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Электронный компонент: HZU3BLL

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Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
Keep safety first in your circuit designs!
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and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
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Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
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HZU-LL Series
Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise
ADE-208-236C (Z)
Rev.3
Dec. 2002
Features
Low noise voltage (approximately 1/3 to 1/10 lower than the HZU series).
Temperature coefficient is approximately 1/2 lower than the HZU series.
Vz-Iz characteristics are semi-logarithmic linear from Iz=1nA to 1mA.
Ultra small Resin Package(URP) is suitable for surface mount design.
Ordering Information
Type No.
Mark
Package Code
HZU-LL Series
Let to Mark Code
URP
Pin Arrangement
Cathode mark
Mark
1
2
1. Cathode
2. Anode
HZU-LL Series
Rev.3, Dec. 2002, page 2 of 2
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol
Value
Unit
Power dissipation
Pd
*
1
150 mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
-55 to +150
C
Note: 1. See
Fig.3.
Electrical Characteristics
(Ta = 25C)
Zener Voltage
Reverse Current Dynamic Resistance
Linearity



V
Z
(V) *
1
I
R
(nA) Z
ZT
(
) Z
ZK
(k
) *
2



V
Z
(V) *
3
Type Grade
Min
Max
I
Z
(mA) Max
V
R
(V)
Max
I
ZT
(mA) Typ
I
ZK
(



A) Max
HZU2LL
A
1.6
2.0
0.5
100
0.5
350
0.5
(1.2)
50
0.5
B
1.9
2.3
C
2.2
2.6
HZU3LL
A
2.5
2.9
0.5
100
1.0
360
0.5
(1.2)
50
0.5
B
2.8
3.2
C
3.1
3.5
HZU4LL
A
3.4
3.8
0.5
100
2.0
370
0.5
(1.5)
50
0.5
B
3.7
4.1
C
4.0
4.4
HZU5LL
A
4.3
4.7
0.5
100
3.0
380
0.5
(1.5)
50
0.5
B
4.6
5.0
C
4.9
5.3
Notes: 1. Tested with DC.
2.
Reference
only.
3.
V
Z
= V
Z
(I
Z
= 0.5 mA) - V
Z
(I
z
= 0.05 mA)
4. Type No. is as follows; HZU2ALL, HZU2BLL,
... HZU5CLL.
Mark Code
Type
Grade
MarK No.
Type
Grade
Mark No.
A 2A
A 4A
B 2B
B 4B
HZU2LL
C 2C
HZU4LL
C 4C
A 3A
A 5A
B 3B
B 5B
HZU3LL
C 3C
HZU5LL
C 5C
HZU-LL Series
Rev.3, Dec. 2002, page 3 of 3
Main Characteristic
0
1
2
3
4
5
6
7
8
HZU2LL
HZU3LL
HZU4LL
HZU5LL
1
2
3
4
5
6
-0.5
-1.0
-1.5
-0.02
-0.03
-0.04
-0.01
-0.05
0
-2.0
%/
C
mV/
C
250
200
150
100
50
200
150
100
50
0
0
Printed circuit board
15 20 1.6t mm
Material: Glass Epoxy Resin
+Cu Foil
1.5mm
0.8mm
Cu Foil
0.8mm
Zener Current I
Z
(A)
Zener Voltage V
Z
(V)
Fig.1 Zener current vs. Zener voltage
Ambient Temperature Ta (
C)
Fig.3 Power Dissipation vs. Ambient Temperature
Power Dissipation Pd (mW)
10
4
10
2
10
3
10
5
10
6
10
7
10
8
Zener V
oltage
T
emper
ature Coefficient
Z
(mV/

C)
Fig.2 Temperature Coefficient vs. Zener voltage
Zener Voltage V
Z
(V)
Zener V
oltage
T
emper
ature Coefficient
Z
(%/

C)