4-623
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
RF IN
VREF
VBIAS
RF OUT
RF OUT
NC
NC
NC
1
2
3
4
8
7
6
5
PACKAGE BASE
GND
Bias
Circuit
RF3800
GaAs HBT PRE-DRIVER AMPLIFIER
Pre-Driver for 450MHz Basestation Amplifiers
PA Stage for Commercial Wireless Infrastructure
Class AB Operation for Cellular Radio and
Wireless Local Loop
The RF3800 is specifically designed for wireless infra-
structure applications in 450MHz. Using a highly reliable
GaAs HBT fabrication process, this high-performance
single-stage amplifier achieves high output power over a
broad frequency range. The RF3800 also provides excel-
lent efficiency and thermal stability through the use of a
thermally-enhanced surface-mount AlN package. Ease of
integration is accomplished through the incorporation of
an optimized evaluation board design provided to achieve
proper 50
operation. Various evaluation board bias con-
figurations are available to address a broad range of wire-
less infrastructure applications.
6W Output Power
High Linearity
45% Power-Added Efficiency
Thermally-Enhanced Packaging
Broadband Platform Design Approach
RF3800
GaAs HBT Pre-Driver Amplifier
RF3800PCBA-416 Fully Assembled Evaluation Board
0
Rev A1 040827
0.180
REF
0.198
0.200 REF
0.236
Pin 1
0.005 A
0.0025
-A-
0.024
0.156
0.025
R.008
0.028
TYP
0.020
7 PL
0.050
TYP
0.050
REF
0.0780
MAX
Package Style: AlN
Proposed
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