2004 Fairchild Semiconductor Corporation
April 2004
RMPA0959 Rev. B
RMPA0959
RMPA0959
CDMA and CDMA2000-1X Power Amplifier Module
General Description
The RMPA0959 power amplifier module (PAM) is designed
for cellular band AMPS, CDMA and CDMA2000-1X
applications. The 2 stage PAM is internally matched to 50
to minimize the use of external components and features a
low-power mode to reduce standby current and DC power
consumption during peak phone usage. High power-added
efficiency and excellent linearity are achieved using our
Heterojunction Bipolar Transistor (HBT) process.
Features
Single positive-supply operation with low power and
shutdown modes
38% CDMA efficiency at +28dBm average output power
53% AMPS mode efficiency at +31dBm output power
Compact LCC package ( 4.0 X 4.0 x 1.5 mm)
Internally matched to 50
and DC blocked RF input/
output
Meets CDMA2000-1XRTT performance requirements
Functional Block Diagram
COLLECTOR
BIAS 1
INPUT
STAGE
MMIC
INPUT STAGE
BIAS
OUTPUT STAGE
BIAS
BIAS CONTROL
COLLECTOR
BIAS 2
OUTPUT
STAGE
INPUT
MATCHING
NETWORK
OUTPUT
MATCHING
NETWORK
INTERSTAGE
MATCH
Vcc1
(5)
RF IN
(4)
Vref
(1)
GND
(3, 7, 9,10,11)
RF OUT
(8)
Vmode (2)
VCC=3.4V (nom)
VREF=2.85V (nom)
824-849 MHz
50
I/O
Vcc2
(6)
PA MODULE
Device
2004 Fairchild Semiconductor Corporation
RMPA0959 Rev. B
RMPA0959
Absolute Ratings
1
Notes:
1:
No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics
1
Notes:
1. All parameters met at Tc = +25C, Vcc = +3.4V, Vref = 2.85V and load VSWR
1.2:1, unless otherwise noted.
2. All phase angles.
3. Guaranteed by design.
Symbol
Parameter
Ratings
Units
Vcc1, Vcc2
Supply Voltages
5.0
V
Vref
Reference Voltage
2.6 to 3.5
V
Vmode Power
Control
Voltage
3.5
V
Pin
RF Input Power
+10
dBm
Tstg
Storage Temperature
-55 to +150
C
Symbol Parameter
Min Typ Max Units
Comments
f Operating
Frequency
824
849
MHz
CDMA Operation
SSg
Small-Signal Gain
25
28
dB
Po = 0 dBm
Gp
Power Gain
28
30
dB
Po = +28 dBm; Vmode = 0V
29
dB
Po = +16 dBm; Vmode
2.0V
Po
Linear Output Power
28
dBm
Vmode = 0V
16 dBm
Vmode
2.0V
PAEd
PAE (digital) @ +28 dBm
38
%
Vmode = 0V
PAE (digital) @ +16 dBm
8.5
%
Vmode
2.0V
PAEd (digital) @ +16 dBm
20
%
Vmode
2.0V, Vcc = 1.4 V
Itot
High Power Total Current
490
mA
Po = +28 dBm, Vmode = 0V
Low Power Total Current
130
mA
Po = +16 dBm, Vmode = 2.0V
Adjacent Channel Power Ratio
IS-95 A/B Modulation
ACPR1 885 KHz Offset
-50
dBc
Po = +28 dBm; Vmode = 0V
-52
dBc
Po = +16 dBm; Vmode
2.0V
ACPR2 1.98 MHz Offset
-62
dBc
Po = +28 dBm; Vmode = 0V
-70
dBc
Po = +16 dBm; Vmode
2.0V
AMPS Operation
Gp
Power Gain
27
31
Po = +31 dBm
PAEa
Power-Added Efficiency (analog)
53
%
Po = +31 dBm
General Characteristics
VSWR Input
Impedance
2.0:1 2.5:1
NF Noise
Figure
4
dB
Rx No
Receive Band Noise Power
-134
dBm/Hz Po
+28 dBm; 869 to 894 MHz
2fo-5fo Harmonic
Suppression
3
-30 dBc
Po
+28 dBm
S Spurious
Outputs
2,3
-60 dBc
Load
VSWR
5.0:1
Ruggedness w/ Load Mismatch
3
10:1
No permanent damage.
