H5N5001FM
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1380 (Z)
1st. Edition
Mar. 2001
Features
Low on-resistance
: R
DS(on)
=1.1
typ.
Low leakage current
: I
DSS
=1
A max (at V
DS
= 500 V)
High speed switching : tf = 15ns typ (at V
GS
= 10 V, V
DD
= 250 V, I
D
= 2.5 A)
Low gate charge
: Qg = 15nC typ (at V
DD
= 400 V, V
GS
= 10 V, I
D
= 5 A)
Avalanche ratings
Outline
1
2
3
TO220FM
1. Gate
2. Drain
3. Source
D
G
S
H5N5001FM
2
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
500
V
Gate to source voltage
V
GSS
30
V
Drain current
I
D
5
A
Drain peak current
I
D(pulse)
Note1
20
A
Body-drain diode reverse drain current
I
DR
5
A
Body-drain diode reverse drain peak
current
I
DR(pulse)
Note1
20
A
Avalanche current
I
AP
Note3
5
A
Channel dissipation
Pch
Note2
30
W
Channel to case Thermal Impedance
ch-c
4.17
C/W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. PW
10
s, duty cycle
1 %
2. Value at Tc = 25
C
3. Tch
150
C
H5N5001FM
3
Electrical Characteristics (Ta = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
500
--
--
V
I
D
= 10mA, V
GS
= 0
Gate to source leak current
I
GSS
--
--
0.1
A
V
GS
=
30V, V
DS
= 0
Zero gate voltege drain current I
DSS
--
--
1
A
V
DS
= 500 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
3.0
--
4.0
V
I
D
= 1mA, V
DS
= 10V
Static drain to source on state
resistance
R
DS(on)
--
1.1
1.5
I
D
= 2.5A, V
GS
= 10V
Note4
Forward transfer admittance
|y
fs
|
3.0
4.5
--
S
I
D
= 2.5A, V
DS
= 10V
Note4
Input capacitance
Ciss
--
580
--
pF
V
DS
= 25V
Output capacitance
Coss
--
70
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
13
--
pF
f = 1MHz
Turn-on delay time
t
d(on)
--
20
--
ns
I
D
= 2.5A
Rise time
t
r
--
15
--
ns
V
GS
= 10V
Turn-off delay time
t
d(off)
--
65
--
ns
R
L
= 100
Fall time
t
f
--
15
--
ns
R
g
= 10
Total gate charge
Qg
--
15
--
nC
V
DD
= 400V
Gate to source charge
Qgs
--
3
--
nC
V
GS
= 10V
Gate to drain charge
Qgd
--
8
--
nC
I
D
= 5A
Bodydrain diode forward
voltage
V
DF
--
0.85
1.3
V
I
F
= 5A, V
GS
= 0
Bodydrain diode reverse
recovery time
t
rr
--
400
--
ns
I
F
= 5A, V
GS
= 0
diF/ dt =100A/
s
Bodydrain diode reverse
recovery charge
Q
rr
--
1.5
--
C
Note:
4. Pulse test
H5N5001FM
4
Main Characteristics
40
30
20
10
0
50
100
150
200
30
10
3
1
0.3
0.1
1
3
10
30
100
300
1000
10
8
6
4
2
0
10
20
30
40
50
10
8
6
4
2
0
2
4
6
8
10
0.03
0.01
100
Ta = 25 C
V = 4V
GS
5 V
5.5 V
Tc = 75C
25C
25C
100 s
1 ms
PW = 10 ms (1shot)
DC Operation (Tc = 25C)
10 s
4.5 V
8 V
10 V
6 V
Channel Dissipation Pch (W)
Case Temperature Tc (C)
Power vs. Temperature Derating
Pulse Test
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
V = 10 V
Pulse Test
DS
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Operation in
this area is
limited by R
DS(on)
H5N5001FM
5
20
16
12
8
4
0
2
4
6
8
10
0.1
0.5
2
10
0.2
1
5
2
1
0.5
0.2
0.1
5
4
3
2
1
40
0
40
80
120
160
0
0.1 0.2
1
2
10 20
50
50
10
20
2
5
1
0.2
0.5
0.1
V = 10 V, 15 V
GS
0.5
5
I = 5 A
D
1 A
V = 10 V
GS
I = 5 A
D
2 A
1 A
2 A
50
20
5
25 C
Tc = 25 C
75 C
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on
)
Drain to Source Saturation Voltage
Pulse Test
Case Temperature T
c
(C)
R ( )
DS(on)
Static Drain to Source on State Resistance
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
V = 10 V
Pulse Test
DS
Drain Current I (A)
D
Drain to Source On State Resistance
R ( )
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Pulse Test
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