SURFACE MOUNT GLASS PASSIVATED
VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.098 gram
* Epoxy : Device has UL flammability classification 94V-0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS (At T
A
= 25
o
C unless otherwise noted)
HFM201
THRU
HFM208
DO-214AA
MAXIMUM RATINGS (At T
A
= 25
o
C unless otherwise noted)
HIGH EFFICIENCY SILICON RECTIFIER
NOTES : 1. Test Conditions: I
F
=0.5A, I
R
=-1.0A, I
RR
=-0.25A.
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts.
Dimensions in inches and (millimeters)
2001-5
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
at T
A
= 50
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
V
RMS
Volts
Volts
Volts
Amps
2.0
60
30
-65 to + 175
Amps
pF
0
C
UNITS
20
Maximum DC Reverse Current at
CHARACTERISTICS
V
F
SYMBOL
I
R
trr
UNITS
uAmps
nSec
Maximum Full Load Reverse Current, Full cycle Average T
A
= 55
o
C
Maximum Forward Voltage at 2.0A DC
Volts
5.0
50
Maximum Reverse Recovery Time (Note 1)
Rated DC Blocking Voltage
HFM201
HFM206
HFM203
HFM207 HFM208
HFM204
50
uAmps
1.0
1.7
75
HFM201
50
35
50
HFM202
100
70
100
HFM204
300
210
300
HFM205
400
280
400
HFM207
800
560
800
HFM208
1000
700
1000
HFM203
200
140
200
HFM206
600
420
600
HFM202
HFM205
1.3
@T
A
= 25
o
C
@T
A
= 125
o
C
100
uAmps
0.012 (0.305)
0.006 (0.152)
0.008 (0.203)
0.004 (0.102)
0.220 (5.59)
0.205 (5.21)
0.030 (0.76)
0.060 (1.52)
0.084 (2.13)
0.096 (2.44)
0.160 (4.06)
0.180 (4.57)
0.130 (3.30)
0.155 (3.94)
0.083 (2.11)
0.077 (1.96)
MECHANICAL DATA
RECTRON
RATING AND CHARACTERISTIC CURVES ( HFM201 THRU HFM208 )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
D.U.T
25 Vdc
(approx)
( - )
( - )
( + )
( + )
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
NOTES: 1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
trr
+0.5A
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
10/20 ns/cm
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
AVERAGE FORWARD CURENT, (A)
AMBIENT TEMPERATURE ( )
4.0
2.0
0 25 50 75 100 125 150 175
0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
REVERSE VOLTAGE, ( V )
200
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0
2
4
10
20
40
100
HFM201~HFM205
HFM206~HFM208
TJ = 25
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (uA)
PERCENT OF RATED PEAK
REVERSE VOLTAGE, (%)
TJ = 25
TJ = 100
TJ = 150
100
10
1.0
.1
.01
40
0
20
60
80
100
120
140
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT, (A)
NUMBER OF CYCLES AT 60Hz
70
60
50
40
30
20
10
0
1
2
5
10
20
50
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT, (A)
INSTANTANEOUS FORWARD VOLTAGE, (V)
10
1.0
.1
.01
.001
0
.2
.4
.6
.8
1.0
1.2 1.4 1.6 1.8
Pulse Width = 300uS
1% Duty Cycle
TJ = 25
HFM206~HFM208
HFM201~HFM203
HFM204~HFM205
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