1SS376
Diodes
Switching diode
1SS376
!
!
!
!Applications
High voltage switching
!
!
!
!Features
1) Small surface mounting type. (UMD2)
2) V
RM
=300V guaranteed.
3) High reliability.
!
!
!
!Construction
Silicon epitaxial planar
!
!
!
!External dimensions
(Units : mm)
0.3
0.05
0.1
0.05
0.7
1.25
0.1
1.7
0.1
2.5
0.2
ROHM : UMD2
EIAJ : SC-76
JEDEC : SOD-323
Model identification label
+
0.2
-
0.1
CATHODE MARK
!
!
!
!Absolute maximum ratings
(Ta = 25
C)
Parameter
Symbol
Limits
Unit
V
RM
300
V
V
R
250
V
I
FM
300
mA
I
O
100
mA
2
A
125
C
Tstg
-
55~
+
125
C
I
surge
Tj
Peak reverse voltage
DC reverse voltage
Peak forward current
Surge current (10ms)
Junction temperature
Mean rectifying current
Storage temperature
!
!
!
!Electrical characteristics
(Ta = 25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditons
V
F
-
-
1.2
V
I
F
=100mA
I
R
-
-
0.2
A
V
R
=250V
-
-
3
pF
V
R
=0V, f=1MHz
t
rr
-
-
100
ns
I
R
=30mA, I
F
=30mA, Irr=3mA
C
T
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
I
R
-
-
100
A
V
R
=300V
Reverse current
1SS376
Diodes
!
!
!
!Electrical characteristic curves
(Ta = 25
C)
100m
10m
1m
200
0.5
1.0
0
FORWARD VOLTAGE : V
F
(V)
FORWARD CURRENT : I
F
(A)
125
C
75
C
25
C
-
25
C
Fig.1 Forward characteristics
0
100
10
1
100n
10n
50
100
150
200
250
300
2n
REVERSE CURRENT : I
R
(A)
REVERSE VOLTAGE : V
R
(V)
125
C
75
C
25
C
Fig.2 Reverse characteristics
0
10
20
30
1.2
1.1
1.0
REVERSE VOLTAGE : V
R
(V)
CAPACITANCE BETWEEN TERMINALS : C
T
(pF)
Fig.3 Capacitance between
terminals characteristics
0
20
40
60
20
40
60
REVERSE RECOVERY TIME : t
rr
(ns)
FORWARD CURRENT : I
F
Fig.4 Reverse recovery time
characteristics
0
5
10
1
10
100
1000
0.2
Ta=25
C NON REPETITIVE
FORWARD SURGE
CURRENT I
F
(A)
PULSE WIDTH
PULSE WIDTH : TIME (ms)
FORWARD SURGE CURRENT : I
F
Surge (A)
Fig.5 Surge current characteristics
P=50%
0
0
20
40
60
80
100
25
50
75
100
125
Io CURRENT (%)
AMBIENT TEMPERATURE : Ta (
C)
Fig.6 Derating curve
(mounting on glass epoxy PCBs)
PDF 
ZIP