Tc Case
Operating
Temperature
-30
85 C
DC Characteristics
Iccq Quiescent
Current
55
mA Vmode
2.0V
Iref Reference
Current
5 8 mA Po
+28 dBm
Icc(off)
Shutdown Leakage Current
1
5
uA
No applied RF signal.
2004 Fairchild Semiconductor Corporation
RMPA0959 Rev. B
RMPA0959
Recommended Operating Conditions
Symbol Parameter
Min
Typical
Max
Units
f Operating
Frequency
824
849
MHz
Vcc1, Vcc2 Supply Voltage
3.0
3.4
4.2
V
Vref Reference
Voltage (operating)
(shutdown)
2.7
0
2.85 3.1
0.5
V
V
Vmode
Bias Control Voltage
(low-power)
(high-power)
1.8
0
2.0 3.0
0.5
V
V
Pout
Linear Output Power
(high-power)
(low-power)
+28
+16
dBm
dBm
Tc Case
Operating
Temperature
-30
+85
C
2004 Fairchild Semiconductor Corporation
RMPA0959 Rev. B
RMPA0959
Typical Characteristics
RMPA0959
Vcc = 3.4, Vref = 2.85, 28dBm Pout
RMPA0959
Vcc = 3.4, Vref = 2.85, 28dBm Pout
RMPA0959
Vcc = 3.4, Vref = 2.85, 28dBm Pout
RMPA0959
Vcc = 3.4, Vref = 2.85, 28dBm Pout
RMPA0959
Vcc = 3.4, Vref = 2.85V, 31dBm Pout AMPS Mode
RMPA0959 Cellular 4x4 PAM
Pout = 16dBm, Vref = 2.85V, Vcc = 3.4V, Vmode = 2.0V
RMPA0959 Cellular 4x4 PAM
Pout = 16dBm, Vref = 2.85V, Vcc = 3.4V, Vmode = 2.0V
RMPA0959 Cellular 4x4 PAM
Pout = 16dBm, Vref = 2.85V, TC = 25
C, Vmode = 2.0V
30.0
30.5
31.0
31.5
32.0
32.5
33.0
33.5
34.0
819
824
829
834
839
844
849
854
Frequency (MHz)
819
824
829
834
839
844
849
854
Frequency (MHz)
819
824
829
834
839
844
849
854
Frequency (MHz)
824
836.5
849
Frequency (MHz)
824
836.5
849
Frequency (MHz)
824
836.5
849
Frequency (MHz)
819
824
829
834
839
844
849
854
Frequency (MHz)
819
824
829
834
839
844
849
854
Frequency (MHz)
Gain (dB)
Gain (dB)
34.0
35.0
36.0
37.0
38.0
39.0
40.0
41.0
42.0
PAE (%)
PAE (%)
PAE (%)
-58.00
-56.00
-54.00
-52.00
-50.00
-48.00
-46.00
ACPR1 (dBc)
ACPR2 (dBc)
-68.00
-66.00
-64.00
-62.00
-60.00
-58.00
-56.00
49.0
50.0
51.0
52.0
53.0
54.0
55.0
56.0
57.0
22.0
24.0
26.0
28.0
30.0
32.0
7.0
8.0
9.0
10.0
11.0
12.0
-60.0
-58.0
-56.0
-54.0
-52.0
-50.0
-48.0
-46.0
-44.0
-42.0
-40.0
ACPR1 (dBc)
2004 Fairchild Semiconductor Corporation
RMPA0959 Rev. B
RMPA0959
Typical Characteristics
(Continued)
Efficiency Improvement Applications
In addition to high-power/low-power bias modes, the
efficiency of the PA module can be significantly increased
at backed-off RF power levels by dynamically varying the
supply voltage (Vcc) applied to the amplifier. Since mobile
handsets and power amplifiers frequently operate at 10-20
dB back-off, or more, from maximum rated linear power,
battery life is highly dependent on the DC power consumed
at antenna power levels in the range of 0 to +16dBm. The
reduced demand on transmitted RF power allows the PA
supply voltage to be reduced for improved efficiency, while
still meeting linearity requirements for CDMA modulation
with excellent margin. High-efficiency DC-DC converters
are now available to implement switched-voltage operation.
The following charts show measured performance of the
PA module in low-power mode (Vmode = +2.0V) at
+16dBm output power and over a range of supply voltages
from 3.4V nominal down to 1.2V. Power-added efficiency
is more than doubled from 9.5 percent to nearly 25 percent
(Vcc = 1.2V) while maintaining a typical ACPR1 of 52dBc
and ACPR2 of less than 61dBc.
