ChipFind - документация

Электронный компонент: 2SA1834

Скачать:  PDF   ZIP

Document Outline

2SA1834
Transistors
Rev.A
1/3
Low V
CE(sat)
Transistor (Strobe flash)
(
-
20V,
-
10A)
2SA1834

Features
1) Low saturation voltage,
typically V
CE(sat)
=
-
0.16V at I
C
/ I
B
=
-
4A /
-
50mA.
2) High current capacity, typically I
C
= 10A for DC
operation and 15A for 10ms pulse.
3) Complements the 2SC5001.

Packaging specifications and h
FE
Type
2SA1834
CPT3
RS
TL
2500
Package
h
FE
Code
Basic ordering unit (pieces)
External dimentions (Unit : mm)
CPT3
(1)Base
(2)Collector
(3)Emitter
6.5
2.3
(2)
(3)
0.65
0.9
(1)
0.75
2.3
0.9
5.1
1.5
5.5
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5


Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
-
30
-
20
-
6
-
10
1
10
150
-
55 to
+
150
Unit
V
V
V
I
B
-
2
A
A
-
15
A
W
W(Tc
=
25
C)
C
C
Single pulse Pw
=
10ms
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Base current


Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE2
f
T
Cob
-
30
-
20
-
6
-
-
-
82
-
-
-
-
-
-
-
-
0.16
-
150
220
-
-
-
-
1
-
1
-
0.25
-
-
-
V
V
V
A
A
V
-
MHz
pF
I
C
=-
50
A
I
C
=-
1mA
I
E
=-
50
A
V
CB
=-
20V
V
EB
=-
5V
I
C
/I
B
=-
4A/
-
0.05A
V
BE(sat)
-
-
0.9
-
1.2
V
I
C
/I
B
=-
4A/
-
0.05A
V
CE
=-
2V , I
C
=-
4A
h
FE1
180
-
560
-
V
CE
=-
2V , I
C
=-
0.5A
V
CE
=-
5V , I
E
=
1.5A , f
=
50MHz
V
CB
=-
10V , I
E
=
0A , f
=
1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Base-emitter saturation voltage
DC current transfer ratio
Measured using pulse current.
2SA1834
Transistors
Rev.A
2/3
Electrical characteristics (Ta=25
C)
COLLECTOR CURRENT : I
C
(A)
BASE TO EMITTER VOLTAGE : V
BE
(V)
-
1.4
-
0.4
-
0.6
-
0.8
-
1.0
-
1.2
-
0.2
0
-
1m
-
2m
-
5m
-
10m
-
20m
-
50m
-
100m
-
200m
-
500m
-
1
-
2
-
5
-
10
V
CE
= -
2V
Fig.1 Ground emitter propagation
characteristics
Ta
=
150
C
25
C
-
55
C
-
20m
-
1
-
2
-
5
-
10
-
20
-
50m
-
100m
-
200m
-
500m
DC CURRENT GAIN : h
EF
COLLECTOR CURRENT : I
C
(A)
10
20
50
100
200
500
1000
2000
5000
10000
Fig.2 DC current gain vs. collector current(
)
V
CE
= -
5V
-
2V
-
1V
Ta
=25
C
-
20m
-
1
-
2
-
5
-
10
-
20
-
50m
-
100m
-
200m
-
500m
DC CURRENT GAIN : h
EF
COLLECTOR CURRENT : I
C
(A)
10
20
50
100
200
500
1000
2000
5000
10000
Fig.3 DC current gain vs.collector current (
)
25
C
Ta
=150
C
V
CE
= -
2V
-
55
C


-
10m
-
20m
-
50m
-
100m
-
200m
-
500m
-
1
-
2
-
5
-
10
-
20
-
2
-
5
-
10
-
20
-
50
-
100
-
200
-
500
-
1000
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR CURRENT : I
C
(A)
-
1
Fig.4 Collector-emitter saturation voltage
vs. collector current (
)
I
C
/I
B
=
80
20
40
Ta
=25
C
Fig.5 Collector-emitter saturation voltage
vs. collector current (
)
-
20m
-
50m
-
100m
-
200m
-
500m
-
1
-
2
-
5
-
10
-
20
-
5
-
10
-
20
-
50
-
100
-
200
-
500
-
1000
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR CURRENT : I
C
(A)
-
1
-
2
I
C
/I
B
=
80
Ta
= -
55
C
25
C
150
C
-
20m
-
50m
-
100m
-
200m
-
500m
-
1
-
2
-
5
-
10
-
20
-
50m
-
100m
-
200m
-
500m
-
1
-
2
-
5
-
10
BASE SATURATION VOLTAGE : V
BE(sat)
(mV)
COLLECTOR CURRENT : I
C
(A)
-
10m
-
20m
Fig.6 Base-emitter saturation voltage
vs. collector current
I
C
/I
B
=
80
Ta
=-
55
C
25
C
150
C


5m
10m 20m
50m 100m 200m
500m
1
2
5
10
TRANSITION FREQUENCY : f
T
(MHz)
EMITTER CURRENT : I
E
(A)
5
10
20
50
100
200
500
1000
Fig.7 Gain bandwidth product
vs. emitter current
5m
10m 20m
50m 100m 200m
500m
1
2
5
10
TRANSITION FREQUENCY : f
T
(MHz)
EMITTER CURRENT : I
E
(A)
5
10
20
50
100
200
500
1000
V
CE
= -
5V
Ta
=
25
C
f
=
50MHz
-
0.05
-
0.1
-
0.2
-
0.5
-
1
-
2
-
5
-
10
-
20
-
50
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
50
20
10
100
200
500
1000
2000
5000
10000
Fig.8 Collector output capacitance
vs. collector-base voltage
I
E
=
0A
Ta
=
25
C
f
=
1MHz
-
0.05
-
0.1
-
0.2
-
0.5
-
1
-
2
-
5
-
10
-
20
-
50
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : V
EB
(V)
50
20
10
100
200
500
1000
2000
5000
10000
Fig.9 Emitter input capacitance
vs. emitter-base voltage
I
C
=
0A
Ta
=
25
C
f
=
1MHz







2SA1834
Transistors
Rev.A
3/3

0.01 0.02
0.05
0.1 0.2
0.5
1 2
5
10 20
50 100
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
500m
200m
100m
50m
20m
10m
1
2
5
10
20
50
100
Fig.10 Safe operating area
Ta
=
25
C
Single
nonrepetitive
pulse
DC
Pw
=
10ms
100ms
Appendix
Appendix1-Rev1.1


The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.