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Электронный компонент: 2SA1036K

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2SA1036K
Transistors
Rev.A
1/3
Medium Power Transistor
2SA1036K

Features
1) Large I
C
.
I
CMAX.
= -500mA
2) Low V
CE(sat).
Ideal for low-voltage
operation.
3) Complements the 2SC2411K.

Structure
Epitaxial planer type
PNP silicon transistor





External dimensions (Unit : mm)
Denotes h
FE

2SA1036K
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
Abbreviated symbol : H
0~0.1
2.8 0.2
1.6
0.3~0.6
1.1
0.8 0.1
0.15
0.4
2.9 0.2
1.9 0.2
0.95 0.95
+0.2 -
0.1
-0.1
+0.2
+0.1
+0.1
-0.05
-0.06
(2)
(1)
(3)
All terminals have
same dimensions

Absolute maximum ratings (Ta=25
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
-
40
V
V
V
A
W
-
32
-
5
-
0.5
0.2
150
-
55 to +150
Symbol
Limits
Unit
P
C MAX.
must not be exceeded.
C
C










2SA1036K
Transistors
Rev.A
2/3
Electrical characteristics (Ta=25
C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector outoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
-
40
-
32
-
5
-
-
82
-
-
-
-
-
-
-
-
-
200
-
-
-
-
1
-
1
390
-
0.6
-
V
I
C
=
-
100
A
I
C
=
-
1mA
I
E
=
-
100
A
V
CB
=
-
20V
V
EB
=
-
4V
V
CE
=
-
3V, I
C
=
-
100mA
I
C
/I
B
=
-
300mA/
-
30mA
V
CE
=
-
5V, I
E
=20mA, f=100MHz
V
CB
=
-
10V, I
E
=0A, f=1MHz
V
V
-
V
MHz
-
7
-
pF
Typ.
Max.
Unit
Conditions
A
A

Packaging specifications
Package
Code
Taping
Basic ordering unit (pieces)
h
FE
T146
3000
PQR
2SA1036K
Type

h
FE
values are classifies as follows.
Item
P
Q
R
h
FE
82 to 180
120 to 270
180 to 390
Electrical characteristic curves
-0.2
0
-500
-200
-100
-50
-20
-10
-5
-2
-1
-0.5
-0.2
-0.1
-0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2
V
CE
=-3
V
COLLECTOR CURRENT : I
C
(
mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propogation
Ta=100 C
25 C
-55 C
-1
-40
-80
-3
0
-20
-60
-100
0
-2
-4
-5
-200
-400
-10
-5
0
-100
-300
-500
0
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Ta=25 C
Fig.3 Ground emitter output
characteristics (
)
I
B
=
0A
-0.5mA
-1.0mA
-1.5mA
-2.0mA
-2.5mA
-3.0mA
-3.5mA
-4.0mA
-4.5mA
-5.0mA
Ta=25 C
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Grounded emitter output
characteristics (
)
I
B
=
0A
-0.1mA
-0.2mA
-0.3mA
-0.4mA
-0.5mA
-0.6mA
-0.7mA
-0.8mA
-0.9mA
-1mA







2SA1036K
Transistors
Rev.A
3/3
500
1000
200
100
50
20
DC CURRENT GAIN : h
FE
-1
-2
-5 -10 -20
-50 -100 -200 -500 -1000
V
CE
=-5V
-3V
-1V
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs.
collector current (
)
Ta=25 C
500
1000
200
100
50
20
-1
-2
-5 -10 -20
-50 -100 -200 -500 -1000
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.5 DC current gain vs.
collector current (
)
V
CE
=-
3V
Ta
=
100 C
25 C
-
55 C
-0.1
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
-1
-2
-5
-10 -20
-50 -100 -200 -500
-1
-0.5
-0.2
-0.05
-0.02
COLLECTOR CURRENT : I
C
(mA)
I
C
/I
B
=
50
20
10
Fig.6 Collector emitter saturation
voltage vs. collector current (
)
Ta
=
25 C

-0.05
-0.03
-0.02
-0.01
-1
-2
-5
-10 -20
-50 -100 -200
-500 -1000
-0.5
-0.3
-0.2
-0.1
-1.0
l
C
/l
B
=
10
COLLECTOR SATURATION
VOLTAGE : V
CE(sat)
(
V)
COLLECTOR CURRENT : I
C
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (
)
Ta
=
100 C
25 C
-55 C
50
0.5
20
50
100
200
500
1000
1
2
5
10
TRANSITION FREQUENCY : f
T
(
MHz)
EMITTER CURRENT : I
E
(mA)
Fig.8 Gain bandwidth product vs.
emitter current
Ta
=
25 C
V
CE
=-
5V
COLLECTOR OUTPUT CAPACITANCE : Cob
(
pF)
EMITTER INPUT CAPACITANCE : Cib
(
pF)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.9 Collectur output capacitance vs.
collector-base voltage. Emitter input
capacitance vs. emitter -base voltage
-50
-0.5
-20
2
5
10
50
100
-1
-2
-5
-10
20
Ta
=
25 C
f
=
1MHz
I
E
=
0A
I
C
=
0A
Appendix
Appendix1-Rev1.1


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appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
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Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
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are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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