Specifications are subject to change without notice.
213
NOVEMBER 1997 - REVISED OCTOBER 2000
Parameter
I
TSP
A
I
TSM
A
di/dt
A/
s
Waveshape
2/10
1.2/50, 8/20
10/160
5/320
10/560
10/1000
1 cycle 60 Hz
2/10 Wavefront
Value
500
300
250
200
160
100
60
400
TISP4xxxH3BJ Overvoltage Protector Series
TISP4070H3BJ THRU TISP4115H3BJ,
TISP4125H3BJ THRU TISP4220H3BJ,
TISP4240H3BJ THRU TISP4400H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Summary Current Ratings
Summary Electrical Characteristics
Part #
V
DRM
V
V
(BO)
V
V
T
@ I
T
V
I
DRM
A
I
(BO)
mA
I
T
A
I
H
mA
C
o
@ -2 V
pF
Functionally
Replaces
TISP4070H3
58
70
3
5
600
5
150
120
P0640SC
TISP4080H3
65
80
3
5
600
5
150
120
P0720SC
TISP4095H3
75
95
3
5
600
5
150
120
P0900SC
TISP4115H3
90
115
3
5
600
5
150
120
P1100SC
TISP4125H3
100
125
3
5
600
5
150
65
TISP4145H3
120
145
3
5
600
5
150
65
P1300SC
TISP4165H3
135
165
3
5
600
5
150
65
TISP4180H3
145
180
3
5
600
5
150
65
P1500SC
TISP4200H3
155
200
3
5
600
5
150
65
TISP4220H3
160
220
3
5
600
5
150
65
P1800SC
TISP4240H3
180
240
3
5
600
5
150
55
TISP4250H3
190
250
3
5
600
5
150
55
P2300SC
TISP4265H3
200
265
3
5
600
5
150
55
TISP4290H3
220
290
3
5
600
5
150
55
P2600SC
TISP4300H3
230
300
3
5
600
5
150
55
TISP4350H3
275
350
3
5
600
5
150
55
P3100SC
TISP4395H3
320
395
3
5
600
5
150
55
P3500SC
TISP4400H3
300
400
3
5
600
5
150
55
Bourns part has an improved protection voltage
This TISP device series protects central office, access and customer premise equipment against overvoltages on the telecom line. The
TISP4xxxH3BJ is available in a wide range of voltages and has a high current capability, allowing minimal series resistance to be used. These
protectors have been specified mindful of the following standards and recommendations: GR-1089-CORE, FCC Part 68, UL1950, EN 60950,
IEC 60950, ITU-T K.20, K.21 and K.45. The TISP4350H3BJ meets the FCC Part 68 "B" ringer voltage requirement and survives the Type A and
B impulse tests. These devices are housed in a surface mount SMB (DO-214AA) package.
TISP4xxxH3BJ Overview
Specifications are subject to change without notice.
214
NOVEMBER 1997 - REVISED OCTOBER 2000
T
R
SD4XAA
Terminals T and R correspond to the
alternative line designators of A and B
Device Symbol
Device
V
DRM
V
V
(BO)
V
`4070
58
70
`4080
65
80
`4095
75
95
`4115
90
115
`4125
100
125
`4145
120
145
`4165
135
165
`4180
145
180
`4200
155
200
`4220
160
220
`4240
180
240
`4250
190
250
`4265
200
265
`4290
220
290
`4300
230
300
`4350
275
350
`4395
320
395
`4400
300
400
Low Differential Capacitance ...................................67 pF max.
1
2
T(A)
R(B)
MDXXBG
How To Order
Device
Package
Carrier
Order As
TISP4xxxH3BJ
BJ (J-Bend DO-214AA/SMB)
Embossed Tape Reeled
TISP4xxxH3BJR
Bulk Pack
TISP4xxxH3BJ
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115 etc.
SMBJ Package (Top View)
Description
ITU-T K.20/21 Rating . . . . . . . . . . . . . 8 kV 10/700, 200 A 5/310
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Rated for International Surge Wave Shapes
TISP4xxxH3BJ Overvoltage Protector Series
Waveshape
Standard
I
TSP
A
2/10
s
GR-1089-CORE
500
8/20
s
IEC 61000-4-5
300
10/160
s
FCC Part 68
250
10/700
s
ITU-T K.20/21
200
10/560
s
FCC Part 68
160
10/1000
s
GR-1089-CORE
100
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the
diverted current subsides.
This TISP4xxxH3BJ range consists of eighteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices
are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack. For alternative voltage and
holding current values, consult the factory. For lower rated impulse currents in the SMB package, the 50 A 10/1000 TISP4xxxM3BJ series is
available.
............................................... UL Recognized Component
Specifications are subject to change without notice.
