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Электронный компонент: 2SA2030

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2SA2018 / 2SA2030 / 2SA2119K
Transistors
Rev.A 1/2
Low frequency transistor
2SA2018 / 2SA2030 / 2SA2119K


The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.

Applications
For switching, for muting.

Features
1) A collector current is large.
2) Collector saturation voltage is low.
V
CE (sat)
250mA
At I
C
= 200mA / I
B
= 10mA






Absolute maximum ratings
(Ta=25
C)
Parameter
Symbol
V
CBO
V
CEO
P
C
Tstg
Limits
15
12
150
-
55 to
+
150
Unit
V
V
mW
C
C
Collector-base voltage
Collector-emitter voltage
Collector power dissipation
Storage temperature
I
C
I
CP
500
1
mA
A
Collector current
Tj
150
Junction temperature
SMT3
300
VMT3
EMT3
Single pulse, Pw
=
1ms

External dimensions
(Unit : mm)
(1) Emitter
(2) Base
(3) Collector
ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416
1.6
0.7
0.15
0.1Min.
0.55
0.2
1.6
1.0
0.3
0.8
(2)
0.5
0.5
(3)
0.2
(1)
Each lead has same dimensions
Abbreviated symbol :
BW
2SA2018
0.8
0.15
0.3Min.
1.1
( 2
)
( 1
)
2.8
1.6
0.4
( 3
)
2.9
1.9
0.95
0.95
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
Each lead has same dimensions
Abbreviated symbol :
BW
2SA2119K
(3)
0.32
0.8
1.2
0.13
0.5
0.22
0.4
0.4
1.2
0.8
0.2
0.2
(2)
(1)
(1) Base
(2) Emitter
(3) Collector
ROHM : VMT3
Each lead has same dimensions
Abbreviated symbol :
BW
2SA2030
Electrical characteristics
(Ta=25
C)
Parameter
Collector-base breakdown voltage
Symbol
Min.
Typ. Max.
Unit
Conditions
BV
CBO
15
-
-
V
I
C
=
10
A
I
C
=
1mA
I
E
=
10
A
V
CB
=
15V
I
C
=
200mA / I
B
=
10mA
V
CE
=
2V / I
C
=
10mA
V
CE
=
2V, I
E
=
10mA, f
T
=
100MHz
V
CB
=
10V, I
E
=
0A, f
=
1MHz
Collector-emitter breakdown voltage
BV
CEO
12
-
-
V
Emitter-base breakdown voltage
BV
EBO
6
-
-
V
Collector cutoff current
I
CBO
-
-
100
nA
Collector-emitter saturation voltage
V
CE (sat)
-
100
250
mV
DC current transfer ratio
h
FE
270
-
680
-
Transition frequency
f
T
-
260
-
MHz
Output capacitance
Cob
-
6.5
-
pF


2SA2018 / 2SA2030 / 2SA2119K
Transistors
Rev.A 2/2
Packaging specifications and h
FE
Package name
Code
Taping
Basic ordering unit (pieces)
2SA2119K
2SA2018
2SA2030
T146
3000
TL
3000
-
-
-
-
T2L
8000
-
-
Type
h
FE

Electrical characteristic curves
1
2
5
10
20
50
100
200
500
1000
0
0.5
1.0
1.5
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(mA)
V
CE
=
2V
Fig.1 Grounded Emitter Propagation
Characteristics
Ta
= -
40
C
Ta
=
25
C
Ta
=
125
C
1
2
5
10
20
50
100
200
500
1000
1
2
5
10 20
50 100 200
500 1000
COLLECTOR CURRENT : I
C
(mA)
DC CURRENT GAIN : h
FE
V
CE
=
2V
Fig.2 DC Current Gain vs.
Collector Current
Ta
= -
40
C
Ta
=
25
C
Ta
=
125
C
1
2
5
10
20
50
100
200
500
1000
1
2
5
10 20
50 100 200
500 1000
COLLECTOR CURRENT : I
C
(mA)
I
C
/ I
B
=
20
Ta
= -
40
C
Ta
=
25
C
Ta
=
125
C
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(V)
Fig.3 Collector-Emitter Saturation
Voltage vs.
Collector Current
(
)
1
2
5
10
20
50
100
200
500
1000
1
2
5
10 20
50 100 200
500 1000
COLLECTOR CURRENT : I
C
(mA)
Ta
=
25
C
I
C
/ I
B
=
50
I
C
/ I
B
=
20
I
C
/ I
B
=
10
Fig.4 Collector-Emitter Saturation
Voltage vs.
Collector Current
(
)
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(mV)
10
20
50
100
200
500
1000
2000
5000
10000
1
2
5
10 20
50 100 200
500 1000
COLLECTOR CURRENT : I
C
(mA)
I
C
/ I
B
=
20
Ta
=
125
C
Ta
=
25
C
Ta
= -
40
C
BASER SATURATION VOLTAGE : V
BE (sat)
(mV)
Fig.5 Base-Emitter Saturation
Voltage vs.Collecter Current
1
2
5
10
20
50
100
200
500
1000
1
2
5
10 20
50 100 200
500 1000
EMITTER CURRENT : I
C
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
V
CE
=
2V
Ta
=
25
C
Fig.6 Gain Bandwidth Product vs.
Emitter Current
1
2
5
10
20
50
100
200
500
1000
0.1 0.2
0.5
1
2
5
10 20
50 100
EMITTER TO BASE VOLTAGE : V
EB
(V)
I
E
=
0A
f
=
1MHz
Ta
=
25
C
Fig.7 Collector Output Capacitance vs.
Collector-Base Voltage
Emitter Input Capacitance vs.
Emitter-Base Voltage
Cib
Cob
EMITTER INPUT CAPACITANCE :
Cib (p
F
)
COLLECTOR OUTPUT CAPACITANCE :
Cob (p
F
)
Appendix
Appendix1-Rev1.0


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