Operation at even lower levels of Vcc supply voltage are
possible with a further restriction on the maximum RF
output power. The PA module can be biased at a supply
voltage of as low as 0.7V with an efficiency as high as 10-
12 percent at +8dBm output power. Excellent signal
linearity is still maintained even under this low supply
voltage condition.
RMPA0959 Cellular 4x4 PAM
Pout = 16dBm, Vref = 2.85V, TC = 25
C, Vmode = 2.0V
RMPA0959 Cellular 4x4 PAM
Frequency = 836.5MHz, Vcc = 3.4V, Vref = 2.85V
-74.0
-72.0
-70.0
-68.0
-66.0
-64.0
-62.0
-60.0
-58.0
-56.0
-54.0
824
836.5
849
Frequency (MHz)
Pout (dBm)
ACPR2 (dBc)
0
50
100
150
200
250
300
350
400
450
500
0.0
4.0
8.0
12.0
16.0
20.0
24.0
28.0
Icc total (mA)
Vmode = 0V
Vmode = 2.0V
RMPA0959
Vref = 2.85V, Pout = 16dBm, Vmode = 2.0V
-56.0
-54.0
-52.0
-50.0
-48.0
-46.0
-44.0
-42.0
-40.0
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6
Vcc (V)
ACP
R1
(
d
Bc
)
RMPA0959
Vref = 2.85V, Pout = 16dBm, Vmode = 2.0V
-80.0
-75.0
-70.0
-65.0
-60.0
-55.0
-50.0
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6
Vcc (V)
ACP
R
2
(
d
Bc
)
RMPA0959
Vref = 2.85V, Pout = 16dBm, Vmode = 2.0V
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6
Vcc (V)
PA
E (
%
)
RMPA0959
Vref = 2.85V, Pout = 16dBm, Vmode = 2.0V
20.0
22.0
24.0
26.0
28.0
30.0
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6
Vcc (V)
Ga
in
(
d
B)
2004 Fairchild Semiconductor Corporation
RMPA0959 Rev. B
RMPA0959
Efficiency Improvement Applications
(continued)
RMPA0959
Vref = 2.85V, Pout = 12dBm, Vmode = 2.0V
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6
Vcc (V)
PA
E (
%
)
RMPA0959
Vref = 2.85V, Pout = 12dBm, Vmode = 2.0V
20.0
22.0
24.0
26.0
28.0
30.0
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6
Vcc (V)
Gai
n
(d
B
)
RMPA0959
Vref = 2.85V, Pout = 12dBm, Vmode = 2.0V
-56.0
-54.0
-52.0
-50.0
-48.0
-46.0
-44.0
-42.0
-40.0
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6
Vcc (V)
AC
P
R
1
(
d
B
c
)
RMPA0959
Vref = 2.85V, Pout = 12dBm, Vmode = 2.0V
-82.0
-77.0
-72.0
-67.0
-62.0
-57.0
-52.0
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6
Vcc (V)
AC
P
R
2
(
d
B
c
)
RMPA0959
Vref = 2.85V, Pout = 8dBm, Vmode = 2.0V
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6
Vcc (V)
PA
E
(
%
)
RMPA0959
Vref = 2.85V, Pout = 8dBm, Vmode = 2.0V
20.0
22.0
24.0
26.0
28.0
30.0
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6
Vcc (V)
Gai
n
(d
B
)
RMPA0959
Vref = 2.85V, Pout = 8dBm, Vmode = 2.0V
-70.0
-65.0
-60.0
-55.0
-50.0
-45.0
-40.0
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6
Vcc (V)
ACP
R1
(
d
Bc
)
RMPA0959
Vref = 2.85V, Pout = 8dBm, Vmode = 2.0V
-90.0
-85.0
-80.0
-75.0
-70.0
-65.0
-60.0
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6
