ChipFind - документация

Электронный компонент: HZS333

Скачать:  PDF   ZIP
Rev.3.00, Mar.11.2004, page 1 of 6
HZS Series
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
REJ03G0184-0300Z
(Previous: ADE-208-120B)
Rev.3.00
Mar.11.2004
Features
Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized
power supply, etc.
Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.
Suitable for 5mm-pitch high speed automatic insertion.

Ordering Information
Type No.
Mark
Package Code
HZS Series
Type No.
MHD
Pin Arrangement
1. Cathode
2. Anode
Cathode band
Type No.
1
2
B
2
7
HZS Series
Rev.3.00, Mar.11.2004, page 2 of 6
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol
Value
Unit
Power dissipation
Pd
400
mW
Junction temperature
Tj
200
C
Storage temperature
Tstg
-
55 to +175
C

Electrical Characteristics
(Ta = 25C)
Zener Voltage
Reverse Current
Dynamic Resistance

V
Z
(V)*
1
Test
Condition

I
R
(
A)
Test
Condition

r
d
(
)
Test
Condition



Type



Grade
Min Max
I
Z
(mA)
Max
V
R
(V)
Max
I
Z
(mA)
A1 1.6 1.8
A2 1.7 1.9
A3 1.8 2.0
5 25 0.5
100
5
B1 1.9 2.1
B2 2.0 2.2
B3 2.1 2.3
C1 2.2 2.4
C2 2.3 2.5
HZS2
C3 2.4 2.6
5 5 0.5
100
5
A1 2.5 2.7
A2 2.6 2.8
A3 2.7 2.9
B1 2.8 3.0
B2 2.9 3.1
B3 3.0 3.2
C1 3.1 3.3
C2 3.2 3.4
HZS3
C3 3.3 3.5
5 5 0.5
100
5
A1 3.4 3.6
A2 3.5 3.7
A3 3.6 3.8
B1 3.7 3.9
B2 3.8 4.0
B3 3.9 4.1
C1 4.0 4.2
C2 4.1 4.3
HZS4
C3 4.2 4.4
5 5 1.0
100
5
A1 4.3 4.5
A2 4.4 4.6
A3 4.5 4.7
B1 4.6 4.8
B2 4.7 4.9
HZS5
B3 4.8 5.0
5 5 1.5
100
5
Note: 1. Tested with DC.
HZS Series
Rev.3.00, Mar.11.2004, page 3 of 6
(Ta = 25C)
Zener Voltage
Reverse Current
Dynamic Resistance

V
Z
(V)*
1
Test
Condition

I
R
(
A)
Test
Condition

r
d
(
)
Test
Condition



Type



Grade
Min Max
I
Z
(mA)
Max
V
R
(V)
Max
I
Z
(mA)
C1 4.9 5.1
C2 5.0 5.2
HZS5
C3 5.1 5.3
5 5 1.5
100
5
A1 5.2 5.5
A2 5.3 5.6
A3 5.4 5.7
B1 5.5 5.8
B2 5.6 5.9
B3 5.7 6.0
C1 5.8 6.1
C2 6.0 6.3
HZS6
C3 6.1 6.4
5 5 2.0
40 5
A1 6.3 6.6
A2 6.4 6.7
A3 6.6 6.9
B1 6.7 7.0
B2 6.9 7.2
B3 7.0 7.3
C1 7.2 7.6
C2 7.3 7.7
HZS7
C3 7.5 7.9
5 1 3.5
15 5
A1 7.7 8.1
A2 7.9 8.3
A3 8.1 8.5
B1 8.3 8.7
B2 8.5 8.9
B3 8.7 9.1
C1 8.9 9.3
C2 9.1 9.5
HZS9
C3 9.3 9.7
5 1 5.0
20 5
A1 9.5 9.9
A2 9.7 10.1
A3 9.9 10.3
B1 10.2 10.6
B2 10.4 10.8
B3 10.7 11.1
C1 10.9 11.3
C2 11.1 11.6
HZS11
C3 11.4 11.9
5 1 7.5
25 5
A1 11.6 12.1
A2 11.9 12.4
A3 12.2 12.7
B1 12.4 12.9
B2 12.6 13.1
HZS12
B3 12.9 13.4
5 1 9.5
35 5
Note: 1. Tested with DC.
HZS Series
Rev.3.00, Mar.11.2004, page 4 of 6
(Ta = 25C)
Zener Voltage
Reverse Current
Dynamic Resistance

