Specifications are subject to change without notice.
155
NOVEMBER 1997 - REVISED DECEMBER 2001
TISP4xxxM3BJ Overvoltage Protector Series
TISP4070M3BJ THRU TISP4115M3BJ,
TISP4125M3BJ THRU TISP4220M3BJ,
TISP4240M3BJ THRU TISP4400M3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4xxxM3BJ Overview
This TISP
device series protects central office, access and customer premise equipment against overvoltages on the telecom line. The
TISP4xxxM3BJ is available in a wide range of voltages and has a medium current capability. These protectors have been specified mindful of
the following standards and recommendations: GR-1089-CORE, FCC Part 68, UL1950, EN 60950, IEC 60950, ITU-T K.20, K.21 and K.45. The
TISP4350M3BJ meets the FCC Part 68 "B" ringer voltage requirement (VDRM = 275 V) and survives the Type B impulse tests. For FCC Part
68 ADSL applications, the TISP4360H3BJ is recommended. The TISP4360H3BJ has an extra 15 V in working level (VDRM = 290 V) to avoid
clipping the ADSL signal during ringing peaks. The TISP4xxxM3BJ series is housed in a surface mount SMB (DO-214AA) package.
Part #
V
DRM
V
V
(BO)
V
V
T
@ I
T
V
I
DRM
A
I
(BO)
mA
I
T
A
I
H
mA
C
o
@ -2 V
pF
Functionally
Replaces
TISP4070M3
58
70
3
5
600
5
150
72
P0640SA
TISP4080M3
65
80
3
5
600
5
150
72
P0720SA
TISP4095M3
75
95
3
5
600
5
150
72
P0900SA
TISP4115M3
90
115
3
5
600
5
150
72
P1100SA
TISP4125M3
100
125
3
5
600
5
150
52
TISP4145M3
120
145
3
5
600
5
150
52
P1300SA
TISP4165M3
135
165
3
5
600
5
150
52
TISP4180M3
145
180
3
5
600
5
150
52
P1500SA
TISP4200M3
155
200
3
5
600
5
150
52
TISP4220M3
160
220
3
5
600
5
150
52
P1800SA
TISP4240M3
180
240
3
5
600
5
150
42
TISP4250M3
190
250
3
5
600
5
150
42
P2300SA
TISP4265M3
200
265
3
5
600
5
150
42
TISP4290M3
220
290
3
5
600
5
150
42
P2600SA
TISP4300M3
230
300
3
5
600
5
150
42
TISP4350M3
275
350
3
5
600
5
150
42
P3100SA
TISP4360M3
290
360
3
5
600
5
150
42
TISP4395M3
320
395
3
5
600
5
150
42
P3500SA
TISP4400M3
300
400
3
5
600
5
150
42
Bourns part has an improved protection voltage
Summary Electrical Characteristics
Summary Current Ratings
Parameter
I
TSP
A
I
TSM
A
di/dt
A/
s
Waveshape
2/10
1.2/50, 8/20
10/160
5/320
10/560
10/1000
1 cycle 60 Hz
2/10 Wavefront
Value
300
220
120
100
75
50
32
300
Specifications are subject to change without notice.
156
NOVEMBER 1997 - REVISED DECEMBER 2001
Device Symbol
ITU-T K.20/21/44/45 rating ............... 4 kV 10/700, 100 A 5/310
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
SMBJ Package (Top View)
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the
diverted current subsides.
TISP4xxxM3BJ Overvoltage Protector Series
Device
V
DRM
V
V
(BO)
V
`4070
58
70
`4080
65
80
`4095
75
95
`4115
90
115
`4125
100
125
`4145
120
145
`4165
135
165
`4180
145
180
`4200
155
200
`4220
160
220
`4240
180
240
`4250
190
250
`4265
200
265
`4290
220
290
`4300
230
300
`4350
275
350
`4360
290
360
`4395
320
395
`4400
300
400
Low Differential Capacitance ................................. 39 pF max.
............................................ UL Recognized Component
How To Order
Device
Package
Carrier
Order As
TISP 4xxxM3BJ BJ (J-Bend DO-214AA/SMB)
Embossed Tape Reeled TISP4xxxM3BJR
Bulk Pack
TISP 4xxxM3BJ
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115, etc.
1
2
T( A)
R(B)
MDXXBGE
T
R
SD4XAA
T
erminals T and R correspond to the
alternative line designators of A and B
Rated for International Surge Wave Shapes
Wave Shape
Standard
I
TSP
A
2/10
s
GR-1089-CORE
300
8/20
s
IEC 61000-4-5
220
10/160
s
FCC Part 68
120
10/700
s
ITU-T K.20/21/45
100
10/560
s
FCC Part 68
75
10/1000
s
GR-1089-CORE
50
Specifications are subject to change without notice.
157
NOVEMBER 1997 - REVISED DECEMBER 2001
The TISP4xxxM3BJ range consists of nineteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These medium (M) current protection
devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed tape reel pack. For alternative
voltage and holding current values, consult the factory. For higher rated impulse currents in the SMB package, the 100 A 10/1000
TISP4xxxH3BJ series is available.
