Rev.1.00, Mar.11.2004, page 1 of 6
HZS-N Series
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
REJ03G0185-0100Z
(Previous: ADE-208-124)
Rev.1.00
Mar.11.2004
Features
Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized
power supply, etc.
Wide spectrum from 1.88 V through 38.52 V of zener voltage provide flexible application.
Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No.
Mark
Package Code
HZS-N Series
Type No.
MHD
Pin Arrangement
1. Cathode
2. Anode
Cathode band
Type No.
1
2
2
B
7.5
HZS-N Series
Rev.1.00, Mar.11.2004, page 2 of 6
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol
Value
Unit
Power dissipation
Pd
400
mW
Junction temperature
Tj
200
C
Storage temperature
Tstg
-
55 to +175
C
Electrical Characteristics
(Ta = 25C)
Zener Voltage
Reverse Current
Dynamic Resistance
V
Z
(V)*
1
Test
Condition
I
R
(
A)
Test
Condition
r
d
(
)
Test
Condition
Type
Grade
Min Max I
Z
(mA)
Max
V
R
(V)
Max
I
Z
(mA)
B1 1.88
2.10
HZS2.0N
B2 2.02
2.20
5 120 0.5 100 5
B1 2.12
2.30
HZS2.2N
B2 2.22
2.41
5 120 0.7 100 5
B1 2.33
2.52
HZS2.4N
B2 2.43
2.63
5 120 1.0 100 5
B1 2.54
2.75
HZS2.7N
B2 2.69
2.91
5 100 1.0 110 5
B1 2.85
3.07
HZS3.0N
B2 3.01
3.22
5 50 1.0
120
5
B1 3.16
3.38
HZS3.3N
B2 3.32
3.53
5 20 1.0
120
5
B1 3.47
3.68
HZS3.6N
B2 3.62
3.83
5 10 1.0
120
5
B1 3.77
3.98
HZS3.9N
B2 3.92
4.14
5 5 1.0
120
5
B1 4.05
42.6
B2 4.20
4.40
HZS4.3N
B3 4.34
4.53
5 5 1.0
120
5
B1 4.47
4.65
B2 4.59
4.77
HZS4.7N
B3 4.71
4.91
5 5 1.0
100
5
B1 4.85
5.03
B2 4.97
5.18
HZS5.1N
B3 5.12
5.35
5 5 1.5
70 5
B1 5.29
5.52
B2 5.46
5.70
HZS5.6N
B3 5.64
5.88
5 5 2.5
40 5
B1 5.81
6.06
B2 5.99
6.24
HZS6.2N
B3 6.16
6.40
5 5 3.0
30 5
B1 6.32
6.59
B2 6.52
6.79
HZS6.8N
B3 6.70
6.97
5 2 3.5
25 5
Note: 1. Tested with pulse (P
W
= 40 ms)
HZS-N Series
Rev.1.00, Mar.11.2004, page 3 of 6
(Ta = 25C)
Zener Voltage
Reverse Current
Dynamic Resistance
V
Z
(V)*
1
Test
Condition
I
R
(
A)
Test
Condition
r
d
(
)
Test
Condition
Type
Grade
Min Max I
Z
(mA)
Max
V
R
(V)
Max
I
Z
(mA)
B1 6.88
7.19
B2 7.11
7.41
HZS7.5N
B3 7.33
7.64
5 0.5 4.0 25 5
B1 7.56
7.90
B2 7.82
8.15
HZS8.2N
B3 8.07
8.41
5 0.5 5.0 20 5
B1 8.33
8.70
B2 8.61
8.99
HZS9.1N
B3 8.89
9.29
5 0.5 6.0 20 5
B1 9.19
9.59
B2 9.48
9.90
HZS10N
B3 9.82
10.30
5 0.2 7.0 20 5
B1 10.18
10.63
B2 10.50
10.95
HZS11N
B3 10.82
11.26
5 0.2 8.0 20 5
B1 11.13
11.63
B2 11.50
