Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised July 27, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
Description
17 dB small signal gain (typ.)
33 dBm saturated power out (typ.)
DC Bias connections on top or bottom side
Circuit contains individual source vias
Chip size 4.00 mm x 2.98 mm
Features
The Raytheon RMPA29200 is a high efficiency power amplifier designed for use in Sat-Com, point to point radio,
point to multi-point communications, LMDS and other millimeter wave applications. The RMPA29200 is a 3-stage
GaAs MMIC amplifier utilizing Raytheon's advanced 0.15
m gate length Power PHEMT process and can be used in
conjunction with other driver or power amplifiers to achieve the required total power output.
Electrical
Characteristics
(at 25 C) 50 Ohm
system, Vd=+5V,
Quiescent current
(Idq)=1500 mA
Note:
1.
Typical range of the negative gate voltage is -1.0 to 0.0V to set typical Idq of 1500 mA.
Absolute
Maximum
Ratings
Parameter
Symbol
Typical
Units
Positive DC Voltage (+5 V Typical)
Vd
+ 6
Volts
Negative DC Voltage
Vg
- 2
Volts
Simultaneous (Vd - Vg)
Vdg
+ 8
Volts
Positive DC Current
I
D
2450
mA
RF Input Power (from 50
source)
P
IN
+22
dBm
Operating Base plate Temperature
T
C
-30 to +85
C
Storage Temperature Range
T
Stg
-55 to +125
C
Thermal Resistance
R
jc
5.6
C/W
(Channel to Backside)
Parameter
Min
Typ
Max
Unit
Frequency Range
29
31
GHz
Gate Supply Voltage (Vg)
1
-0.2
V
Gain Small Signal
14.5
17
dB
(Pin=0 dBm)
Gain Variation vs. Frequency
+/-0.5
dB
Power Output
32.5
dBm
at 1 dB Compression
Power Output Saturated:
32
33
dBm
(Pin=+19 dBm)
Drain Current
1500
mA
at Pin=0 dBm
RMPA29200
29-31 GHz 2 Watt Power Amplifier MMIC
Parameter
Min
Typ
Max
Unit
Drain Current
1780
mA
at P1 dB Compression
Power Added Efficiency
20
%
(PAE): at P1dB
OIP3 (26 dBm/Tone)
38
dBm
Input Return Loss
12
dB
(Pin=0 dBm)
Output Return Loss
10
dB
(Pin=0 dBm)
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised July 27, 2001
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high
thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined,
finished flat, plated with gold over nickel and should be capable of withstanding 325C for 15 minutes.
Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen
environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC
Ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution
including the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded
to prevent static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long
corresponding to a typically 2 mils gap between the chip and the substrate material.
Application
Information
RMPA29200
29-31 GHz 2 Watt Power Amplifier MMIC
Figure 1
Functional Block
Diagram
RF OUT
Drain Supply
Vd
Gate Supply
Vg
Ground
(Back of Chip)
MMIC Chip
RF IN
Figure 2
Chip Layout and Bond
Pad Locations
(Chip Size=4.000 mm
x 2.997 mm x 50
m.
Back of Chip is RF and
DC Ground)
0.0
0.454
0.0
2.513
4.000
1.292
1.492
1.692
1.422
3.891
0.172
2.997
0.270
2.714
2.812
Dimensions in mm
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised July 27, 2001
Page 3
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
Figure 3
Recommended
Application Schematic and
Circuit Diagram
RMPA29200
29-31 GHz 2 Watt Power Amplifier MMIC
RF OUT
Ground
(Back of Chip)
MMIC Chip
RF IN
100pF
0.01
F
100pF
0.01
F
Drain Supply
(Vd=+5V)
100pF
0.01
F
Gate Supply
(-Vg)
100pF
0.01
F
Bond Wire Ls
Bond Wire Ls
MMIC has Vg and Vd bias pads accessible on
both top and bottom sides. DC bias connections
are required only on one side.
Note: Use 0.003" x 0.0005" gold ribbon or 1 mil
gold wire for bonding. RF input and output bonds
should be less than 0.015" long with stress relief.
Figure 4
Recommended
Assembly Diagram
Vd
(Positive)
100pF
Vg
(Negative)
RF
Input
RF
Output
5mil Thick
Alumina
50-Ohm
5 mil Thick
Alumina
50-Ohm
2 mil Gap
L< 0.015"
(4 Places)
Die-Attach
80Au/20Sn
0.01
F
100pF
100pF
100pF
0.01
F
0.01
F
0.01
F
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised July 27, 2001
Page 4
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE CORRESPONDING DRAIN VOLTAGE (Vd) IS PRESENT CAN
DAMAGE THE AMPLIFIER.
The following sequence must be followed to properly test the amplifier.
Recommended
Procedure
for Biasing and
Operation
Step 1: Turn off RF input power.
Step 2:
Connect the DC supply grounds to the ground of the
chip carrier.
Slowly apply negative gate bias supply voltage of
-1.5 V to Vg.
Step 3:
Slowly apply positive drain bias supply voltage of
+5 V to Vd.
Step 4:
Adjust gate bias voltage to set the quiescent current
of Idq=1500 mA.
Step 5:
After the bias condition is established, the RF input
signal may now be
applied at the appropriate frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF Input Power
(ii) Turn down and off drain voltage (Vd).
(iii) Turn down and off gate bias voltage(Vg).
RMPA29200
29-31 GHz 2 Watt Power Amplifier MMIC
-20
-15
-10
-5
0
5
10
15
20
25
20
22
24
26
28
30
32
34
36
Frequency (GHz)
S
21,
S
1
1
,
S
22 (
d
B
)
S22
S21
S11
RMPA29200 S21, S11, S22 Mag Vs. Frequency
Bias Vd=5V, Idq=1500mA, T=25C
Performance
Data
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised July 27, 2001
Page 5
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
28
29
30
31
32
33
34
26
27
28
29
30
31
32
Frequency (GHz)
P1
d
B
(d
B
m
)
-30C
+25C
+85C
RMPA29200 P1dB Vs. Frequency Vs. Temperature
Vd=5V Idq=1500mA
RMPA29200
29-31 GHz 2 Watt Power Amplifier MMIC
Performance
Data
18
20
22
24
26
28
30
32
34
36
-2
0
2
4
6
8
10 12 14 16 18
Power In (dBm)
Po
w
e
r
O
u
t
(d
B
m
)
28 GHz
29 GHz
30 GHz
31 GHz
RMPA29200 Power Out Vs. Power In
Vd=5V Idq=1500mA T=25C
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