2SA1759
Transistors
Rev.A
1/3
High-voltage Switching Transistor
(Camera strobes and Telephone, Power supply)
(
-
400V,
-
0.1A)
2SA1759
Features
1) High breakdown voltage. (BV
CEO
=
-
400V)
2) Low saturation voltage,
typically V
CE (sat)
=
-
0.2V at I
C
/ I
B
=
-
20mA /
-
2mA.
3) High switching speed, typically tf = 1
s at Ic =100mA.
4) Wide SOA (safe operating area).
5) Complements the 2SA4505.
External dimensions (Unit : mm)
MPT3
(1)Base
(2)Collector
(3)Emitter
1.5
0.4
1.6
0.5
3.0
0.4
0.4
1.5
1.5
(3)
(2)
(1)
4.5
0.5
4.0
2.5
1.0
Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
-
400
-
400
-
7
-
0.1
0.5
150
-
55 to +150
Unit
V
V
V
A(DC)
-
0.2
A(Pulse)
W
1
2
2
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1 Single pulse, Pw
=
100ms
2 When mounted on a 40
40
0.7 mm ceramic board.
Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
-
400
-
400
-
7
-
-
-
82
-
-
-
-
-
-
-
-
0.2
-
12
13
-
-
-
-
10
-
10
-
0.5
180
-
-
V
V
V
A
A
V
-
MHz
pF
I
C
= -
50
A
I
C
= -
1mA
I
E
= -
50
A
V
CB
= -
400V
V
EB
= -
6V
I
C
= -
20mA, I
B
=
-
2mA
V
BE(sat)
-
-
-
1.5
V
I
C
= -
20mA, I
B
=
-
2mA
V
CE
= -
10V , I
C
= -
10mA
V
CE
= -
10V , I
E
=
10mA , f
=
5MHz
V
CB
= -
10V , I
E
=
0A , f
=
1MHz
t
on
-
0.7
-
s
I
C
= -
100mA R
L
=
1.5k
t
stg
-
1.8
-
s
I
B1
= -
I
B2
= -
10mA
t
f
-
1
-
s
V
CC
~
-
150V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Base-emitter saturation voltage
Turn-on time
Storage time
Fall time
2SA1759
Transistors
Rev.A
2/3
Packaging specifications and h
FE
Type
2SA1759
MPT3
P
3000
T100
AH
Denotes h
FE
Package
h
FE
Basic
ordering unit
(pieces)
Code
Marking
Electrical characteristics (Ta=25
C)
0
1
2
3
4
5
-
20
-
40
-
60
-
80
-
100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
0
Fig.1 Ground emitter output characteristics (
)
Ta
=25
C
I
B
=
0
-
0.5mA
-
1mA
-
2mA
-
1.5mA
-
5mA
-
4.5mA
-
4mA
-
3.5mA
-
3mA
-
2.5mA
0
10
20
30
40
50
-
20
-
40
-
60
-
80
-
100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
0
Fig.2 Ground emitter output characteristics (
)
I
B
=-
0.1mA
-
0.2mA
-
0.3mA
-
0.4mA
-
0.5mA
-
0.6mA
-
0.7mA
-
0.8mA
-
0.9mA
-
1mA
Ta
=25
C
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
1.4
0.4
0.6
0.8
1.0
1.2
0.2
0
-
0.5
-
1
-
2
-
5
-
10
-
20
-
50
-
100
-
200
Ta=100
C
25
C
-
25
C
V
CE
=-
5V
Fig.3 Ground emitter propagation characteristis
-
0.5
-
1
-
2
-
5
-
10
-
20
-
50
-
100
-
200
-
0.02
-
0.05
-
0.1
-
0.2
-
0.5
-
1
-
2
-
5
-
10
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
-
0.01
Fig.6 Collector-emitter saturation voltage
vs. collector current
Ta
=25
C
I
C
/I
B
=
20
10
-
0.5
-
1
-
2
-
5
-
10
-
20
-
50
-
100
-
200
DC CURRENT GAIN : h
EF
COLLECTOR CURRENT : I
C
(mA)
1
2
5
10
20
50
100
200
500
1000
Fig.4 DC current gain vs.collector current (
)
Ta
=25
C
V
CE
=-
10V
5V
0.5
1
2
5
10
20
50
100 200
2
10
20
50
100
200
500
5
TRANSITION FREQUENCY : f
T
(MHz)
EMITTER CURRENT : I
E
(mA)
1000
1
Fig.8 Gain bandwidth products
vs. emitter current
Ta
=25
C
V
CE
=-
10V
-
0.5
-
1
-
2
-
5
-
10
-
20
-
50
-
100
-
200
DC CURRENT GAIN : h
EF
COLLECTOR CURRENT : I
C
(mA)
1
2
5
10
20
50
100
200
500
1000
Fig.5 DC current gain vs.collector current (
)
V
CE
=-
10V
-
25
C
Ta
=100
C
25
C
1000
(pF)
-
0.05
-
0.1
-
0.2
-
0.5
-
1
-
2
-
5
-
10
-
20
-
50
2
10
20
50
100
200
500
5
COLLECTOR OUTPUT CAPACITANCE : C
ob
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
1
Fig.9 Collector output capacitance
vs. collector-base voltage
Ta
=25
C
f
=
1MHz
I
E
=
0A
0.5
1
2
5
10
20
50
100 200
COLLECTOR SATURATION VOLTAGE :V
BASE SATURATION VOLTAGE :V
BE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
CE(sat)
(V)
-
0.01
-
0.02
-
0.05
-
0.1
-
0.2
-
0.5
-
1
-
2
Fig.7 Collector-emitter saturation voltage
Base-emitter saturation voltage
vs. Collector current
-
5
-
10
I
C
/I
B
=
10V
V
BE(sat)
V
CE(sat)
100
C
25
C
-
25
C
25
C
Ta
=
-
25
C
Ta
=100
C
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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