V
Z
(V)*
1
Test
Condition

I
R
(
A)
Test
Condition

r
d
(
)
Test
Condition



Type



Grade
Min Max
I
Z
(mA)
Max
V
R
(V)
Max
I
Z
(mA)
C1 13.2 13.7
C2 13.5 14.0
HZS12
C3 13.8 14.3
5 1 9.5
35 5
1 14.1
14.7
2 14.5
15.1
HZS15
3 14.9
15.5
5 1 11.0
40 5
1 15.3
15.9
2 15.7
16.5
HZS16
3 16.3
17.1
5 1 12.0
45 5
1 16.9
17.7
2 17.5
18.3
HZS18
3 18.1
19.0
5 1 13.0
55 5
1 18.8
19.7
2 19.5
20.4
HZS20
3 20.2
21.1
2 1 15.0
60 2
1 20.9
21.9
2 21.6
22.6
HZS22
3 22.3
23.3
2 1 17.0
65 2
1 22.9
24.0
2 23.6
24.7
HZS24
3 24.3
25.5
2 1 19.0
70 2
1 25.2
26.6
2 26.2
27.6
HZS27
3 27.2
28.6
2 1 21.0
80 2
1 28.2
29.6
2 29.2
30.6
HZS30
3 30.2
31.6
2 1 23.0
100
2
1 31.2
32.6
2 32.2
33.6
HZS33
3 33.2
34.6
2 1 25.0
120
2
1 34.2
35.7
2 35.3
36.8
HZS36
3 36.4
38.0
2 1 27.0
140
2
Notes: 1. Tested with DC.
2. Type No. is as follows; HZS2B1, HZS2B2, HZS36-3.
HZS Series
Rev.3.00, Mar.11.2004, page 5 of 6
Main Characteristic
0
5
10 15 20 25 30 35 40
50
40
30
20
10
0
-
10
-
20
-
30
-
40
-
50
0.10
0.08
0.06
0.04
0.02
0
-
0.02
-
0.04
-
0.06
-
0.08
-
0.10
mV/
C
5
10
15
20
25
30
35
40
0
HZS2B2
HZS9B2
HZS12B2
HZS16-2
HZS4B2 HZS6B2
HZS20-2
HZS24-2
HZS30-2
HZS36-2
500
400
300
200
100
200
150
100
50
0
0
2.5 mm
3 mm
Printed circuit board
100 180 1.6t mm
Material: paper phenol
l
l = 5 mm
l = 10 mm
(Publication value)
Zener Current I
Z
(A)
Fig.1 Zener current vs. Zener voltage
Zener Voltage V
Z
(V)
10
5
10
6
10
4
10
3
10
2
10
7
10
8
Zener
V
oltage
T
e
mper
ature Coefficient
Z
(mV/
C)
Zener
V
oltage
T
e
mper
ature Coefficient
Z
(%/
C)
Fig.2 Temperature Coefficient vs. Zener voltage
Zener Voltage V
Z
(V)
%/
C
Fig.3 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (
C)
Power Dissipation Pd (mW)
HZS Series
Rev.3.00, Mar.11.2004, page 6 of 6
Package Dimensions
26.0 Min
2.4 Max
2.0
0.4
26.0 Min
Package Code
JEDEC
JEITA
Mass (reference value)
MHD
Conforms
--
0.084 g
As of January, 2003
Unit: mm
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
http://www.renesas.com
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501
Renesas Technology Europe Limited.
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom
Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900
Renesas Technology Europe GmbH
Dornacher Str. 3, D-85622 Feldkirchen, Germany
Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11

Renesas Technology Hong Kong Ltd.
7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2375-6836

Renesas Technology Taiwan Co., Ltd.
FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
RENESAS SALES OFFICES
2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .1.0