ChipFind - документация

Электронный компонент: RF2320PCBA

Скачать:  PDF   ZIP
3-27
3
LI
N
E
A
R
C
A
TV
A
M
P
L
IF
IE
R
S
Preliminary
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
NC
NC
GND
GND
GND
RF IN
NC
NC
NC
NC
RF OUT
GND
GND
NC
NC
NC
RF2320
LINEAR GENERAL PURPOSE AMPLIFIER
CATV Distribution Amplifiers
Cable Modems
Broadband Gain Blocks
Laser Diode Driver
Return Channel Amplifier
Base Stations
The RF2320 is a general purpose, low-cost, high-linearity
RF amplifier IC. The device is manufactured on a Gallium
Arsenide process and is featured in an SOP-16 batwing
package. It has been designed for use as an easily cas-
cadable 75
gain block with a noise figure of less than
2 dB. Gain flatness better than 0.5dB from 5MHz to
1000 MHz, and high linearity make this part ideal for cable
TV applications. Other applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 2500MHz.
The device is self-contained with 75
input and output
impedances providing 2:1 VSWR matching. For higher
input and output return losses, see the evaluation sche-
matic.
5MHz to 2500MHz Operation
Internally Matched Input and Output
16dB Small Signal Gain
1.6dB Noise Figure
+22dBm Output Power
Single 6V to 9V Positive Power Supply
RF2320
Linear General Purpose Amplifier
RF2320 PCBA
Fully Assembled Evaluation Board
3
Rev A8 010417
0.035
0.016
0.010
0.008
8 MAX
0 MIN
0.021
0.014
0.392
0.386
0.158
0.150
0.244
0.230
0.069
0.064
0.050
0.060
0.054
-A-
0.009
0.004
Package Style: Standard Batwing
Preliminary
3-28
RF2320
Rev A8 010417
3
LI
N
E
A
R
C
A
TV
A
M
P
L
IF
IE
R
S
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current
175
mA
Device Voltage
9
V
Input RF Power
+10
dBm
Output Load VSWR
20:1
Ambient Operating Temperature
-40 to +85
C
Storage Temperature
-40 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall (50
)
T = 25 C, V
DD
= 7V, 50
System, P
IN
= -
10dBm
Frequency Range
5 to 2500
MHz
3dB Bandwidth
Input VSWR
2:1
Appropriate values for the DC blocking
capacitor and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Output VSWR
1.3:1
See note for Input VSWR.
Gain
15
dB
At 100MHz
16
dB
At 2000MHz
Gain Flatness
+/-1
dB
From 5MHz to 2500MHz
Noise Figure
1.8
dB
From 5MHz to 900MHz
2.6
dB
From 900MHz to 2500MHz,
Output IP
3
35
dBm
At 100MHz
36
dBm
At 1000MHz
Output IP
2
39.6
dBm
At 1000MHz
Output P
1dB
21.5
dBm
At 100MHz
22.5
dBm
At 1000MHz
18
dBm
At 2000MHz
Reverse Isolation
20
dB
T = 25 C, V
DD
= 9V, 50
System, P
IN
= -
10dBm
Gain
16.5
dB
At 100MHz
16.7
dB
At 1000MHz
Noise Figure
1.8
dB
From 5MHz to 900MHz,
2.6
dB
From 900MHz to 2500MHz,
Output IP
3
36
dBm
At 100MHz
36.3
dBm
At 1000MHz
Output IP
2
39.8
dBm
At 1000MHz
Output P
1dB
23
dBm
At 100MHz
24.7
dBm
At 1000MHz
19.5
dBm
At 2000MHz
Power Supply
Supply Voltage (V
DD
)
6
7
9
V
Operating Current Range
75
85
100
mA
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Preliminary
3-29
RF2320
Rev A8 010417
3
LI
N
E
A
R
C
A
TV
A
M
P
L
IF
IE
R
S
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall (75
)
T= 25
o
C, V
DD
=7V, 75
System, P
IN
=-8dBm
Frequency Range
5 to 2500
MHz
3dB Bandwidth
Input VSWR
1.6:1
Appropriate values for the output DC block-
ing capacitor and bias inductor are required
to maintain this VSWR over the intended
operating frequency range.
