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Электронный компонент: 2SA2029

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2SA1037AK / 2SA1576A / 2SA1774 /
Transistors
2SA2029 / 2SA933AS
General Purpose Transistor
(
-50V, -0.15A)
2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 /
2SA933AS
!
Features
1) Excellent h
FE
linearity.
2) Complements the 2SC2412K /
2SC4081 / 2SC4617 / 2SC5658 /
2SC1740S.
!
!
!
!
Structure
Epitaxial planar type.
PNP silicon transistor
!
!
!
!
External dimensions (Units : mm)
2SA1037AK
Abbreviated symbol : F
Abbreviated symbol : F
Abbreviated symbol : F
Denotes h
FE
Abbreviated symbol : F
ROHM : SMT3
EIAJ : SC-59
(3) Collector
(1) Emitter
(2) Base
Each lead has same dimensions
0.8
0.15
0to0.1
0.3to0.6
1.1
( 2
)
( 1
)
2.8
1.6
0.4
( 3
)
2.9
1.9
0.95
0.95
2SA1774
ROHM : EMT3
EIAJ : SC-75A
(3) Collecto
(1) Emitter
(2) Base
0.7
0.15
0.1Min.
0.55
0to0.1
0.2
1.6
1.6
1.0
0.3
0.8
(2)
0.5
0.5
(3)
0.2
(1)
2SA1576A
ROHM : UMT3
EIAJ : SC-70
(3) Collector
(1) Emitter
(2) Base
Each lead has same dimensions
1.25
2.1
0.3
0.15
0to0.1
0.1to0.4
( 3
)
0.9
0.7
0.2
0.65
( 2
)
2.0
1.3
( 1
)
0.65
2SA2029
ROHM : VMT3
EIAJ :
2SA933AS
ROHM : SPT
EIAJ : SC-72
0.45
2.5
(1) (2) (3)
(3) Base
(1) Emitter
(2) Collector
( 15Min.
)
5
3
3Min.
Taping specifications
0.45
0.5
4
2
(1) Base
(2) Emitter
(3) Collector
0to0.1
(3)
0.32
0.8
1.2
0.13
0.5
0.22
0.4
0.4
1.2
0.8
0.2
0.15Max.
0.2
(2)
(1)
2SA1037AK / 2SA1576A / 2SA1774 /
Transistors
2SA2029 / 2SA933AS
!
!
!
!
Absolute maximum ratings (Ta=25
C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Parameter
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
-
60
V
V
V
A (DC)
C
C
-
50
-
6
-
0.15
W
0.2
0.15
0.3
2SA1037AK, 2SA1576A
2SA2029, 2SA1774
2SA933AS
150
-
55~
+
150
Symbol
Limits
Unit
!
!
!
!
Electrical characteristics (Ta=25
C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
-
60
-
50
-
6
-
-
120
-
-
-
-
-
-
-
-
-
-
140
4.0
-
-
-
-
0.1
-
0.1
560
-
0.5
-
5.0
V
I
C
=-
50
A
I
C
=-
1
A
I
E
=-
50
A
V
CB
=-
60V
V
EB
=-
6V
V
CE
=-
6V, I
C
=-
1mA
I
C
/I
B
=-
50mA/
-
5mA
V
CE
=-
12V, I
E
=
2mA, f
=
30MHz
V
CB
=-
12V, I
E
=
0A, f
=
1MHz
V
V
A
A
-
V
MHz
pF
Typ.
Max.
Unit
Conditions
!
!
!
!
Packaging specifications and h
FE
Package
Code
Taping
Basic ordering
unit (pieces)
QRS
h
FE
2SA1037AK
T146
3000
-
-
QRS
2SA1576A
T106
3000
-
-
TL
3000
-
-
-
QRS
2SA1774
-
-
T2L
8000
-
-
-
-
QRS
2SA2029
-
-
-
-
QRS
2SA933AS
-
-
-
TP
5000
Type
h
FE
values are classified as follows:
Item
Q
R
S
h
FE
120~270
180~390
270~560
2SA1037AK / 2SA1576A / 2SA1774 /
Transistors
2SA2029 / 2SA933AS
!
!
!
!
Electrical characteristic curves
Fig.1 Grounded emitter propagation
characteristics
-
0.2
COLLECTOR CURRENT : Ic (
mA)
-
50
-
20
-
10
-
5
-
2
-
1
-
0.5
-
0.2
-
0.1
-
0.4
-
0.6
-
0.8
-
1.0
-
1.2
-
1.4
-
1.6
V
CE
=
-
6V
BASE TO EMITTER VOLTAGE : V
BE
(
V)
Ta=100C
25C
-
40C
Fig.2 Grounded emitter output
characteristics (I)
-
0.4
-
4
-
8
-
1.2
0
-
2
-
6
-
10
-
0.8
-
1.6
-
2.0
-
3.5
A
-
7.0
-
10.5
-
14.0
-
17.5
-
21.0
-
24.5
-
28.0
-
31.5
I
B
=0
Ta=25C
-
35.0
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR TO MITTER VOLTAGE : V
CE
(
V)
Fig.3 Grounded emitter output
characteristics (II)
-
40
-
80
-
5
-
3
-
4
-
2
-
1
-
20
-
60
-
100
0
I
B
=0
Ta=25C
COLLECTOR CURRENT : I
C
(
mA
)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V)
-
50
A
-
100
-
150
-
200
-
250
-
500
-
450
-
400
-
350
-
300
Fig.4 DC current gain vs.
collector current (I)
500
200
100
50
-
0.2
-
0.5
-
1
-
2
-
5
-
10
-
20
-
50
-
100
DC CURRENT GAIN : h
FE
Ta=25C
V
CE
=
-
5V
-
3V
-
1V
COLLECTOR CURRENT : I
C
(
mA)
Fig.5 DC current gain vs.
collector current (II)
500
200
100
50
-
0.2
-
0.5
-
1
-
2
-
5
-
10
-
20
-
50
-
100
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(
mA)
V
CE
=
-
6V
Ta=100C
-
40C
25C
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
-
0.1
-
0.2
-
0.5
-
1
-
2
-
5
-
10
-
20
-
50
-
100
-
1
-
0.5
-
0.2
-
0.05
Ta=25C
COLLECTOR CURRENT : I
C
(
mA)
I
C
/I
B
=
50
20
10
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
-
0.1
-
0.2
-
0.5
-
1
-
2
-
5
-
10
-
20
-
50
-
100
-
1
-
0.5
-
0.2
-
0.05
COLLECTOR CURRENT : I
C
(
mA)
l
C
/l
B
=10
Ta=100C
25C
-
40C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
Fig.8 Gain bandwidth product vs.
emitter current
50
100
0.5
20
50
100
200
500
1000
1
2
5
10
EMITTER CURRENT : I
E
(
mA)
TRANSITION FREQUENCY : f
T
(
MHz)
Ta=25C
V
CE
=
-
12V
Fig.9
Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE : Cib (
pF)
-
0.5
-
20
2
5
10
-
1
-
2
-
5
-
10
20
Cib
Cob
Ta=25C
f=1MHz
I
E
=
0A
I
C
=
0A