1SS390
Diodes
Band switching diode
1SS390
!
!
!
!Applications
High frequency switching
!
!
!
!Features
1) Extremely Small surface mounting type. (EMD2)
2) High reliability.
!
!
!
!Construction
Silicon epitaxial planar
!
!
!
!External dimensions
(Units : mm)
1.6
0.1
1.2
0.05
0.8
0.05
CATHODE MARK
0.6
0.1
0.12
0.05
ROHM : EMD2
EIAJ : SC-79
JEDEC : SOD-523
0.3
0.05
!
!
!
!Absolute maximum ratings
(Ta=25
C)
Parameter
Symbol
Limits
Unit
V
R
35
V
I
F
100
mA
Tj
125
C
Tstg
C
-
55
~
+
125
DC reverse voltage
DC forward current
Junction temperature
Storage temperature
!
!
!
!Electrical characteristics
(Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
V
F
-
1.0
V
I
F
=
10mA
I
R
-
10
nA
V
R
=
25V
-
1.2
pF
V
R
=
6V, f
=
1MHz
r
F
-
0.9
I
F
=
2mA, f
=
100MHz
C
T
-
-
-
-
Forward voltage
Capacitance between terminals
Forward operating resistance
Reverse current
1SS390
Diodes
!
!
!
!Electrical characteristic curves
(Ta=25
C)
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1
100m
10m
1m
100
10
1
100n
FORWARD CURRENT : I
F
(
mA)
FORWARD VOLTAGE : V
F
(V)
Fig. 1 Forward characteristics
0
10
20
30
40
50
0.1
1.0
10.0
REVERSE CURRENT : I
R
(
nA)
REVERSE VOLTAGE : V
R
(V)
Fig. 2 Reverse characteristics
0
0
1
2
3
10
20
30
REVERSE VOLTAGE : V
R
(V)
CAPACITANCE BETWEEN TERMINALS : C
T
(
pF)
Fig. 3 Capacitance between
terminals characteristics
f=100MHz
1
2
5
10
0.2
0.5
1.0
0
FORWARD OPERATING RESISTANCE : r
F
(
)
FORWARD CURRENT : I
F
(mA)
Fig. 4 Forward operating
resistance characteristics
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