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Электронный компонент: PRF137

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polyfet rf devices
PRF137
13
Single Ended
AA
40.0
8.0
66.0
1.95 C/W
65
1.6
11.00
2.0
60
0.70
8.00
4.0
80
0.20
70
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Common Source Power Gain
Drain Efficiency
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Source
Voltage
Gate to
Source
Voltage
-65 C to 150 C
200 C
A
V
Load Mismatch Tolerance
VSWR
Drain to
Gate
Voltage
20:1
Relative
0.40
100
Ids =
mA, Vgs = 0V
V, Vgs = 0V
Ciss
Crss
Coss
Idq =
A, Vds = V, F =
0.40
Bvdss
Idss
Drain Breakdown Voltage
V
mA
pF
pF
pF
Common Source Output Capacitance
Common Source Feedback Capacitance
Idq =
Idq = 0.40
150
Vgs = 20V, Ids =
Rdson
Saturation Resistance
Forward Transconductance
gM
Vds = 10V, Vgs = 5V
POLYFET RF DEVICES
150
150
Common Source Input Capacitance
70
30V
Igss
Vgs
Idsat
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Saturation Current
1
7
uA
V
Mho
Ohm
Amp
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
RF CHARACTERISTICS ( WATTS OUTPUT )
30.0
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Gps
28.0
A, Vds = V, F =
A, Vds = V, F =
28.0
28.0
Watts
V
1
MHz
MHz
MHz
Watts
Package Style
30.0
Vds = 0V Vgs = 30V
Vgs = 20V, Vds = 10V
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
General Description
Vds =
A, Vgs = Vds
Ids =
A
C
SILICON GATE ENHANCEMENT MODE
PATENTED GOLD METALIZED
dB
%
o
o
o
o
o
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadbad
performance
TM
t
RF POWER
TRANSISTOR
VDMOS
Vds =
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
Vgs = 0V, F = 1 MHz
28.0
REVISION 08/01/1997
Vds =
Vgs = 0V, F = 1 MHz
28.0
Vds =
Vgs = 0V, F = 1 MHz
28.0
28.00