Rev.1.00, Aug.20.2004, page 1 of 6
FS50SM-5A
High-Speed Switching Use
Nch Power MOS FET
REJ03G0277-0100
Rev.1.00
Aug.20.2004
Features
Drive voltage : 10 V
V
DSS
: 250 V
r
DS(ON) (max)
: 0.068
I
D
: 50 A
Outline
TO-3P
1
1
2
1. Gate
2. Drain
3. Source
4. Drain
3
3
4
2, 4
Applications
Switching mode power supply, plasma display TVs, DC-DC converters, etc.
Maximum Ratings
(Tc = 25C)
Parameter
Symbol
Ratings
Unit
Conditions
Drain-source voltage
V
DSS
250
V
V
GS
= 0 V
Gate-source voltage
V
GSS
30
V
V
DS
= 0 V
Drain current
I
D
50
A
Drain current (Pulsed)
I
DM
150
A
Maximum power dissipation
P
D
250
W
Channel temperature
Tch
55 to +150
C
Storage temperature
Tstg
55 to +150
C
Mass
--
4.8
g
Typical value
FS50SM-5A
Rev.1.00, Aug.20.2004, page 2 of 6
Electrical Characteristics
(Tch = 25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test conditions
Drain-source breakdown voltage
V
(BR)DSS
250
--
--
V
I
D
= 1 mA, V
GS
= 0 V
Gate-source breakdown voltage
V
(BR)GSS
30
--
--
V
I
G
=
100
A, V
DS
= 0 V
Gate-source leakage current
I
GSS
--
--
10
A
V
GS
=
25 V, V
DS
= 0 V
Drain-source leakage current
I
DSS
--
--
1
mA
V
DS
= 250 V, V
GS
= 0 V
Gate-source threshold voltage
V
GS(th)
3.0
3.5
4.0
V
I
D
= 1 mA, V
DS
= 10 V
Drain-source on-state resistance
r
DS(ON)
--
0.052
0.068
I
D
= 25 A, V
GS
= 10 V
Drain-source on-state voltage
V
DS(ON)
--
1.3
1.7
V
I
D
= 25 A, V
GS
= 10 V
Forward transfer admittance
| y
fs
|
--
35
--
S
I
D
= 25 A, V
DS
= 10 V
Input capacitance
Ciss
--
3500
--
pF
Output capacitance
Coss
--
500
--
pF
Reverse transfer capacitance
Crss
--
50
--
pF
V
DS
= 25 V, V
GS
= 0 V,
f = 1MHz
Turn-on delay time
t
d(on)
--
60
--
ns
Rise time
t
r
--
110
--
ns
Turn-off delay time
t
d(off)
--
270
--
ns
Fall time
t
f
--
90
--
ns
V
DD
= 150 V, I
D
= 25 A,
V
GS
= 10 V,
R
GEN
= R
GS
= 50
Source-drain voltage
V
SD
--
1.5
2.0
V
I
S
= 25 A, V
GS
= 0 V
Thermal resistance
Rth(ch-c)
--
--
0.50
C/W
Channel to case
FS50SM-5A
Rev.1.00, Aug.20.2004, page 3 of 6
Performance Curves
Drain Power Dissipation Derating Curve
Case Temperature Tc (C)
Drain Power Dissipation P
D
(W)
Maximum Safe Operating Area
Drain-Source Voltage V
DS
(V)
Drain Current I
D
(A)
Output Characteristics (Typical)
Drain Current I
D
(A)
Drain-Source Voltage V
DS
(V)
Output Characteristics (Typical)
Drain Current I
D
(A)
Drain-Source Voltage V
DS
(V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
Gate-Source Voltage V
GS
(V)
Drain-Source On-State Voltage V
DS(ON)
(V)
On-State Resistance vs.