Vcc (V)
AC
P
R
2
(
d
B
c
)
2004 Fairchild Semiconductor Corporation
RMPA0959 Rev. B
RMPA0959
Efficiency Improvement Applications
(continued)
RMPA0959 Cellular 4x4 PAM
Pout = 16dBm, Vref = 2.85V, TC = 25C, Vmode = 2.0V
0.0
5.0
10.0
15.0
20.0
25.0
30.0
824
836.5
849
Frequency (MHz)
PA
E (
%
)
Vcc = 1.3V
Vcc = 1.5V
Vcc = 2.0V
Vcc = 3.0V
Vcc = 3.4V
RMPA0959 Cellular 4x4 PAM
Pout = 16dBm, Vref = 2.85V, TC = 25C, Vmode = 2.0V
20.0
22.0
24.0
26.0
28.0
30.0
824
8
36.5
8
49
Frequency (MHz)
Ga
i
n
(d
B
)
Vcc = 1.3V
Vcc = 1.5V
Vcc = 2.0V
Vcc = 3.0V
Vcc = 3.4V
RMPA0959 Cellular 4x4 PAM
Pout = 16dBm, Vref = 2.85V, TC = 25C, Vmode = 2.0V
-60.0
-58.0
-56.0
-54.0
-52.0
-50.0
-48.0
-46.0
-44.0
-42.0
-40.0
824
836.5
849
Frequency (MHz)
AC
P
R
1
(
d
Bc
)
Vcc = 1.3V
Vcc = 1.5V
Vcc = 2.0V
Vcc = 3.0V
Vcc = 3.4V
RMPA0959 Cellular 4x4 PAM
Pout = 16dBm, Vref = 2.85V, TC = 25C, Vmode = 2.0V
-74.0
-72.0
-70.0
-68.0
-66.0
-64.0
-62.0
-60.0
-58.0
-56.0
-54.0
824
836.5
849
Frequency (MHz)
ACP
R2
(
d
Bc
)
Vcc = 1.3V
Vcc = 1.5V
Vcc = 2.0V
Vcc = 3.0V
Vcc = 3.4V
2004 Fairchild Semiconductor Corporation
RMPA0959 Rev. B
RMPA0959
Signal Descriptions
Evaluation Board Layout
Materials and DC Turn-On Sequence
DC Turn on Sequence:
1) Vcc1 = Vcc2 = 3.4V (typical)
2) Vref = 2.85V (typical)
3) High-Power: Vmode = 0V (Pout > 16dBm)
Low-Power: Vmode = 2.0V (Pout < 16dBm)
Pin #
Symbol
Description
1
Vref
Supply Voltage to Input Stage
2
Vmode
RF Input Signal
3 GND
Ground
4
RF In
High-Power/Low-Power Mode Control
5 Vcc1
Reference
Voltage
6
Vcc2
Supply Voltage to Output Stage
7 GND
Ground
8
RF Out
RF Output Signal
9 GND
Ground
10 GND
Ground
11 GND
Paddle
Ground
Qty.
Item No.
Part Number
Decription
Vendor
1
1
G507548-1 V2
PC, BOARD
Fairchild
2
2
#142-0701-841
SMA Connector
Johnson
5
3
#234D-5211TN
Terminals
3M
Ref
4
G57583
Assembly, RMPA0959
Fairchild
2
5
GRM39X7R102K50V
1000pF Capacitor (D603)
Murata
2
5 (Alt)
ECJ-1VB1H1D2K
1000pF Capacitor (D603)
Panasonic
2
6
C3216X5R1A335M
3.3 F Capacitor (1206)
TDK
1
7
GRM39Y5V104Z16V
0.1F Capacitor (0603)
Murata
1
7 (Alt)
ECJ-1VBC104K
0.1F Capacitor (0603)
Panasonic
1
8
GRM39X7R331K50V
330pF Capacitor (0603)
Murata
A/R
9
SN83
Solder Paste
Indium Corp.
A/R
10
SN86
Solder Paste
Indium Corp.
1
4
5
3
7
6
8
2
5
6
2004 Fairchild Semiconductor Corporation
RMPA0959 Rev. B
RMPA0959
Evaluation Board Schematic
4
5
6
8
3,7,9,10
SMA1
RF IN
SMA2
RF OUT
Vcc1
Vcc2
(package
base)
50 ohm TRL
50 ohm TRL
3.3
F
1
Vref
PA0959
PPYYWW
U31XX
3.3
F
330 pF
1000 pF
1000 pF
0.1
F
2
Vmode
11
2004 Fairchild Semiconductor Corporation
RMPA0959 Rev. B
RMPA0959
Package Outline
PA0959
FRF
PPYYWW
U
PA0959
PPYYWW
U31XX
31XX
1
I/O 1 INDICATOR
TOP VIEW
FRONT VIEW
BOTTOM VIEW
DETAIL A. TYP.
