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Электронный компонент: 1SS133

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1SS133
Diodes
Rev.B
1/3
Switching diode
1SS133

Applications
External dimensions (Unit : mm)
High speed switching
JEDEC : DO-34
ROHM : MSD
CATHODE BAND (YELLOW)
291
291
2.70.3
0.40.1
1.80.2

Features
1) Glass sealed envelope. (MSD)
2) High reliability.

Construction
Silicon epitaxial planar
Taping specifications (Unit : mm)
T-72 52.41.5
T-77 26.0+0.4
'
-0
5.00.5
0.5
0
50.40.4
0.3
G1
0.1
G2
0
H1
6.00.5
H2
5.00.5
I
0.5
L1-L2
0.6
t
3.2MIN
H2(6mm)BROWN
)201.5mm
(mm)
A
H2
H2
E
I
B
C
L2
L1
F
D
H1
t
H1
G2
G1
IVORY
BLUE
Mark
Standard dimension
value (mm)
cf : cumulativ e pitch tolerance with 20 pitch than 1.5mm












Absolute maximum ratings (Ta=25
C)







Symbol
Unit
V
RM
V
V
R
V
I
FM
mA
Io
mA
I
surge
mA
P
m
Tj
Tstg
W
verse voltage (DC)
80
orward voltage (repetitive peak)
400
Parameter
Limits
verse voltage (repetitive peak)
90
600
nction temperature
175
wer dissipation
300
erage rectified forward current
130
age temperature
-65 to 175
rge current (1s)
Re
Re
F
Av
Su
Po
Ju
Stor
Electrical characteristics (Ta=25
C)




Symbol
Min.
Typ.
Max.
Unit
Conditions
V
F
-
-
1.2
V
I
F
=100mA
I
R
-
-
0.5
A
V
R
=80V
Ct
-
-
2
pF
V
R
=0.5V , f=1MHz
Trr
-
-
4.0
ns
V
R
=6V,I
F
=10mA,RL=50
,Irr=1/10 I
R

Reverse recovery time
Parameter
orward voltage
verse current
apacitance between terminal
F
Re
C
1SS133
Diodes
Rev.B
2/3
Electrical characteristics curves (Ta=25
C)






FORWARD VOLTAGEVF(V)
VF-IF CHARACTERISTICS
FO
RW
ARD

CUR
R
ENT:IF
(m
A)
RE
VE
R
S
E

C
U
RRE
N
T
:
I
R(
n
A
)
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS
CA
P
A
CITA
NCE
BE
T
W
EEN
TERM
INAL
S:Ct(
p
F)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FOR
W
AR
D

V
O
LT
AG
E:VF(
m
V)
RE
VE
R
S
E

C
U
RRE
N
T
:
I
R(
n
A
)
IR DISPERSION MAP
C
A
PACIT
A
NCE
BETWEEN
TERM
INAL
S:Ct(
p
F
)
Ct DISPERSION MAP
IFSM DISRESION MAP
PEAK S
UR
GE
FOR
W
AR
D

C
U
RR
EN
T
:
I
F
SM
(
A
)
PEAK S
UR
GE
FOR
W
A
R
D

CU
RR
E
N
T:
I
F
SM
(
A
)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK S
UR
GE
FOR
W
A
R
D

CU
RR
E
N
T:
I
F
SM
(
A
)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSI
E
N
T
THAER
M
A
L

I
M
P
ED
ANCE:R
th
(
/
W
)
RE
VE
RSE

P
O
W
E
R
D
I
SSIP
A
TIO
N
:P
R
(W
)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
trr DISPERSION MAP
RE
SE
RVE

RE
CO
VE
RY
T
I
M
E
:
t
r
r
(
n
s
)
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
Ta=-25
Ta=125
Ta=75
Ta=25
Ta=175
0.1
1
10
100
1000
10000
100000
1000000
0
10
20
30
40
50
60
70
80
Ta=125
Ta=-25
Ta=25
Ta=75
Ta=175
0.1
1
10
0
10
20
30
f=1MHz
900
910
920
930
940
950
AVE:925.7mV
Ta=25
IF=100mA
n=30pcs
0
10
20
30
40
50
60
70
80
90
100
Ta=25
VR=80V
n=30pcs
AVE:21.3nA
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
AVE:0.803pF
Ta=25
VR=0.5V
f=1MHz
n=10pcs
0
5
10
15
20
8.3ms
Ifsm
1cyc
AVE:11.6A
0
0.5
1
1.5
2
2.5
3
AVE:1.46ns
Ta=25
VR=6V
IF=10mA
RL=50
n=10pcs
0
5
10
15
20
1
10
100
1
10
100
0.1
1
10
100
t
Ifsm
10
100
1000
0.001
0.01
0.1
1
10
100
1000
Rth(j-a)
Rth(j-c)
Rth(j-l)
1ms
IM=1mA
IF=50mA
300us
time
Mounted on epoxy board
0.00
0.10
0.20
0.00
0.05
0.10
0.15
0.20
8.3ms
Ifsm
1cyc
8.3ms
DC
D=1/2
Sin(180)
1SS133
Diodes
Rev.B
3/3

AMBIENT TEMPERATURE:Ta()
Derating Curve(Io-Ta)
AV
ER
AG
E
R
E
C
T
I
F
I
E
D
F
O
RW
ARD

CU
RREN
T
:
I
o
(
A)
CASE TEMPARATURE:Tc()
Derating Curve(Io-Tc)
EL
ECT
R
O
S
T
A
T
I
C
D
I
SCH
A
R
G
E
T
E
ST

E
SD
(
K
V)
ESD DISPERSION MAP
0.00
0.05
0.10
0.15
0.20
0
25
50
75
100
125
150
175
0.00
0.05
0.10
0.15
0.20
0
25
50
75
100
125
150
175
A
V
E
R
AG
E

R
E
C
T
IF
IE
D
F
O
RW
A
R
D

C
U
RR
E
N
T
:
Io
(
A
)
0
5
10
15
20
AVE:7.4kV
C=200pF
R=0
AVE:2.2kV
C=100pF
R=1.5k
DC
D=1/2
DC
D=1/2
Sin(180)
Sin(180)
T
Tj=175
D=t/T
t
VR
Io
VR=40V
0A
0V
T
Tj=175
D=t/T
t
VR
Io
VR=40V
0A
0V
Appendix
Appendix1-Rev1.1


The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
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safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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