SURFACE MOUNT GLASS PASSIVATED
VOLTAGE RANGE 50 to 400 Volts CURRENT 2.0 Amperes
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.098 gram
* Epoxy : Device has UL flammability classification 94V-0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS (At T
A
= 25
o
C unless otherwise noted)
EFM201
THRU
EFM206
DO-214AA
MAXIMUM RATINGS (At T
A
= 25
o
C unless otherwise noted)
SUPER FAST SILICON RECTIFIER
NOTES : 1. Test Conditions: I
F
=0.5A, I
R
=-1.0A, I
RR
=-0.25A.
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts.
Dimensions in inches and (millimeters)
2001-5
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
at T
A
= 55
o
C
Peak Forward Surge Current I
FM
(surge): 8.3 ms single half
sine-wave superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
V
RMS
Volts
Volts
Volts
Amps
2.0
75
30
-65 to + 175
Amps
pF
0
C
UNITS
EFM201
EFM204
EFM202
EFM205
EFM206
EFM203
50
200
100
300
400
150
35
140
70
210
280
105
50
200
100
300
400
150
20
at Rated DC Blocking Voltage
CHARACTERISTICS
Maximum Reverse Recovery Time (Note 1)
V
F
SYMBOL
I
R
trr
UNITS
0.95
5.0
uAmps
nSec
Maximum DC Reverse Current
Maximum Forward Voltage at 2.0A DC
Volts
@T
A
= 25
o
C
@T
A
=150
o
C
EFM201
EFM204
EFM202
EFM205
EFM206
EFM203
1.25
50
35
0.012 (0.305)
0.006 (0.152)
0.008 (0.203)
0.004 (0.102)
0.220 (5.59)
0.205 (5.21)
0.030 (0.76)
0.060 (1.52)
0.084 (2.13)
0.096 (2.44)
0.160 (4.06)
0.180 (4.57)
0.130 (3.30)
0.155 (3.94)
0.083 (2.11)
0.077 (1.96)
MECHANICAL DATA
RECTRON
RATING AND CHARACTERISTIC CURVES ( EFM201 THRU EFM206 )
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
REVERSE VOLTAGE, ( V )
200
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0
2
4
10
20 40
100
EFM201~EFM204
EFM205~EFM206
TJ = 25
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
D.U.T
25 Vdc
(approx)
( - )
( - )
( + )
( + )
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
NOTES:
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
trr
+0.5A
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
10 ns/cm
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
AVERAGE FORWARD CURENT, (A)
AMBIENT TEMPERATURE ( )
3.0
2.0
1.0
0 25 50 75 100 125 150 175
0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (uA)
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
TJ = 25
TJ = 100
TJ = 150
100
10
1.0
.1
.01
40
0
20
60
80
100
120
140
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT, (A)
NUMBER OF CYCLES AT 60Hz
105
90
75
60
45
30
15
0
1
2
5
10
20
50
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
INSTANTANEOUS FORWARD CURRENT, (A)
0
.2
.4
.6
.8
1.0
1.2
1.4
.001
.01
.1
1.0
10
EFM201~EFM204
EFM205~EFM206
Pulse Width = 300uS
1% Duty Cycle
TJ = 25
CHARACTERISTICS
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