Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Description
4 mil substrate
Small-signal gain 21 dB (typ.)
2.9 dB noise figure (typ.)
Chip size 3.0 mm x 1.25 mm
Features
The RMWL26001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 26.5 GHz Low Noise Amplifier for use in
point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In
conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 26 GHz
transmit/receive chipset. The RMWL26001 utilizes Raytheon's 0.25m power PHEMT process and is sufficiently
versatile to serve in a variety of low noise amplifier applications.
RMWL26001
21-26.5 GHz Low Noise Amplifier MMIC
Electrical
Characteristics
(At 25C 50
system, Vd=+4V,
Quiescent current
(Idg)=65 mA
Parameter
Min
Typ
Max
Unit
Frequency Range
21
26.5
GHz
Gate Supply Voltage
1
(Vg)
-0.5
V
Gain at Pin=-15
dBm (21-24 GHz)
20
22
26
dB
Gain at Pin=-15
dBm (21-26.5 GHz)
20
21
26
dB
Gain Variation vs
Freq. (21-26.5 GHz)
2.8
dB
Gain at 1dB Compression
(21-26.5 GHz)
20
dB
Power Output at
1dB Compression
10
dBm
Parameter
Min
Typ
Max
Unit
Drain Current at
Pin=-15 dBm
65
mA
Drain Current at
1dB Compression
80
mA
Input Return Loss
(Pin=-15 dBm)
12
dB
Output Return Loss
(Pin=-15 dBm)
12
dB
Noise Figure
2.9
4.0
dB
OIP3
22
dBm
Note:
1. Typical range of negative gate voltage is -0.8 to -0.2 V to set typical Idq of 65 mA.
Absolute
Maximum
Ratings
Parameter
Symbol
Value
Unit
Positive DC voltage (+4V Typical)
Vd
+6
Volts
Negative DC voltage
Vg
-2
Volts
Simultaneous (Vd - Vg)
Vdg
8
Volts
Positive DC Current
I
D
100
mA
RF Input Power (from 50
source)
P
IN
+8
dBm
Operating Baseplate Temperature
T
C
-30 to +85
C
Storage Temperature Range
T
stg
-55 to +125
C
Thermal Resistance
R
jc
170
C/W
(Channel to Backside)
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding
to a typically 2 mil between the chip and the substrate material.
Application
Information
Figure 1
Functional Block
Diagram
Drain Supply
V
DD1
Drain Supply
V
DD2
MMIC Chip
RF OUT
RF IN
Gate Supply
Vg
Ground
(Back of Chip)
Drain Supply
V
DD3
Drain Supply
V
DD4
Figure 2
Chip Layout and Bond
Pad Locations
Chip Size is 3.0 mm x
1.25 mm x 100
m.
Back of chip is RF and
DC ground
0.0
0.621
1.870
2.223
2.721
0.451
0.301
1.154
1.701
2.690
0.600
0.0
0.0
Dimensions in mm
RMWL26001
21-26.5 GHz Low Noise Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 3
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Note:
Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
Figure 3
Recommended
Application Schematic
Circuit Diagram
Drain Supply
Vd=+4 V
Gate Supply
Vg
100pF
L
100pF
10,000pF
L
L
L
L = Bond Wire Inductance
MMIC Chip
RF OUT
RF IN
100pF
L
L
100pF
L
L
100pF
L
L
10,000pF
L
100pF
L
L
L
100pF
L
Ground
(Back of Chip)
10,000pF
100pF
Vg
(Negative)
RF
Input
RF
Output
5mil Thick
Alumina
50-Ohm
5 mil Thick
Alumina
50-Ohm
2 mil Gap
L< 0.015"
(4 Places)
Die-Attach
80Au/20Sn
100pF
100pF
Vdd
(Positive)
100pF
100pF
10,000pF
100pF
Figure 4
Recommended
Assembly Diagram
RMWL26001
21-26.5 GHz Low Noise Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 4
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Performance
Data
0
5
10
15
20
25
21
21.5
22
22.5
23
23.5
24
24.5
25
25.5
26
26.5
Frequency (GHz)
S
21
(
d
B)
-25
-20
-15
-10
-5
0
S
11
S
22
(dB)
S
21
S
11
S
22
RMWL26001 26 GHz Low Noise Amplifier, Typical Performance
On-Wafer Measurements, I
DQ
= 65 mA, V
DD
= 4.0 V
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the grounds
of the chip carrier. Slowly apply negative gate
bias supply voltage of -1.5 V to Vg.
Step 3: Slowly apply positive drain bias supply voltage
of +4 V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq=65 mA.
Step 5: After the bias condition is established, RF input
signal may now be applied at the appropriate
frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier:
Recommended
Procedure
for Biasing and
Operation
RMWL26001
21-26.5 GHz Low Noise Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 5
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Performance
Data
0
5
10
15
20
25
0
5
10
15
20
25
30
Frequency (GHz)
S
21
(dB
)
-25
-20
-15
-10
-5
0
S
11
S
22
(dB
)
S
21
S
11
S
22
RMWL26001 26 GHz Low Noise Amplifier, Typical Performance
50 Ohm Test Fixture Included. I
DQ
= 65 mA, V
DD
= 4.0 V
2.5
2.6
2.7
2.8
2.9
3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4
20.5
21
21.5
22
22.5
23
23.5
24
24.5
25
25.5
26
26.5
Frequency (GHz)
N
o
i
se Fi
gur
e (dB
)
RMWL26001 26 GHz Low Noise Amplifier, Typical Noise Figure
On-Wafer Measurements, I
DQ
= 65 mA, V
DD
= 4.0 V
RMWL26001
21-26.5 GHz Low Noise Amplifier MMIC
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