Rev.1.00 Oct 12, 2004 page 1 of 5
HRV103A
Silicon Schottky Barrier Diode for Rectifying
REJ03G0398-0100
Rev.1.00
Oct 12, 2004
Features
Low forward voltage drop and suitable for high efficiency rectifying.
Thin Ultra small Resin Package (TURP) is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HRV103A S1 TURP
Pin Arrangement
Cathode mark
Mark
1
2
S1
1. Cathode
2. Anode
HRV103A
Rev.1.00 Oct 12, 2004 page 2 of 5
Absolute Maximum Ratings
(Ta = 25
C)
Item Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
30
V
Reverse voltage
V
R
30
V
Average rectified current
I
O
*
2
1
A
Non-Repetitive peak forward surge current
I
FSM
*
1
5
A
Junction temperature
Tj
125
C
Storage temperature
Tstg
-
55 to +125
C
Notes: 1. 10ms sine wave 1 pulse
2. Ta = 44
C, With Ceramics board (board size: 50mm
50 mm, Land size 2mm
2 mm)
Short form wave (
180
C), VR = 10 V.
Electrical Characteristics
(Ta = 25
C)
Item Symbol
Min
Typ
Max
Unit Test
Condition
V
F1
-- --
0.27 I
F
= 100 mA
V
F2
-- -- 0.36
I
F
= 700 mA
Forward voltage
V
F3
-- -- 0.42
V
I
F
= 1 A,
I
R1
-- -- 100
V
R
= 5 V
Reverse current
I
R2
-- --
1000
A
V
R
= 30 V
Capacitance
C
-- -- 40
pF
V
R
= 10 V, f = 1 MHz
-- 100
Ceramics
board
*
1
Thermal resistance
Rth(j-a)
-- 200
--
C/W
Glass epoxy board *
2
Notes: 1. Ceramics board
1.0
50h
50w0.8t
Unit: mm
2.0
0.3
0.5
2.0
2.0
2.
Glass
epoxy
board
1.0
50h
50w0.8t
Unit: mm
6.0
0.5
6.0
0.3
2.0
3. TURP is the structure which radiates heat to a substrate, please perform mounting to a substrate by reflow.
HRV103A
Rev.1.00 Oct 12, 2004 page 3 of 5
Main Characteristics
0
10
20
30
40
0
0.2
0.4
0.6
0.8
1.0
Pulse test
Forward voltage V
F
(V)
Fig.1 Forward current vs. Forward voltage
10
3
10
2
10
5
10
4
1.0
10
6
10
1
10
1
10
6
10
3
10
2
10
5
10
4
Reverse voltage V
R
(V)
Fig.2 Reverse current vs. Reverse voltage
Reverse current I
R
(A)
Forward current I
F
(A)
Ta = 25
C
Pulse test
Ta = 75
C
Ta = 25
C
1.0
10
10
1.0
0.1
100
f=1MHz
Pulse test
Reverse voltage V
R
(V)
Fig.3 Capacitance vs. Reverse voltage
Capacitance C (pF)
Ta = 75
C
HRV103A
Rev.1.00 Oct 12, 2004 page 4 of 5
0
50
100
25
75
125
0
0.8
0.4
1.2
1.0
0.6
0.2
Average rectified current I
O
(A)
Ambient temperature Ta (
C
)
Fig.6 Average rectified current vs. Ambient temperature
D=1/2
V
R
=V
RRM
/3
Tj =125
C
Rth(j
-a)=100C/W
D=1/6
D=1/3
-25
sin(
=180)
DC
1.5
0
Reverse power dissipation Pd (W)
Fig.5 Reverse power dissipation vs. Reverse voltage
Reverse voltage V
R
(V)
Fig.4 Forward power dissipation vs. Forward current
Forward current I
F
(A)
Forward power dissipation Pd (W)
DC
1.0
0
0.1
0.6
D=1/3
0.2
0.5
0.8
D=1/2
sin(
=180)
0.5
t
T
0A
Tj = 25
C
D = --
T
t
0.3
0.4
0.7
D=1/6
5
4
3
2
40
30
20
10
0
0
6
t
T
0V
D = --
T
t
Tj = 125
C
D=1/3
D=1/2
7
8
sin(
=180)
D=5/6
1
HRV103A
Rev.1.00 Oct 12, 2004 page 5 of 5
Package Dimensions
Package Code
JEDEC
JEITA
Mass (reference value)
TURP
--
--
0.004 g
1.90 0.1
2.50 0.10
0.60 0.05
1.25
0.55 Max
0.13 0.05
Unit: mm
0.80 0.05
+ 0.20 0.10
PDF 
ZIP