2SA2088
Transistors
1/3
Medium power transistor (
-
60V,
-0.5
A)
2SA2088
!
!
!
!
Features
1) High speed switching.
(Tf : Typ. : 60ns
at
I
C
=
-500mA)
2) Low saturation voltage, typically
(Typ. :
-150mV
at
I
C
=
-100mA, I
B
=
-10mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SC5876
!
Applications
Small signal low frequency amplifier
High speed switching
!
!
!
!
External dimensions (Unit : mm)
Each lead has same dimensions
Abbreviated symbol :
VM
(1) Emitter
(2) Base
(3) Collector
1.25
2.1
0.3
0.15
0.1Min.
( 3
)
0.9
0.7
0.2
0.65
( 2
)
2.0
1.3
( 1
)
0.65
UMT3
(SC-70)
<SOT-323>
!
!
!
!
Structure
PNP Silicon epitaxial planar transistor
!
!
!
!
Packaging specifications
Taping
2SA2088
Type
T106
3000
Package
Basic ordering unit (pieces)
Code
!
!
!
!
Absolute maximum ratings (Ta=25
C)
Parameter
V
V
V
A
A
mW
C
C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
-
60
-
60
-
6
-
0.5
-
1.0
200
150
-
55 to 150
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
DC
Pulsed
1
2
1 Pw
=
10ms
2 Each terminal mounted on a recommended land
2SA2088
Transistors
2/3
!
!
!
!
Electrical characteristics (Ta=25
C)
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
Turn-on time
Storage time
Fall time
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE (sat)
h
FE
f
T
C
ob
Ton
Tstg
Tf
I
C
= -
1mA
I
C
= -
100
A
I
E
= -
100
A
V
CB
= -
40V
V
EB
= -
4V
I
C
= -
100mA
I
B
= -
10mA
V
CE
= -
2V
I
C
= -
50mA
V
CE
= -
10V
I
E
=
100mA
f
=
10MHz
V
CB
= -
10V
I
E
=
0A
f
=
1MHz
1
Non repetitive pulse
2
See Switching charactaristics measurement circuits
1
2
-
60
-
60
-
6
-
-
-
120
-
-
-
-
-
-
-
-
-
-
-
150
-
400
10
40
110
60
-
-
-
-
1.0
-
1.0
-
300
270
-
-
-
-
-
V
V
V
A
A
mV
-
MHz
pF
ns
ns
ns
I
C
= -
500mA
I
B1
= -
50mA
I
B2
=
50mA
V
CC
-
25V
!
!
!
!
h
FE
RANK
Q
120
-
270
!
!
!
!
Electrical characteristic curves
-
0.1
-
1
-
100
-
10
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
-
0.001
-
0.01
-
1
-
0.1
-
10
COLLECTOR CURRENT : I
C
(A)
Fig.1 Safe Operating Area
Single
non repetitive
Pulsed
100ms
10ms
1ms
500
s
DC
-
0.01
-
0.1
-
1
10
100
1000
COLLECTOR CURRENT : I
C
(A)
SWITCHING TIME : (ns)
Fig.2 Switching Time
Ta
=
25
C
V
CC
= -
25V
I
C
/ I
B
=
10 / 1
Tstg
Tf
Ton
-
0.001
-
0.01
-
0.1
-
1
10
100
1000
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
Fig.3 DC Current Gain vs.
Collector Current
(
)
V
CE
= -
2V
Ta
=
125
C
Ta
=
25
C
Ta
= -
40
C
-
0.001
-
0.01
-
0.1
-
1
10
100
1000
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
Fig.4 DC Current Gain vs.
Collector Current
(
)
Ta
=
25
C
V
CE
= -
5V
V
CE
= -
3V
V
CE
= -
2V
-
0.001
-
0.01
-
0.1
-
1
-
0.01
-
0.1
-
1
-
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(V)
I
C
/ I
B
=
10 / 1
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current
(
)
Ta
=
125
C
Ta
=
25
C
Ta
= -
40
C
-
0.001
-
0.01
-
0.1
-
1
-
0.01
-
0.1
-
1
-
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(V)
Ta
=
25
C
I
C
/ I
B
=
100/1
I
C
/ I
B
=
20/1
I
C
/ I
B
=
10/1
Fig.6 Collector-Emitter Saturation
Voltage vs. Collector Current
(
)
2SA2088
Transistors
3/3
COLLECTOR CURRENT : I
C
(A)
BASE EMITTER SATURATION
VOLTAGE : V
BE (sat)
(V)
-
0.001
-
0.01
-
0.1
-
1
-
0.1
-
1
-
10
I
C
/ I
B
=
10 / 1
Ta
=
125
C
Ta
=
25
C
Ta
= -
40
C
Fig.7 Base-Emitter Saturation
Voltage vs. Collecter Current
-
0
-
0.5
-
1
-
1.5
-
0.01
-
0.1
-
1
V
CE
= -
2V
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.8 Grounded Emitter
Propagation Characteristics
COLLECTOR CURRENT : I
C
(A)
Ta
=
125
C
Ta
=
25
C
Ta
= -
40
C
EMITTER CURRENT : I
E
(A)
Fig.9 Transition Frequency
TRANSITION FREQUENCY : fT (MHz)
0.001
0.01
0.1
1
10
100
1000
Ta
=
25
C
V
CE
= -
10V
-
0.1
-
1
-
10
-
100
1
10
100
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.10 Collector Output Capacitance
Ta
=
25
C
f
=
1MHz
COLLECTOR OUTPUT
CAPACITANCE : Cob (pF)
!
!
!
!
Switching characteristics measurement circuits
P
W
V
IN
R
L
=
50
I
C
I
B
1
I
B
2
P
W
50
s
DUTY CYCLE
1%
V
CC
-
25V
Ton
Tstg
Tf
I
C
I
B
2
I
B
1
10%
90%
BASE CURRENT
WAVEFORM
COLLECTOR CURRENT
WAVEFORM
Appendix
Appendix1-Rev1.0
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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