SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* High reliability
* Low leakage
* Low forward voltage drop
* High current capability
MECHANICAL DATA
* Case: Molded plastic black body
* Epoxy: Device hasUL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.19 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1A1
THRU
1A7
R-1
MAXIMUM RATINGS (At T
A
= 25
o
C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (At T
A
= 25
o
C unless otherwise noted)
NOTES : Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
Dimensions in inches and (millimeters)
2002-11
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
A
= 25
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note)
Typical Thermal Resistance
SYMBOL
V
RRM
V
DC
I
FSM
C
J
T
J
, T
STG
V
RMS
1A1
1A2
1A3
1A4
1A5
1A6
1A7
UNITS
50
100
400
800
1000
Volts
Volts
Volts
Amps
35
50
420
600
70
100
280
400
600
560
800
700
1000
1.0
25
15
60
Amps
pF
0
C
200
140
200
Operating and Storage Temperature Range
R
J A
I
O
-55 to + 150
0
C/ W
at Rated DC Blocking Voltage
CHARACTERISTICS
Maximum Full Load Reverse Current Full Cycle Average
.375" (9.5mm) lead length at T
L
= 75
o
C
V
F
SYMBOL
I
R
1A1
1A2
1A3
1A4
1A5
1A6
1A7
U N I T S
1.1
uAmps
uAmps
Maximum DC Reverse Current
Maximum Instantaneous Forward Voltage at 1.0A DC
Volts
@T
A
= 25
o
C
@T
A
= 100
o
C
5.0
50
100
.787 (20.0)
MIN.
.106 (2.7)
.126 (3.2)
.787 (20.0)
MIN.
.102 (2.6)
.091 (2.3)
DIA.
.025 (0.65)
.021 (0.55)
DIA.
RECTRON
RATING AND CHARACTERISTIC CURVES ( 1A1 THRU 1A7 )
FIG. 1 - TYPICAL FORWARD CURRENT
AVERAGE FORWARD CURRENT, (A)
AMBIENT TEMPERATURE, ( )
DERATING CURVE
1.0
.8
.6
.4
.2
0
0
25
50
75
100
125 150 175
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
JUNCTION CAPACITANCE,
(pF
)
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE, ( V )
200
100
60
40
20
10
6
4
2
1
.1
.2 .4
1.0 2
4
10
20 40 100
TJ = 25
FIG. 3 - MAXIMUM NON-REPETITIVE FORWARD
PEAK FORWARD SURGE CURRENT, (A)
NUMBER OF CYCLES AT 60Hz
SURGE CURRENT
1
2
4
6 8 10
20
40 6080100
50
40
30
20
10
0
8.3ms Single Half Sine-Wave
(JEDED Method)
TJ = 25
Pulse Width=300uS
1% Duty Cycle
FIG. 2 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
INSTANTANEOUS FORWARD
INSTANTANEOUS FORWARD VOLTAGE, (V)
CURRENT, (A)
.6
.8
1.0
1.2
1.4 1.5
20
10
4
2
1.0
.4
.2
.1
.04
.02
.01
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
TJ = 25
0
20
40
60
80
100
120 140
10
1.0
0.1
.01
CURRENT, (uA)
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