(4.00mm
1.60mm MAX.
.30mm TYP.
.18mm
3.65mm
.85mm TYP.
.25mm TYP.
1.08mm
1.84mm
3.50mm TYP.
See Detail A
) SQUARE
+.100
.050
2
3
4
5
10
9
8
7
6
11
1
2
.40mm
.10mm
.10mm
.40mm
.45mm
2004 Fairchild Semiconductor Corporation
RMPA0959 Rev. B
RMPA0959
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
Precautions to Avoid Permanent Device Damage:
Cleanliness: Observe proper handling procedures to
ensure clean devices and PCBs. Devices should remain
in their original packaging until component placement to
ensure no contamination or damage to RF, DC & ground
contact areas.
Device Cleaning: Standard board cleaning techniques
should not present device problems provided that the
boards are properly dried to remove solvents or water
residues.
Static Sensitivity: Follow ESD precautions to protect
against ESD damage:
A properly grounded static-dissipative surface on
which to place devices.
Static-dissipative floor or mat.
A properly grounded conductive wrist strap for each
person to wear while handling devices.
General Handling: Handle the package on the top with a
vacuum collet or along the edges with a sharp pair of
bent tweezers. Avoiding damaging the RF, DC, & ground
contacts on the package bottom. Do not apply excessive
pressure to the top of the lid.
Device Storage: Devices are supplied in heat-sealed,
moisture-barrier bags. In this condition, devices are
protected and require no special storage conditions.
Once the sealed bag has been opened, devices should
be stored in a dry nitrogen environment.
Device Usage:
Fairchild recommends the following procedures prior to
assembly.
Dry-bake devices at 125C for 24 hours minimum. Note:
The shipping trays cannot withstand 125C baking
temperature.
Assemble the dry-baked devices within 7 days of
removal from the oven.
During the 7-day period, the devices must be stored in an
environment of less than 60% relative humidity and a
maximum temperature of 30C
If the 7-day period or the environmental conditions have
been exceeded, then the dry-bake procedure must be
repeated.
Solder Materials & Temperature Profile:
Reflow
soldering is the preferred method of SMT attachment. Hand
soldering is not recommended.
Reflow Profile
Ramp-up: During this stage the solvents are
evaporated from the solder paste. Care should be
taken to prevent rapid oxidation (or paste slump) and
solder bursts caused by violent solvent out-gassing. A
typical heating rate is 1- 2C/sec.
Pre-heat/soak: The soak temperature stage serves
two purposes; the flux is activated and the board and
devices achieve a uniform temperature. The
recommended soak condition is: 120-150 seconds at
150C.
Reflow Zone: If the temperature is too high, then
devices may be damaged by mechanical stress due to
thermal mismatch or there may be problems due to
excessive solder oxidation. Excessive time at
temperature can enhance the formation of inter-
metallic compounds at the lead/board interface and
may lead to early mechanical failure of the joint.
Reflow must occur prior to the flux being completely
driven off. The duration of peak reflow temperature
should not exceed 10 seconds. Maximum soldering
temperatures should be in the range 215-220C, with
a maximum limit of 225C.
Cooling Zone: Steep thermal gradients may give rise
to excessive thermal shock. However, rapid cooling
promotes a finer grain structure and a more crack-
resistant solder joint. The illustration below indicates
the recommended soldering profile.
Solder Joint Characteristics:
Proper operation of this device depends on a reliable void-
free attachment of the heatsink to the PWB. The solder joint
should be 95% void-free and be a consistent thickness.
Rework Considerations:
Rework of a device attached to a board is limited to reflow
of the solder with a heat gun. The device should not be
subjected to more than 225C and reflow solder in the
molten state for more than 5 seconds. No more than 2
rework operations should be performed.
2004 Fairchild Semiconductor Corporation
RMPA0959 Rev. B
RMPA0959
Figure 1. Recommended Solder Reflow Profile
0
20
40
60
80
100
120
140
DEG (
C)
TIME (SEC)
10 SEC
183
C
1
C/SEC
1
C/SEC
SOAK AT 150
C
FOR 60 SEC
45 SEC (MAX)
ABOVE 183
C
160
180
200
220
240
0
60
120
180
240
300
Rev. I10
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Advance Information
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This datasheet contains the design specifications for
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