Drain Current (Typical)
Drain Current I
D
(A)
Drain-Source On-State Resistance r
DS(ON)
(
)
0
100
200
300
50
150
250
0
50
25
75
100
125 150 175
10
1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
10
0
10
1
3
2
5 7
10
2
3
2
5 7
10
3
3
2
5 7
tw = 10
s
100
s
1 ms
DC
0
40
80
120
160
0
4
8
12
16
20
P
D
= 250W
8V
6V
7V
10V
0
10
20
30
40
50
0
4
8
12
16
5.5V
6V
5V
P
D
= 250W
V
GS
= 20V
5.5V
0
0.04
0.08
0.12
0.16
10
0
2
10
1
3 5 7
2
10
2
3 5 7
2
10
3
3 5 7
V
GS
= 10V
20V
0
2
4
6
8
10
0
20
16
12
8
4
I
D
= 75A
50A
25A
Tc = 25C
Single Pulse
Tc = 25C
Pulse Test
V
GS
=
20V
7V
Tc = 25C
Pulse Test
Tc = 25C
Pulse Test
Tc = 25C
Pulse Test
FS50SM-5A
Rev.1.00, Aug.20.2004, page 4 of 6
Transfer Characteristics (Typical)
Gate-Source Voltage V
GS
(V)
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current (Typical)
Drain Current I
D
(A)
Forward Transfer Admittance | y
fs
| (S)
Switching Characteristics (Typical)
Drain-Source Voltage V
DS
(V)
Capacitance vs.
Drain-Source Voltage (Typical)
Drain Current I
D
(A)
Capacitance (pF)
Switching Time (ns)
Gate-Source Voltage vs.
Gate Charge (Typical)
Gate Charge Qg (nC)
Gate-Source Voltage V
GS
(V)
Source-Drain Diode Forward
Characteristics (Typical)
Source-Drain Voltage V
SD
(V)
Source Current I
S
(A)
0
10
20
30
40
50
0
4
8
12
10
1
10
1
10
0
2
5
7
2
5
7
2
5
7
10
2
2
5
7
10
3
10
1
10
2
5
5
5
7
3
7
10
3
10
0
3
2
3
2
2
7
10
1
10
2
2
3
4
5
7
10
3
2
3
4
5
7
td(off)
td(on)
tr
tf
10
0
10
1
2
2
4
4
7
10
2
3
3
5
5
7
10
0
10
1
2
2
4
4
7
10
2
3
3
5
5
7
10
0
10
1
2
3
4
5
7
10
2
2
3
4
5
7
0
4
8
12
16
0
40
80
120
160
200
V
DS
= 100V
200V
0
40
80
120
160
0
0.4
0.8
1.2
1.6
2.0
Tc = 25C
V
DS
= 30V
Pulse Test
V
DS
= 10V
Pulse Test
Tc = 25C
75C
125C
Tch = 25C
f = 1MHz
V
GS
= 0V
Ciss
Coss
Crss
Tch = 25C
V
DD
= 150V
V
GS
= 10V
R
GEN
= R
GS
= 50
Tch = 25C
I
D
= 50A
Tc = 125C
25C
V
GS
= 0V
Pulse Test
FS50SM-5A
Rev.1.00, Aug.20.2004, page 5 of 6
Channel Temperature Tch (C)
Threshold Voltage vs.
Channel Temperature (Typical)
Gate-Source Threshold Voltage V
GS(th)
(V)
Channel Temperature Tch (C)
Breakdown Voltage vs.
Channel Temperature (Typical)
On-State Resistance vs.
Channel Temperature (Typical)
Channel Temperature Tch (C)
Drain-Source On-State Resistance r
DS(ON)
(tC)
Drain-Source On-State Resistance r
DS(ON)
(25C)
Drain-Source Breakdown Voltage V
(BR)DSS
(tC)
Drain-Source Breakdown Voltage V
( BR)DSS
(25C)
Transient Thermal Impedance Characteristics
Pulse Width tw (s)
Transient Thermal Impedance Zth(ch-c) (C/W)
Switching Time Measurement Circuit
Switching Waveform
10
1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
50
0
50
100
150
0
4
3
2
1
5
6
50
0
50
100
150
0.4
0.8
1.2
1.6
50
0
50
100
150
10
2
10
1
2
3
5
7
10
0
2
3
5
7
2 3 5 7
10
4
10
3
2 3 5 710
1
2 3 5 710
0
2 3 5 710
1
2 3 5 710
2
0.5
0.2
D = 1.0
0.1
0.05
0.02
0.01
Single Pulse
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
90%
10%
tf
Vin Monitor
D.U.T.
R
L
V
DD
Vout
Monitor
R
GEN
R
GS
V
GS
= 10V
I
D
= 25A
Pulse Test
V
DS
= 10V
I
D
= 1mA
Pulse Test
V
GS
= 0V
I
D
= 1mA
Pulse Test
P
DM
tw
D =
T
tw
T
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