Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Description
4 mil substrate
Small-signal gain 25 dB (typ.)
1dB compressed Pout 18 dBm (typ.)
Voltage detector included to monitor Pout
Chip size 3.0 mm x 1.2 mm
Features
The RMWD38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Driver Amplifier for use in point to
point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction
with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset.
The RMWD38001 utilizes Raytheon's 0.25m power PHEMT process and is sufficiently versatile to serve in a
variety of driver amplifier applications.
RMWD38001
37-40 GHz Driver Amplifier MMIC
Electrical
Characteristics
(At 25 C 50
system, Vd=+4 V,
Quiescent Current
(Idq)= 105 mA
Parameter
Min
Typ
Max
Unit
Frequency Range
37
40
GHz
Gate Supply Voltage (Vg)
1
-0.4
V
Gain Small Signal at
Pin = -10 dBm
21
25
dB
Gain Variation vs Frequency
2
dB
Gain at 1dB Compression
24
dB
Power Output at 1 dB
Compression
18
dBm
Power Output Saturated:
Pin = -5.5 dBm
15.5
19
dBm
Drain Current at
Pin = -10 dBm
105
mA
Drain Current at 1 dB
Compression
120
mA
Parameter
Min
Typ
Max
Unit
Drain Current at Saturated:
Pin = -5.5 dBm
120
mA
Power Added Efficiency
(PAE): at P1 dB
13
%
Input Return Loss
(Pin = -10 dBm)
15
dB
Output Return Loss
(Pin = -10 dBm)
9
dB
OIP3
28
dBm
Noise Figure
6
dB
Detector Voltage
(Pout = +17 dBm)
0.1
V
Note:
1.
Typical range of gate voltage is -0.7 to -0.1 V to set Idq of 105 mA.
Absolute
Maximum
Ratings
Parameter
Symbol
Value
Units
Positive DC voltage (+4 V Typical)
Vd
+6
Volts
Negative DC voltage
Vg
-2
Volts
Simultaneous (Vd - Vg)
Vdg
8
Volts
Positive DC Current
I
D
173
mA
RF Input Power (from 50
source)
P
IN
+8
dBm
Operating Baseplate Temperature
T
C
-30 to +85
C
Storage Temperature Range
T
stg
-55 to +125
C
Thermal Resistance
R
jc
126
C/W
(Channel to Backside)
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Figure 1
Functional Block
Diagram
RF IN
RF OUT
Drain Supply
Vd1
Drain Supply
Vd2
Drain Supply
Vd3
Drain Supply
Vd4
Gate Supply
Vg
Output Power
Detector Voltage Vdet
Ground
(Back of Chip)
MMIC Chip
Note:
Detector delivers 0.1 V DC into 3k
load resistor for >+17 dBm output power. If output power level detection is not desired, do not make
connection to detector bond pad.
0.0
0.0
0.0
0.0
3.0
3.0
1.2
1.2
0.863
0.707
0.398
0.552
0.8895
2.629
2.1305
1.33675
0.707
0.398
0.552
Figure 2
Chip Layout and Bond
Pad Locations
Chip Size is 3.0 mm x
1.2 mm. Back of chip is
RF and DC ground
Dimensions in mm
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding
to a typically 2 mil between the chip and the substrate material.
Application
Information
RMWD38001
37-40 GHz Driver Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 3
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Figure 3
Recommended
Application Schematic
Circuit Diagram
RMWD38001
37-40 GHz Driver Amplifier MMIC
L
Drain Supply
Vd = +4 V
Ground
(Back of Chip)
MMIC Chip
RF OUT
RF IN
100pF
100pF
10,000pF
L
L
L
100pF
100pF
10,000pF
L
L
L
L
L
L
L = Bond Wire Inductance
100pF
100pF
Gate Supply
Vg
L
L
L
L
Output Power
Detector Voltage
Vdet
3 k
Note:
Detector delivers 0.1 V DC into 3k
load resistor for >+17 dBm output power. If output power level detection is not desired, do not make
connection to detector bond pad.
Notes:
Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
Detector delivers 0.1V DC into 3k
load resistor for >+17 dBm output power. If output power level detection is not desired, do not make
connection to detector bond pad
100pF
10,000pF
100pF
RF
Input
RF
Output
5mil Thick
Alumina
50-Ohm
5 mil Thick
Alumina
50-Ohm
2 mil
Gap
L< 0.015"
(4 Places)
Die-Attach
80Au/20Sn
100pF
Vg
(Negative)
100pF
100pF
10,000pF
Vd
(Positive)
100pF
Detector Voltage
3k
Figure 4
Recommended
Assembly Diagram
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 4
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
RMWD38001
37-40 GHz Driver Amplifier MMIC
CAUTION: LOSS OF GATE VOLTAGES (Vg) WHILE DRAIN VOLTAGES (Vd) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier:
Recommended
Procedure
for Biasing and
Operation
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the grounds
of the chip carrier. Slowly apply negative gate
bias supply voltage of -1.5 V to Vgs.
Step 3: Slowly apply positive drain bias supply
voltages of +4 V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq=105 mA.
Step 5: After the bias condition is established, RF input
signal may now be applied at the
appropriate frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF Input Power
(ii) Turn down and off drain voltage (Vd).
(iii) Turn down and off gate voltage (Vg).
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 5
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Performance
Data
RMWD38001, 37-40GHz Driver Amplifier, Typical Performance,
Vd=4V, Idq=105mA, Chip Bonded into 50 ohm Test Fixture
-60
-50
-40
-30
-20
-10
0
10
20
30
0
10
20
30
40
50
Frequency (GHz)
S21 (
d
B)
-35
-30
-25
-20
-15
-10
-5
0
5
10
S11, S22 (
d
B)
S21
S22
S11
RMWD38001, 37-40GHz Driver Amplifier, Typical Performance,
On-Wafer Measurements, Vd=4V, Idq=105mA
22
23
24
25
26
27
28
29
-20
-15
-10
-5
Input Power (dBm)
Gain
(
d
B
)
6
8
10
12
14
16
18
20
Out
put
Power (
d
B
m
)
Gain @ 37GHz
Gain @ 38GHz
Gain @ 39GHz
Gain @ 40GHz
Pout @ 37GHz
Pout @ 38GHz
Pout @ 39GHz
Pout @ 40GHz
RMWD38001
37-40 GHz Driver Amplifier MMIC
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