TISP4xxxM3BJ Overvoltage Protector Series
Description (continued)
Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted)
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, (see Note 1)
`4070
`4080
`4095
`4115
`4125
`4145
`4165
`4180
`4200
`4220
`4240
`4250
`4265
`4290
`4300
`4350
`4360
`4395
`4400
V
DRM
58
65
75
90
100
120
135
145
155
160
180
190
200
220
230
275
290
320
300
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
I
TSP
A
2/10
s (GR-1089-CORE, 2/10 s voltage wave shape)
300
8/20
s (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current)
220
10/160
s (FCC Part 68, 10/160 s voltage wave shape)
120
5/200
s (VDE 0433, 10/700 s voltage wave shape)
110
0.2/310
s (I3124, 0.5/700 s voltage wave shape)
100
5/310
s (ITU-T K.20/21/45, K.44 10/700 s voltage wave shape)
100
5/310
s (FTZ R12, 10/700 s voltage wave shape)
100
10/560
s (FCC Part 68, 10/560 s voltage wave shape)
75
10/1000
s (GR-1089-CORE, 10/1000 s voltage wave shape)
50
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
I
TSM
30
32
2.1
A
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current,
Exponential current ramp, Maximum ramp value < 100 A
di
T
/dt
300
A/
s
Junction temperature
T
J
-40 to +150
C
Storage temperature range
T
stg
-65 to +150
C
NOTES: 1. See Applications Information and Figure 11 for voltage values at lower temperatures.
2. Initially, the TISP4xxxM3BJ must be in thermal equilibrium with T
J
= 25
C.
3. The surge may be repeated after the TISP4xxxM3BJ returns to its initial conditions.
4. See Applications Information and Figure 12 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 9 for the current ratings at other durations. Derate current values at -0.61 %/
C for ambient temperatures
above 25
C.
Specifications are subject to change without notice.
158
NOVEMBER 1997 - REVISED DECEMBER 2001
TISP4xxxM3BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 C (Unless Otherwise Noted)
Parameter
Test Conditions
Min
Typ
Max
Unit
I
DRM
Repetitive peak off-
state current
V
D
= V
DRM
T
A
= 25
C
T
A
= 85
C
5
10
A
V
(BO)
Breakover voltage
dv/dt =
250 V/ms, R
SOURCE
= 300
`4070
`4080
`4095
`4115
`4125
`4145
`4165
`4180
`4200
`4220
`4240
`4250
`4265
`4290
`4300
`4350
`4360
`4395
`4400
70
80
95
115
125
145
165
180
200
220
240
250
265
290
300
350
360
395
400
V
V
(BO)
Impulse breakover
voltage
dv/dt
1000 V/s, Linear voltage ramp,
Maximum ramp value =
500 V
di/dt =
20 A/s, Linear current ramp,
Maximum ramp value =
10 A
`4070
`4080
`4095
`4115
`4125
`4145
`4165
`4180
`4200
`4220
`4240
`4250
`4265
`4290
`4300
`4350
`4360
`4395
`4400
78
88
102
122
132
151
171
186
207
227
247
257
272
298
308
359
370
405
410
V
I
(BO)
Breakover current
dv/dt =
250 V/ms, R
SOURCE
= 300
0.15
0.6
A
A
V
T
On-state voltage
I
T
=
5 A, t
W
= 100
s
3
V
I
H
Holding current
I
T
=
5 A, di/dt = +/-30 mA/ms
0.15
0.35
A
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
5
kV/
s
I
D
Off-state current
V
D
=
50 V
T
A
= 85
C
10
Specifications are subject to change without notice.
159
NOVEMBER 1997 - REVISED DECEMBER 2001
Thermal Characteristics
TISP4xxxM3BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 C (Unless Otherwise Noted)
C
off
Off-state capacitance
f = 1 MHz,
V
d
= 1 V rms, V
D
= 0,
f = 1 MHz,
V
d
= 1 V rms, V
D
= -1 V
f = 1 MHz,
V
d
= 1 V rms, V
D
= -2 V
f = 1 MHz,
V
d
= 1 V rms, V
D
= -50 V
f = 1 MHz,
V
d
= 1 V rms, V
D
= -100 V
(see Note 6)
4070 thru `4115
`4125 thru `4220
`4240 thru `4400
`4070 thru `4115
`4125 thru `4220
`4240 thru `4400
`4070 thru `4115
`4125 thru `4220
`4240 thru `4400
`4070 thru `4115
`4125 thru `4220
`4240 thru `4400
`4125 thru `4220
`4240 thru `4400
83
62
50
78
56
45
72
52
42
36
26
19
21
15
100
74
60
94
67
54
87
62
50
44
31
22
25
18
pF
NOTE
6: To avoid possible voltage clipping, the `4125 is tested with V
D
= -98 V.
Parameter
Test Conditions
Min
Typ
Max
Unit
Parameter
Test Conditions
Min
Typ
Max
Unit
R
JA
Junction to free air thermal resistance
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
,
T
A
= 25
C, (see Note 7)
115
C/W
265 mm x 210 mm populated line card,
4-layer PCB, I
T
= I
TSM(1000)
, T
A
= 25
C
52
NOTE
7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
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