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Электронный компонент: HZS6LA1

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Rev.2.00, Jan.06.2003, page 1 of 6
HZS-L Series
Silicon Epitaxial Planar Zener Diode for
Low Noise Application
REJ03G0166-0200Z
(Previous: ADE-208-121A)
Rev.2.00
Jan.06.2004
Features
Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series.
Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
stabilized power supply, etc.
Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.
Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No.
Mark
Package Code
HZS-L Series
Type No.
MHD
Pin Arrangement
1. Cathode
2. Anode
Cathode band
Type No.
1
2
B
2
7
HZS-L Series
Rev.2.00, Jan.06.2003, page 2 of 6
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol
Value
Unit
Power dissipation
Pd
400
mW
Junction temperature
Tj
200
C
Storage temperature
Tstg
55 to +175
C
Electrical Characteristics
(Ta = 25C)
Zener Voltage
Reverse Current
Dynamic Resistance

V
Z
(V)
*
1
Test
Condition

I
R
(
A)
Test
Condition

r
d
(
)
Test
Condition
Type Grade
Min Max I
Z
(mA)
Max
V
R
(V)
Max
I
Z
(mA)
HZS6L
A1 5.2
5.5
0.5 1
2.0 150
0.5
A2
5.3
5.6
A3
5.4
5.7
B1
5.5
5.8
80
0.5
B2
5.6
5.9
B3
5.7
6.0
C1
5.8
6.1
60
0.5
C2
6.0
6.3
C3
6.1
6.4
HZS7L
A1
6.3
6.6
0.5
1
3.5
60
0.5
A2
6.4
6.7
A3
6.6
6.9
B1
6.7
7.0
B2
6.9
7.2
B3
7.0
7.3
C1
7.2
7.6
C2
7.3
7.7
C3
7.5
7.9
Note: 1. Tested with DC.
HZS-L Series
Rev.2.00, Jan.06.2003, page 3 of 6
Zener Voltage
Reverse Current
Dynamic Resistance

V
Z
(V)
*
1
Test
Condition

I
R
(
A)
Test
Condition

r
d
(
)
Test
Condition
Type Grade
Min Max I
Z
(mA)
Max
V
R
(V)
Max
I
Z
(mA)
HZS9L
A1
7.7
8.1
0.5
1
6.0
60
0.5
A2
7.9
8.3
A3
8.1
8.5
B1
8.3
8.7
B2
8.5
8.9
B3
8.7
9.1
C1
8.9
9.3
C2
9.1
9.5
C3
9.3
9.7
HZS11L
A1
9.5
9.9
0.5 1
8.0 80
0.5
A2
9.7
10.1
A3
9.9
10.3
B1
10.2
10.6
B2
10.4
10.8
B3
10.7
11.1
C1
10.9
11.3
C2
11.1
11.6
C3
11.4
11.9
HZS12L
A1
11.6
12.1
0.5
1
10.5
80
0.5
A2
11.9
12.4
A3
12.2
12.7
B1
12.4
12.9
B2
12.6
13.1
B3
12.9
13.4
C1
13.2
13.7
C2
13.5
14.0
C3
13.8
14.3
HZS15L
1
14.1
14.7
0.5
1
13.0
80
0.5
2
14.5
15.1
3
14.9
15.5
HZS16L
1
15.3
15.9
0.5
1
14.0
80
0.5
2
15.7
16.5
3
16.3
17.1
Note: 1. Tested with DC.
HZS-L Series
Rev.2.00, Jan.06.2003, page 4 of 6
Zener Voltage
Reverse Current
Dynamic Resistance

V
Z
(V)
*
1
Test
Condition

I
R
(
A)
Test
Condition

r
d
(
)
Test
Condition
Type Grade
Min Max I
Z
(mA)
Max
V
R
(V)
Max
I
Z
(mA)
HZS18L
1
16.9
17.7
0.5
1
15.0
80
0.5
2
17.5
18.3
3
18.1
19.0
HZS20L 1
18.8
19.7
0.5
1
18.0
100
0.5
2
19.5
20.4
3
20.2
21.1
HZS22L
1
20.9
21.9
0.5
1
20.0
100
0.5
2
21.6
22.6
3
22.3
23.3
HZS24L
1
22.9
24.0
0.5
1
22.0
120
0.5
2
23.6
24.7
3
24.3
25.5
HZS27L
1
25.2
26.6
0.5
1
24.0
150
0.5
2
26.2
27.6
3
27.2
28.6
HZS30L
1
28.2
29.6
0.5
1
27.0
200
0.5
2
29.2
30.6
3
30.2
31.6
HZS33L
1
31.2
32.6
0.5
1
30.0
250
0.5
2
32.2
33.6
3
33.2
34.6
HZS36L
1
34.2
35.7
0.5
1
33.0
300
0.5
2
35.3
36.8
3
36.4
38.0
Notes: 1. Tested with DC.
2. Type No. is as follows; HZS6A1L, HZS6A2L, HZS36-3L
HZS-L Series
Rev.2.00, Jan.06.2003, page 5 of 6
Main Characteristic
0
5
10 15 20 25 30 35 40
50
40
30
20
10
0
-
10
-
20
-
30
-
40
-
50
5
10
15
20
25
30
35
40
0
200
150
100
50
0
2.5 mm
3 mm
l
l
=
5 mm
l
=
10 mm
(Publication value)
HZS6B2L
HZS16-2L
HZS9B2L
HZS12B2L
HZS20-2L
HZS24-2L
HZS30-2L
HZS36-2L
Zener Current I
Z
(A)
10
5
10
6
10
4
10
3
10
2
10
7
10
8
Fig.1 Zener current vs. Zener voltage
Zener Voltage V
Z
(V)
Zener
V
oltage
T
emper
ature Coefficient
Z
(mV/
C)
%/
C
mV/
C
Fig.2 Temperature Coefficient vs. Zener voltage
Zener Voltage V
Z
(V)
0.10
0.08
0.06
0.04
0.02
-
0.02
-
0.04
-
0.06
-
0.08
-
0.10
Zener
V
oltage
T
emper
ature Coefficient
Z
(%/
C)
500
400
300
200
100
0
Power Dissipation Pd (mW)
Printed circuit board
100
180
1.6t mm
Quality: paper phenol
Fig.3 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (
C)
0
HZS-L Series
Rev.2.00, Jan.06.2003, page 6 of 6
Package Dimensions
26.0 Min
2.4 Max
2.0
0.4
26.0 Min
Package Code
JEDEC
JEITA
Mass (reference value)
MHD
Conforms
--
0.084 g
As of January, 2003
Unit: mm

2003. Renesas Technology Corp., All rights reserved. Printed in Japan.
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