SURFACE MOUNT GLASS PASSIVATED
VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.24 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS (At T
A
= 25
o
C unless otherwise noted)
HFM301
THRU
HFM308
DO-214AB
MAXIMUM RATINGS (At T
A
= 25
o
C unless otherwise noted)
HIGH EFFICIENCY SILICON RECTIFIER
NOTES :
1. Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts.
Dimensions in inches and (millimeters)
1998-8
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
at T
A
= 50
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
V
RMS
Volts
Volts
Volts
Amps
3.0
200
70
-65 to + 175
Amps
pF
0
C
UNITS
50
Maximum DC Reverse Current at
CHARACTERISTICS
V
F
SYMBOL
I
R
trr
UNITS
uAmps
nSec
Maximum Full Load Reverse Current, Full cycle Average T
A
= 55
o
C
Maximum Forward Voltage at 3.0A DC
Volts
10
50
Maximum Reverse Recovery Time (Note 1)
Rated DC Blocking Voltage
HFM301
HFM306
HFM303
HFM307 HFM308
HFM304
50
uAmps
1.0
1.7
75
HFM301
50
35
50
HFM302
100
70
100
HFM304
300
210
300
HFM305
400
280
400
HFM307
800
560
800
HFM308
1000
700
1000
HFM303
200
140
200
HFM306
600
420
600
HFM302
HFM305
1.3
@T
A
= 25
o
C
@T
A
= 125
o
C
150
uAmps
150
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