215
NOVEMBER 1997 - REVISED OCTOBER 2000
TISP4xxxH3BJ Overvoltage Protector Series
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, (see Note 1)
`4070
`4080
`4095
`4115
`4125
`4145
`4165
`4180
`4200
`4220
`4240
`4250
`4265
`4290
`4300
`4350
`4395
`4400
V
DRM
58
65
75
90
100
120
135
145
155
160
180
190
200
220
230
275
320
300
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
I
TSP
A
2/10
s (GR-1089-CORE, 2/10 s voltage wave shape)
500
8/20
s (IEC 61000-4-5, 1.2/50 s voltage, 8/20 current combination wave generator)
300
10/160
s (FCC Part 68, 10/160 s voltage wave shape)
250
5/200
s (VDE 0433, 10/700 s voltage wave shape)
220
0.2/310
s (I3124, 0.5/700 s voltage wave shape)
200
5/310
s (ITU-T K.20/21, 10/700 s voltage wave shape)
200
5/310
s (FTZ R12, 10/700 s voltage wave shape)
200
10/560
s (FCC Part 68, 10/560 s voltage wave shape)
160
10/1000
s (GR-1089-CORE, 10/1000 s voltage wave shape)
100
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
I
TSM
55
60
2.1
A
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current,
Exponential current ramp, Maximum ramp value < 200 A
di
T
/dt
400
A/
s
Junction temperature
T
J
-40 to +150
C
Storage temperature range
T
stg
-65 to +150
C
NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.
2. Initially, the TISP4xxxH3BJ must be in thermal equilibrium with T
J
= 25
C.
3. The surge may be repeated after the TISP4xxxH3BJ returns to its initial conditions.
4. See Applications Information and Figure 11 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/
C for ambient
temperatures above 25
C.
Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted)
Specifications are subject to change without notice.
216
NOVEMBER 1997 - REVISED OCTOBER 2000
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
DRM
Repetitive peak off-
state current
V
D
= V
DRM
T
A
= 25
C
T
A
= 85
C
5
10
A
V
(BO)
Breakover voltage
dv/dt =
750 V/ms, R
SOURCE
= 300
`4070
`4080
`4095
`4115
`4125
`4145
`4165
`4180
`4200
`4220
`4240
`4250
`4265
`4290
`4300
`4350
`4395
`4400
70
80
95
115
125
145
165
180
200
220
240
250
265
290
300
350
395
400
V
V
(BO)
Impulse breakover
voltage
dv/dt
1000 V/s, Linear voltage ramp,
Maximum ramp value =
500 V
di/dt =
20 A/s, Linear current ramp,
Maximum ramp value =
10 A
`4070
`4080
`4095
`4115
`4125
`4145
`4165
`4180
`4200
`4220
`4240
`4250
`4265
`4290
`4300
`4350
`4395
`4400
78
88
103
124
134
154
174
189
210
230
250
261
276
301
311
362
408
413
V
I
(BO)
Breakover current
dv/dt =
750 V/ms, R
SOURCE
= 300
0.15
0.6
A
V
T
On-state voltage
I
T
=
5 A, t
W
= 100
s
3
V
I
H
Holding current
I
T
=
5 A, di/dt = - /+30 mA/ms
0.15
0.6
A
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
5
kV/
s
I
D
Off-state current
V
D
=
50 V
T
A
= 85
C
10
A
Electrical Characteristics, TA = 25 C (Unless Otherwise Noted)
TISP4xxxH3BJ Overvoltage Protector Series
Specifications are subject to change without notice.
217
NOVEMBER 1997 - REVISED OCTOBER 2000
Electrical Characteristics, TA = 25 C (Unless Otherwise Noted) (continued)
TISP4xxxH3BJ Overvoltage Protector Series
C
off
Off-state capacitance
f = 100 kHz,
V
d
= 1 V rms, V
D
= 0,
f = 100 kHz,
V
d
= 1 V rms, V
D
= -1 V
f = 100 kHz,
V
d
= 1 V rms, V
D
= -2 V
f = 100 kHz,
V
d
= 1 V rms, V
D
= -50 V
f = 100 kHz,
V
d
= 1 V rms, V
D
= -100 V
(see Note 6)
`4070 thru `4115
`4125 thru `4220
`4240 thru `4400
`4070 thru `4115
`4125 thru `4220
`4240 thru `4400
`4070 thru `4115
`4125 thru `4220
`4240 thru `4400
`4070 thru `4115
`4125 thru `4220
`4240 thru `4400
`4125 thru `4220
`4240 thru `4400
145
80
70
130
71
60
120
65
55
62
30
24
28
22
170
90
84
150
79
67
140
74
62
73
35
28
33
26
pF
NOTE
6: To avoid possible voltage clipping, the `4125 is tested with V
D
= -98 V.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
R
JA
Junction to free air thermal resistance
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
,
T
A
= 25
C, (see Note 7)
113
C/W
265 mm x 210 mm populated line card,
4-layer PCB, I
T
= I
TSM(1000)
, T
A
= 25
C
50
NOTE
7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
Thermal Characteristics
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