VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Low leakage
* Low forward voltage
* Mounting position: Any
* Surge overload rating: 200 amperes peak
* Ideal for printed circuit boards
* High forward surge current capability
* UL listed the recognized component directory, file #E94233
* Epoxy: Device has UL flammability classification 94V-O
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RS801M
THRU
RS807M
MAXIMUM RATINGS (At T
A
= 25
o
C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (At T
A
= 25
o
C unless otherwise noted)
SINGLE-PHASE SILICON BRIDGE RECTIFIER
RS-8M
Dimensions in inches and (millimeters)
2001-5
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
DC
I
O
I
FSM
T
J,
T
STG
V
RMS
Volts
Volts
Amps
8.0
200
-55 to + 150
0
C
UNITS
Maximum Average Forward Rectified Output Current at Tc = 75
o
C
50
200
400
100
600
800
1000
35
140
280
70
420
560
700
50
200
400
100
600
800
1000
Volts
Amps
RS801M
RS803M RS804M
RS802M
RS805M RS806M RS807M
DC Blocking Voltage per element
CHARACTERISTICS
V
F
SYMBOL
I
R
UNITS
1.1
0.2
mAmps
uAmps
Maximum Reverse Current at Rated
Maximum Forward Voltage Drop per element at 8.0A DC
Volts
@T
A
= 25
o
C
@T
C
= 100
o
C
10
RS801M
RS803M RS804M
RS802M
RS805M RS806M RS807M
.189 (4.8)
.173 (4.4)
.150 (3.8)
.134 (3.4)
.114 (2.9)
.098 (2.5)
.031 (0.8)
.023 (0.6)
.303 (7.7)
.287 (7.3)
.303 (7.7)
.402 (10.2)
.043 (1.1)
.106 (2.7)
1.169 (29.7)
1.193 (30.3)
.096 (2.3)
.094 (2.4)
.078 (2.0)
.035 (0.9)
.287 (7.3)
.386 (9.8)
.122
(3.1
)
.425
(10.8
)
.441
(11.2
)
.697
(17.7
)
.800
(20.3
)
.669
(17.0
)
.708
(18.0
)
.150
(3.8
)
.165
(4.2
)
.197
(5
)
f.134
(3.1
)
MECHANICAL DATA
RECTRON
RATING AND CHARACTERISTIC CURVES (RS801M THRU RS807M)
POWER DISSIPATION
AVERAGE RECTIFIED FORWARD CURRENT, Io (A)
POWER DISSIPATION PF(W)
0
2
4
6
8
12
14
28
24
20
16
12
4
0
sine wave
Tj=150
8
10
per one diode
TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT, (A)
INSTANTANEOUS FORWARD VOLTAGE, (V)
TC = 150 (TYP)
TC = 25 (TYP)
0.4
0.6
0.8
1
1.2
0.1
0.2
0.5
1
2
5
10
20
pulse test
non-repetitive
Tj=25
1 cycle
8.3ms 8.3ms
0
I
FSM
SURGE FORWARD CURRENT CAPABILITY
PEAK FORWARD SURGE CURRENT, (A)
NUMBER OF CYCLE
sine wave
260
200
100
0
1
2
5
10
20
50
100
TYPICAL FORWARD CURRENT
DERATING CURVE
AVERAGE FORWARD CURRENT, (A)
AMBIENT TEMPERATURE, ( )
on glass-epoxi substrate
P.C.B
soldering land 5mmf
sine wave
R-load
free in air
0
40
80
120
160
0
1
2
3
TYPICAL FORWARD CURRENT
DERATING CURVE
AVERAGE FORWARD CURRENT, (A)
CASE TEMPERATURE, ( )
heatsink
Tc
Tc
sine wave
R-load
on heatsink
0
25
50
75
100
125
150
175
1
0
6
2
3
4
5
7
9
8
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