11.92
HZS12N
B3 11.80
12.30
5 0.2 9.0 25 5
B1 12.18
12.71
B2 12.59
13.16
HZS13N
B3 13.03
13.62
5 0.2 10 25 5
B1 13.48
14.09
B2 13.95
14.56
HZS15N
B3 14.42
15.02
5 0.2 11 25 5
B1 14.87
15.50
B2 15.33
15.96
HZS16N
B3 15.79
16.50
5 0.2 12 25 5
B1 16.34
17.06
B2 16.90
17.67
HZS18N
B3 17.51
18.30
5 0.2 13 30 5
B1 18.14
18.96
B2 18.80
19.68
HZS20N
B3 19.52
20.45
5 0.2 15 30 5
B1 20.23
21.08
B2 20.76
21.65
B3 21.22
22.09
HZS22N
B4 21.68
22.61
5 0.2 17 30 5
B1 22.26
23.12
B2 22.75
23.73
B3 23.29
24.27
HZS24N
B4 23.81
24.81
5 0.2 19 35 5
B1 24.26
25.52
B2 24.97
26.26
B3 25.63
26.95
HZS27N
B4 26.29
27.64
5 0.2 21 45 5
Note: 1. Tested with pulse (P
W
= 40 ms)
HZS-N Series
Rev.1.00, Mar.11.2004, page 4 of 6
(Ta = 25C)
Zener Voltage
Reverse Current
Dynamic Resistance
V
Z
(V)*
1
Test
Condition
I
R
(
A)
Test
Condition
r
d
(
)
Test
Condition
Type
Grade
Min Max I
Z
(mA)
Max
V
R
(V)
Max
I
Z
(mA)
B1 26.99
28.39
B2 27.70
29.13
B3 28.36
29.82
HZS30N
B4 29.02
30.51
5 0.2 23 55 5
B1 29.68
31.22
B2 30.32
31.88
B3 30.90
32.50
HZS33N
B4 31.49
33.11
5 0.2 25 65 5
B1 32.14
33.79
B2 32.79
34.49
B3 33.40
35.13
HZS36N
B4 34.01
35.77
5 0.2 27 75 5
B1 34.68
36.47
B2 35.36
37.19
B3 36.00
37.85
HZS39N
B4 36.63
38.52
5 0.2 30 85 5
Notes: 1. Tested with pulse (P
W
= 40 ms).
2. Type No. is as follows: HZS2.0NB1, HZS2.0NB2, HZS39NB4.
HZS-N Series
Rev.1.00, Mar.11.2004, page 5 of 6
Main Characteristic
0
5
10 15 20 25 30 35 40
50
40
30
20
10
0
-
10
-
20
-
30
-
40
-
50
200
150
100
50
0
2.5 mm
3 mm
l
l
=
5 mm
l
=
10 mm
(Publication value)
Zener
V
oltage
T
emper
ature Coefficient
Z
(mV/
C)
%/
C
mV/
C
Fig.2 Temperature Coefficient vs. Zener voltage
Zener Voltage V
Z
(V)
0.10
0.08
0.06
0.04
0.02
-
0.02
-
0.04
-
0.06
-
0.08
-
0.10
Zener
V
oltage
T
emper
ature Coefficient
Z
(%/
C)
500
400
300
200
100
0
Power Dissipation Pd (mW)
Printed circuit board
100
180
1.6t mm
Material: paper phenol
Fig.3 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (
C)
0
10
8
6
4
2
0
4
8
12
16
20
24
28
32
40
36
HZS13N
HZS15N
HZS18N
HZS2.0N
HZS20N
HZS22N
HZS36N
HZS39N
HZS30N
HZS2.4N
HZS3.0N HZS3.6N
HZS4.3N HZS5.1N HZS6.2N
HZS7.5N HZS8.2N HZS9.1N HZS10N HZS11N HZS12N
HZS16N
HZS24N
HZS27N
HZS33N
HZS6.8N
0
Fig.1 Zener current vs. Zener voltage
Zener Voltage V
Z
(V)
Zener Current I
Z
(mA)
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