Output VSWR
1.3:1
See note for input VSWR.
Gain
15
dB
At 500MHz
Gain Flatness
+1- 0.5
dB
5MHz to 1000MHz
Output IP
3
34.6
dBm
At 10MHz, Delta F1 and F2 = 1MHz
36.1
dBm
At 500MHz
33.1
dBm
At 1000MHz
Output IP
2
49.9
dBm
At 100MHz, Delta F1 and F2 = 156MHz
48.5
dBm
At 1000MHz
Output IP
1dB
21
dBm
At 10MHz
23
dBm
At 500MHz
22
dBm
At 1000MHz
110 Channels
10dBmV per channel, flat, at the input of the
amplifier; V
CC
=7V, I
CC
=75mA
XMOD
-71
dBc
At 55.25MHz
-72
dBc
At 331.25MHz
-72
dBc
At 547.25MHz
CTB
-79
dBc
At 55.25MHz
-78
dBc
At 331.25MHz
-78
dBc
At 547.25MHz
CSO+1.25MHz
-91
dBc
At 55.25MHz
-58
dBc
At 331.25MHz
-56
dBc
At 547.25MHz
CSO- 1.25MHz
-51
dBc
At 55.25MHz
-53
dBc
At 331.25MHz
-58
dBc
At 547.25MHz
CNR
+65
dB
At 55.25MHz
+64
dB
At 331.25MHz
+64
dB
At 547.25MHz
Power Supply
Supply Voltage (V
DD
)
6
7
9
V
Operating Current Range
75
85
100
mA
Preliminary
3-30
RF2320
Rev A8 010417
3
LI
N
E
A
R
C
A
TV
A
M
P
L
IF
IE
R
S
Pin
Function
Description
Interface Schematic
1
NC
No connection. This pin should be connected to the ground plane.
2
NC
Same as pin 1.
3
GND
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance. Each ground pin should
have a via to the ground plane.
4
GND
Same as pin 3.
5
GND
Same as pin 3.
6
RF IN
RF input pin. This pin is not internally DC blocked. A DC blocking
capacitor suitable for the frequency of operation is required if DC is
present from the previous stage. The gate voltage is nominally 0V but
can be raised externally to increase the bias level. This will increase the
current drain but improve linearity.
7
NC
Same as pin 1.
8
NC
Same as pin 1.
9
NC
Same as pin 1.
10
NC
Same as pin 1.
11
NC
Same as pin 1.
12
GND
Same as pin 3.
13
GND
Same as pin 3.
14
RF OUT
RF output and bias pin. Because DC is present on this pin, a DC block-
ing capacitor, suitable for the frequency of operation, should be used in
most applications. For biasing, only an RF choke is needed.
15
NC
Same as pin 1.
16
NC
Same as pin 1.
RF OUT
RF IN
Preliminary
3-31
RF2320
Rev A8 010417
3
LI
N
E
A
R
C
A
TV
A
M
P
L
IF
IE
R
S
Application Schematic
1930-1990MHz Narrowband Operation
Application Schematic
869-894MHz Narrowband Operation
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
1.8 nH
22 pF
1.5 pF
22 pF
4.7 nH
22 pF
V
DD
100
150
1 nF
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
8.2 nH 100 pF
2 pF
100 pF
8.2 nH
3 pF
100 pF
V
DD
Preliminary
3-32
RF2320
Rev A8 010417
3
LI
N
E
A
R
C
A
TV
A
M
P
L
IF
IE
R
S
Evaluation Board Schematic - 50
(Download Bill of Materials from www.rfmd.com.)
Evaluation Board Schematic - 75
Drawing 2320400 Rev 1
J2
OUT
VDD
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
L2
1 uH
C2
10 nF
J1
IN
L1
4.7 nH
C1
10 nF
P1
1
2
3
GND
VDD
P1-1
GND
Drawing 2320401 Rev -
J2
OUT
C3
0.5 pF
P1-3
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
L3
390 nH
C4
1 nF
C1
1.5 pF
J1
IN
L2
390 nH
L1
10 nH
R4
10
C2
10 nF
P1
1
2
3
GND
GND
P1-3
VDD
NOTES:
J1 and J2 are 75
F connectors.
