Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
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H5N3004P
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1523 (Z)
Rev.0
Apr. 2002
Features
Low on-resistance
Low leakage current
High speed switching
Low gate charge (Qg)
Avalanche ratings
Outline
TO-3P
1
2
3
D
S
G
1. Gate
2. Drain (Flange)
3. Source
H5N3004P
Rev.0, Apr. 2002, page 2 of 2
Absolute Maximum Ratings
(Ta=25
C)
Item Symbol
Ratings
Unit
Drain to source voltage
V
DSS
300
V
Gate to source voltage
V
GSS
30 V
Drain current
I
D
25
A
Drain peak current
I
D
(pulse)
Note
1
100
A
Body-drain diode reverse drain current I
DR
25
A
Body-drain diode reverse drain peak
current
I
DR
(pulse)
Note
1
100
A
Avalanche current
I
AP
Note
3
25
A
Channel dissipation
Pch
Note
2
150 W
Channel to case Thermal impedance
ch-c 0.833
C/W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10 s, duty cycle 1%
2. Value at Tc = 25
C
3.
Tch
150C
H5N3004P
Rev.0, Apr. 2002, page 3 of 3
Electrical Characteristics
(Ta=25
C)
Item Symbol
Min
Typ
Max
Unit
Test
Conditions
Drain to source breakdown voltage
V
(BR)DSS
300
-- V
I
D
= 10 mA, V
GS
= 0
Zero gate voltage drain current
I
DSS
--
1
A V
DS
= 300 V, V
GS
= 0
Gate to source leak current
I
GSS
--
0.1
A V
GS
= 30 V, V
DS
= 0
Gate to source cutoff voltage
V
GS(off)
3.0 4.0 V
V
DS
= 10 V, I
D
= 1 mA
Forward transfer admittance
|y
fs
| 15 25 -- S
I
D
= 12.5 A, V
DS
= 10 V
Note
4
Static drain to source on state
resistance
R
DS(on)
-- 0.076
0.
093
I
D
= 12.5 A, V
GS
= 10 V
Note
4
Input capacitance
Ciss
-- 3600 pF
V
DS
= 25 V
Output capacitance
Coss
-- 400 pF
V
GS
= 0
Reverse transfer capacitance
Crss
-- 100
pF
f = 1 MHz
Turn-on delay time
td(on)
-- 50 ns
I
D
= 12.5 A
Rise time
tr
-- 120 -- ns
R
L
= 12
Turn-off delay time
td(off)
-- 180 ns
V
GS
= 10 V
Fall time
tf
-- 90 --
ns
Rg = 10
Total gate charge
Qg
-- 110 -- nC
V
DD
= 240 V
Gate to source charge
Qgs
-- 18 -- nC
V
GS
= 10 V
Gate to drain charge
Qgd
-- 55 -- nC
I
D
= 25 A
Body-drain diode forward voltage
V
DF
-- 0.9
1.35 V
I
F
= 25 A, V
GS
= 0
Body-drain diode reverse recovery
time
trr
-- 250 -- ns
I
F
= 25 A, V
GS
= 0
diF/dt = 100 A/
s
Body-drain diode reverse recovery
charge
Qrr
-- 2.3 --
C
Notes: 4. Pulse test
H5N3004P
Rev.0, Apr. 2002, page 4 of 4
Main Characteristics
200
150
100
50
0
50
100
150
200
300
100
30
10
3
1
1
3
10
30
100
300
1000
100
80
60
40
20
0
4
8
12
16
20
100
80
60
40
20
0
2
4
6
8
10
0.3
0.1
1000
Ta = 25
C
10 V
V = 5 V
GS
5.5 V
Tc = 75
C
25
C
-25C
Channel Dissipation Pch (W)
Case Temperature Tc (
C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Pulse Test
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
V = 10 V
DS
Pulse Test
100
s
1 ms
PW = 10 ms (1shot)
DC Operation (Tc = 25
C)
Operation in
this area is limited
by R
DS(on)
10
s
6 V
7 V
8 V
6.5 V
H5N3004P
Rev.0, Apr. 2002, page 5 of 5
4
3
2
1
0
4
8
12
16
20
1
5
20
100
2
10
50
200
100
50
20
10
200
160
120
80
40
-40
0
40
80
120
160
0
0.2
0.5
2
5
20
50 100
100
20
50
5
10
2
0.5
1
0.2
1
10
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(V)
Drain Current I
D
(A)
Drain to Source on State Resistance
R
DS(on)
(m
)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (
C)
Drain to source on State Resistance
R
DS(on)
(m
)
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
5
DS
V = 10 V
Pulse Test
V = 10 V
GS
Pulse Test
I = 25 A
D
15 A
5 A
Pulse Test
V = 10 V, 15 V
GS
Pulse Test
5 A
15 A
I = 25 A
D
25
C
Tc =
-25C
75
C
H5N3004P
Rev.0, Apr. 2002, page 6 of 6
0.1
0.3
1
3
10
30
100
1000
200
500
100
20
50
10
0
25
50
75
100
125
20000
50000
10000
1000
2000
5000
500
400
300
200
100
0
20
16
12
8
4
40
80
120
160
200
0
10000
1000
10
100
0.1
0.3
1
3
10
30
100
200
500
100
50
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
I = 25 A
D
V
DS
V
GS
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nC)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Dynamic Input Characteristics
Drain Current I
D
(A)
Switching Time t (ns)
Switching Characteristics
di / dt = 100 A /
s
V = 0, Ta = 25
C
GS
V = 50 V
100 V
240 V
DD
V = 240 V
100 V
50 V
DD
r
t
d(on)
t
d(off)
t
t f
V = 10 V, V 150 V
PW = 10
s, duty < 1 %
R =10
GS
DD
G
r
t
t f
=
H5N3004P
Rev.0, Apr. 2002, page 7 of 7
0
0.4
0.8
1.2
1.6
2.0
100
80
60
40
20
V = 0 V
GS
10 V
Source to Drain Voltage V
SD
(V)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I
DR
(A)
Pulse Test
5
4
3
2
1
-50
0
50
100
150
200
0
Case Temperature Tc (
C)
Gate to Source Cutoff Voltage
vs. Case Temperature
Gate to Source Cutoff Voltage
V
GS(off)
(V)
I = 10 mA
D
1 mA
0.1 mA
V = 10 V
DS
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 150 V
DD
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
10
90%
10%
t
f
Switching Time Test Circuit
Waveform
5 V
H5N3004P
Rev.0, Apr. 2002, page 8 of 8
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
DM
P
PW
T
D =
PW
T
Gch - c(t) = Cs (t) Gch - c
Gch - c = 0.833C/W, Tc = 25C
Tc = 25
C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1 shot pulse
Pulse Width PW (S)
Normalized Transient Thermal Impedance
s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
H5N3004P
Rev.0, Apr. 2002, page 9 of 9
Package Dimensions
3.2 0.2
4.8 0.2
1.5
0.3
2.8
0.6 0.2
1.0 0.2
18.0 0.5
19.9 0.2
15.6 0.3
0.5
1.0
5.0 0.3
1.6
1.4 Max
2.0
2.0
14.9 0.2
3.6
0.9
1.0
5.45 0.5
5.45 0.5
Hitachi Code
JEDEC
JEITA
Mass (reference value)
TO-3P
--
Conforms
5.0 g
As of July, 2001
Unit: mm
H5N3004P
Rev.0, Apr. 2002, page 10 of 10
Disclaimer
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copyright, trademark, or other intellectual property rights for information contained in this document.
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
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5. This product is not designed to be radiation resistant.
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7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
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