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Preliminary
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
8
7
6
5
RF IN
RF IN
PC
VCC
RF OUT
RF OUT
RF OUT
RF OUT
BIAS
CIRCUIT
PACKAGE BASE
GND
RF5187
LOW POWER LINEAR AMPLIFIER
2.14GHz UMTS Systems
Digital Communication Systems
PCS Communication Systems
Commercial and Consumer Systems
The RF5187 is a highly-linear, low-power amplifier IC. It
has been designed for use as the driver RF amplifier in
applications such as W-CDMA basestations. The RF5187
requires an input and output matching network and power
supply feed line. The device is manufactured on an
advanced Gallium Arsenide HBT process, and is pack-
aged in a 8-pin plastic package with a backside ground.
Single 3V to 6V Supply
10dBm to 20dBm Ultra Linear Output
Power
14dB Gain at 2.14GHz
Power Down Mode
800MHz to 2500MHz Operation
RF5187
Low Power Linear Amplifier
RF5187 PCBA
Fully Assembled Evaluation Board
2
Rev A1 011016
3.90
0.10
6.00
0.20
4.90
0.10
0.43
0.05
1.27
1.40
0.10
0.05
0.05
-A-
Exposed
Heat Sink
2.70
0.10
0.22
0.03
0.60
0.15
8 MAX
0 MIN
1.70
0.10
Dimensions in mm.
NOTES:
1. Shaded lead is pin 1.
2. Lead coplanarity - 0.10 with respect to datum "A".
Package Style: SOIC-8 Slug
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Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage (V
CC
)
-0.5 to +7.5
V
DC
Power Control Voltage (V
PC
)
-0.5 to +5V
V
DC Supply Current
450
mA
Input RF Power
+20
dBm
Output Load VSWR
20:1
Operating Ambient Temperature
-40 to +85
C
Storage Temperature
-40 to +100
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T = 25C, V
CC
= 5.0V, I
CC
= 240mA,
Freq= 2140MHz, P
OUT
=13dBm
Frequency Range
800
2500
MHz
Output Power
13
dBm
OP1dB
29
dBm
Small Signal Gain
13
15
dB
Input VSWR
1.5:1
With external matching network.
Two-Tone Specification
Output IP3
42
43
45
dBm
13dBm per tone.
Power Control
V
PC
2.7
3.1
3.7
V
To obtain 240mA idle current.
Power Control "OFF"
0.2
0.5
V
Threshold voltage at device input.
Power Supply
Power Supply Voltage
5
6
V
Supply Current
240
mA
Power Down Current
2
10
A
V
PC
= 0.2V
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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Pin
Function
Description
Interface Schematic
1
RF IN
RF input. This input is DC-coupled, so an external blocking capacitor is
required if this pin is connected to a DC path. An optimum match to
50
is obtained by providing an external series capacitor of 2.4pF and
then a shunt capacitor of 2.4pF. Those values are typical for 2140MHz;
other values may be required for other frequencies.
2
RF IN
Same as pin 1.
3
PC
Power control pin. For obtaining maximum performance, the voltage on
this pin can be used to set correct bias level. In a typical application this
is implemented by a feedback loop. The feedback can be based on the
actual supply current of the device (i.e. maintaining a fixed current
level), or it can be based on the RF output power level to maintain a
fixed RF power level (Automatic Level Control loop). A voltage of 0.5V
or lower brings the part into power down state.
4
VCC
Power supply pin for the bias circuits. External low frequency bypass
capacitors should be connected if no other low frequency decoupling is
nearby.
5
RF OUT
RF output and bias for the output stage. The power supply for the out-
put transistor needs to be supplied to this pin. This can be done
through a quarter-wavelength microstrip line that is RF-grounded at the
other end, or through an RF inductor that supports the required DC cur-
rents. Optimum load impedance is achieved by providing a shunt
capacitor of 1.8pF and a series capacitor of 3.3pF. Those values are
typical for 2140MHz; other values may be required for other frequen-
cies. Since there are several output pins available (which are internally
connected), one pin can be used for connecting the bias, another for
connecting a (third) harmonic trap filter, and the other pins for the RF
output.
6
RF OUT
Same as pin 5.
7
RF OUT
Same as pin 5.
8
RF OUT
Same as pin 5.
Pkg
Base
GND
Ground connection. The backside of the package should be connected
to the ground plane through a short path (i.e., vias under the device
may be required).
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Evaluation Board Schematic
2140MHz Operation
(Download Bill of Materials from www.rfmd.com.)
1
2
3
4
8
7
6
5
BIAS
CIRCUIT
PACKAGE BASE
C1
2.4 pF
J1
RF IN
P1
1
2
3
CON3
P1-1
VCC
P1-3
VPC
GND
C2
2.4 pF
50
strip
VPC
C6
1000 pF
VCC
C7
1000 pF
C8
1 uF
L1
4.7 nH
C5
33 pF
C3
1.8 pF
C3
3.3 pF
50
strip
J2
RF OUT
V
CC
= 5 V
f = 2140 MHz
P
OUT
= 13 dBm
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Evaluation Board Layout
Board Size 1.5" x 1.0"
Board Thickness 0.031", Board Material FR-4
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