Preliminary
3-33
RF2320
Rev A8 010417
3
LI
N
E
A
R
C
A
TV
A
M
P
L
IF
IE
R
S
Evaluation Board Layout - 50
Board Size 1.5" x 1.5"
Board Thickness 0.031", Board Material FR-4
Evaluation Board Layout - 75
Board Thickness 0.062", Board Material FR-4
Preliminary
3-34
RF2320
Rev A8 010417
3
LI
N
E
A
R
C
A
TV
A
M
P
L
IF
IE
R
S
Gain, OIP3, and OIP2 versus Frequency
V
DD
-9V, Temp = 25C, Pin = -8dB
25.0
30.0
35.0
40.0
45.0
50.0
0.0
500.0
1000.0
1500.0
2000.0
Frequency (MHz)
OIP3,
O
IP2
(dBm)
14.0
14.5
15.0
15.5
16.0
16.5
17.0
Gain
(dB)
IP3
IP2
Gain
Gain, OIP3, and OIP2 versus Temperature
V
DD
-9V, Pin = -8dBm, Freq = 1000MHz
36.0
37.0
38.0
39.0
40.0
41.0
42.0
-60.0
-40.0
-20.0
0.0
20.0
40.0
60.0
80.0
100.0
Temperature (C)
OIP3,
O
IP2
(dBm)
16.0
16.1
16.2
16.3
16.4
16.5
16.6
16.7
16.8
16.9
17.0
Gain
(dB)
IP3
IP2
Gain
Gain, OIP3, and OIP2 versus Pin
V
DD
-9V, Temp = 25C, Freq = 1000MHz
28.0
30.0
32.0
34.0
36.0
38.0
40.0
42.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
Pin (dBm)
OIP3,
O
IP2
(dBm)
16.0
16.1
16.2
16.3
16.4
16.5
16.6
16.7
16.8
16.9
17.0
Gain
(dB)
IP3
IP2
Gain
Noise Figure versus Frequency Across Temperature
(V
CC
=7.0V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
200.0
400.0
600.0
800.0
1000.0
1200.0
1400.0
1600.0
Frequency (MHz)
Noise
Figure
(
dB)
-40degC
+25degC
+85degC
Noise Figure versus Frequency Across Temperature
(V
CC
=9.0V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
200.0
400.0
600.0
800.0
1000.0
1200.0
1400.0
1600.0
Frequency (MHz)
Noise
Figure
(
dB)
-40degC
+25degC
+85degC
Preliminary
3-35
RF2320
Rev A8 010417
3
LI
N
E
A
R
C
A
TV
A
M
P
L
IF
IE
R
S
0
1.0
1.0
-1.0
10.0
10.0
-1
0.0
5.0
5.0
-5
.0
2.0
2.
0
-2
.0
3.0
3.
0
-3
.0
4.0
4.0
-4
.0
0.2
0.2
-0.2
0.4
0.
4
-0
.4
0.6
0
.6
-0
.6
0.8
0
.8
-0
.8
50 Ohm, 8V - Return Loss
Swp Max
3000MHz
Swp Min
0.03MHz
S[2,2]
S[1,1]
Preliminary
3-36
RF2320
Rev A8 010417
3
LI
N
E
A
R
C
A
TV
A
M
P
L
IF
IE
R
S
0
1.0
1.0
-1.0
10.0
10.0
-1
0.0
5.0
5.0
-5
.0
2.0
2.
0
-2
.0
3.0
3.
0
-3
.0
4.0
4.0
-4
.0
0.2
0.2
-0.2
0.4
0.
4
-0
.4
0.6
0
.6
-0
.6
0.8
0
.8
-0
.8
75 Ohm, 8V - Return Loss
Swp Max
3000MHz
Swp Min
1MHz
S[2,2]
S[1,1]