C
10
A
C
off
Off-state capacitance
f = 1 MHz,
Vd = 1 V rms, V
D
= 0,
`4070 thru `4115
`4125 thru `4219
`4250 thru `4395
195
120
105
235
145
125
pF
f = 1 MHz,
Vd = 1 V rms, V
D
= -1 V
`4070 thru `4115
`4125 thru `4219
`4250 thru `4395
180
110
95
215
132
115
f = 1 MHz,
Vd = 1 V rms, V
D
= -2 V
`4070 thru `4115
`4125 thru `4219
`4250 thru `4395
165
100
90
200
120
105
f = 1 MHz,
Vd = 1 V rms, V
D
= -50 V
`4070 thru `4115
`4125 thru `4219
`4250 thru `4395
85
50
42
100
60
50
f = 1 MHz,
Vd = 1 V rms, V
D
= -100 V
(see Note 4)
`4125 thru `4219
`4250 thru `4395
40
35
50
40
NOTE 4: To avoid possible voltage clipping, the `4125 is tested with V
D
= -98 V
Parameter
Test Conditions
Min
Typ
Max
Unit
Thermal Characteristics
Parameter
Test Condit ions
Min
Typ
Max
Unit
R
JA
Junction to free air thermal resistance
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
,
T
A
= 25
C, (see Note 5)
90
C/W
NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
5
SEPTEMBER 2001 - REVISED MAY 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Parameter Measurement Information
Figure 1. Voltage-Current Characteristic for Terminals 1-2
All Measurements are Referenced to Terminal 2
-v
V
DRM
I
DRM
V
D
I
H
I
TSM
I
PPSM
V
(BO)
I
D
Quadrant I
Switching
Characteristic
+v
+i
V
(BO)
V
D
I
D
I
H
I
TSM
I
PPSM
-i
Quadrant III
Switching
Characteristic
PM4XAF
V
DRM
I
DRM
I
(BO)
I
(BO)
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