2SA2018H
Transistors
Low-frequency Transistor
2SA2018H
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes.
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Applications
For switching, for muting.
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Features
1) A collector current is large.
2) Collector saturation voltage is low.
V
CE(sat)
250mV
At I
C
= 200mA / I
B
= 10mA
3) Flat lead
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External dimensions (Units : mm)
ROHM : EMT3 Flat lead
EIAJ : SC-89
(1) Base
(3) Collector
(2) Emitter
0.12
0.27
(3)
0.7
1.0
0.5
0.5
1.6
1.6
0.85
(2)
(1)
Abbreviated symbol : BW
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Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CBO
V
CEO
I
C
I
CP
P
C
Tj
Tstg
Limits
15
12
500
150
150
-
55~
+
150
Unit
V
V
mA
1
A
mW
C
C
Single pulse, P
W
=1ms
Collector-base voltage
Collector-emitter voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
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Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
15
12
6
-
270
-
-
-
-
-
-
-
-
100
260
6.5
-
-
-
100
680
250
-
-
V
V
V
nA
-
mV
MHz
pF
I
C
=10
A
I
C
=1mA
I
E
=10
A
V
CB
=15V
V
CE
=2V / I
C
=10mA
I
C
=200mA / I
B
=10mA
V
CE
=2V , I
E
=10mA , f
T
=100MHz
V
CB
=10V , I
E
=0A , f=1MHz
BV
CBO
BV
CEO
BV
EBO
I
CBO
V
CE(sat)
h
FE
f
T
Cob
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
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Packaging specifications and h
FE
Package name
Code
Taping
Basic ordering unit
(pieces)
h
FE
2SA2018H
T2L
8000
Type
2SA2018H
Transistors
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Electrical characteristic curves
0
1
2
5
20
50
100
200
500
1000
10
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
COLLECTOR CURRENT : I
C
(mA)
1.5
1.0
0.5
V
CE
=2V
Ta=125C
Ta=25C
Ta= -40C
1
2
5
10
20
50
100
200
1000
COLLECTOR CURRENT : I
C
(mA)
Fig.2 DC current gain vs.
collector current
1
DC CURRENT GAIN : h
FE
500
2
5
10
200
500
1000
20
50
100
Ta=25C
Ta= -40C
Ta=125C
V
CE
=2V
1
2
5
10
20
50
100
200
1000
COLLECTOR CURRENT : I
C
(mA)
Fig.3 Collector-emitter saturation voltage
vs. collector current ( I )
1
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
500
2
5
10
200
500
1000
20
50
100
Ta=25C
Ta= -40C
Ta=125C
I
C
/I
B
=20
1
2
5
10
20
50
100
200
1000
COLLECTOR CURRENT : I
C
(mA)
1
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
500
2
5
10
200
500
1000
20
50
100
Ta=25C
I
C
/ I
B
=50
I
C
/ I
B
=20
I
C
/ I
B
=10
Fig.4 Collector-emitter saturation voltage
vs. collector current
1
2
5
10
20
50
100
200
1000
COLLECTOR CURRENT : I
C
(mA)
10
BASER SATURATION VOLTAGE : V
BE (sat)
(mV)
500
20
50
100
2000
5000
10000
200
500
1000
Ta=25C
Ta= -40C
Ta=125C
I
C
/I
B
=20
Fig.5 Base-emitter saturation voltage
vs. collector current
1
2
5
10
20
50
100
200
1000
EMITTER CURRENT : I
C
(mA)
Fig.6 Gain bandwidth product vs.
emitter current
1
TRANSITION FREQUENCY : f
T
(MHz)
500
2
5
10
200
500
1000
20
50
100
V
CE
=2V
Ta=25C
0.2
0.1
0.5
1
2
5
10
20
50
100
1
2
5
10
20
50
100
200
500
1000
Ta=25C
f=1MHz
I
E
=0A
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.7 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Cib
Cob
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