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Электронный компонент: 2SA2096

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2SA2096
Transistors
Rev.A 1/3
Power transistor (
-
60V,
-
5
A)
2SA2096

Features
1) High speed switching.
(Tf : Typ. : 25ns
at
I
C
=
-
5A)
2) Low saturation voltage, typically
(Typ. :
-
200mV
at
I
C
=
-
3A, I
B
=
-
0.3A)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SC5881

Applications
Low frequency amplifier
High speed switching
External dimensions (Unit : mm)
Each lead has same dimensions
Abbreviated symbol :
A2096
(1) Base
(2) Collector
(3) Emitter
CPT3
(SC-63)
<SOT-428>
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
(2)
(3)
C0.5
0.65
0.9
(1)
0.75
2.3
0.9
1.5
5.5
5.1
(x1 / 2)

Structure
PNP Silicon epitaxial planar transistor

Packaging specifications
Taping
2SA2096
Type
TL
2500
Package
Basic ordering unit (pieces)
Code

Absolute maximum ratings (Ta=25
C)
Parameter
V
V
V
A
A
W
W
C
C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
-
60
-
60
-
6
-
5.0
-
10.0
1.0
10.0
150
-
55 to 150
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
DC
Pulsed
1
2
3
1 Pw
=
100ms
2 Ta=25
C
3 Tc=25
C


2SA2096
Transistors
Rev.A 2/3
Electrical characteristics (Ta=25
C)
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
Turn-on time
Storage time
Fall time
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE (sat)
h
FE
f
T
Cob
Ton
Tstg
Tf
I
C
= -
1mA
I
C
= -
100
A
I
E
= -
100
A
V
CB
= -
40V
V
EB
= -
4V
I
C
= -
3mA
I
B
= -
0.3mA
V
CE
= -
2V
I
C
= -
100mA
V
CE
= -
10V
I
E
=
100mA
f
=
10MHz
V
CB
= -
10V
I
E
=
0mA
f
=
1MHz
1
Non repetitive pulse
2
See Switching charactaristics measurement circuits
1
1
2
-
60
-
60
-
6
-
-
-
120
-
-
-
-
-
-
-
-
-
-
-
200
-
170
75
25
130
25
-
-
-
-
1.0
-
1.0
-
500
270
-
-
-
-
-
V
V
V
A
A
mV
-
MHz
pF
ns
ns
ns
I
C
= -
5.0A
I
B1
= -
500mA
I
B2
=
500mA
V
CC
-
25V

h
FE
RANK
Q
120
-
270

Electrical characteristic curves
-
0.1
-
1
-
0.1
-
100
-
10
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
-
0.001
-
0.01
-
10
-
1
-
0.1
-
100
COLLECTOR CURRENT : I
C
(A)
Fig.1 Safe Operating Area
Single
non repetitive
Pulsed
10ms
1ms
100
100ms
DC
-
0.01
-
0.1
-
1
-
10
10
100
1000
COLLECTOR CURRENT : I
C
(A)
SWITCHING TIME : SW(ns)
Fig.2 Switching Time
Ta
=
25
C
V
CC
= -
25V
I
C
/ I
B
=
10 / 1
Tstg
Tf
Ton
-
0.001
-
0.01
-
0.1
-
10
-
1
1
100
10
1000
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
Fig.3 DC Current Gain vs.
Collector Current
(
)
V
CE
= -
2V
Ta
=
125
C
Ta
=
25
C
Ta
= -
40
C
-
0.001
-
0.01
-
0.1
-
10
-
1
1
100
10
1000
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
Fig.4 DC Current Gain vs.
Collector Current
(
)
Ta
=
25
C
V
CE
= -
5V
V
CE
= -
3V
V
CE
= -
2V
-
0.001
-
0.01
-
0.1
-
10
-
1
-
0.001
-
0.01
-
0.1
-
1
-
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(V)
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current
(
)
I
C
/ I
B
=
10 / 1
Ta
=
125
C
Ta
=
25
C
Ta
= -
40
C
-
0.001
-
0.01
-
0.1
-
10
-
1
-
0.001
-
0.1
-
0.01
-
1
-
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(V)
Fig.6 Collector-Emitter Saturation
Voltage vs. Collector Current
(
)
I
C
/ I
B
=
100/1
I
C
/ I
B
=
20/1
I
C
/ I
B
=
10/1
Ta
=
25
C
2SA2096
Transistors
Rev.A 3/3

-
0.001
-
0.01
-
0.1
-
10
-
1
-
0.01
-
0.1
-
1
-
10
COLLECTOR CURRENT : I
C
(A)
BASE EMITTER SATURATION
VOLTAGE : V
BE (sat)
(V)
Fig.7 Base-Emitter Saturation
Voltage vs. Collecter Current
I
C
/ I
B
=
10 / 1
Ta
=
125
C
Ta
=
25
C
Ta
= -
40
C
0
1.5
1
0.5
-
0.01
-
0.1
-
1
-
10
V
CE
= -
2V
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.8 Grounded Emitter
Propagation Characteristics
COLLECTOR CURRENT : I
C
(A)
Ta
=
125
C
Ta
=
25
C
Ta
= -
40
C
EMITTER CURRENT : I
E
(A)
Fig.9 Transition Frequency
TRANSITION FREQUENCY : fT (MHz)
0.001
0.01
0.1
1
10
1
100
10
1000
Ta
=
25
C
V
CE
= -
10V

-
0.1
-
1
-
10
-
100
1
10
100
1000
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.10 Collector Output Capacitance
COLLECTOR OUTPUT
CAPACITANCE : Cob (pF)
Ta
=
25
C
f
=
1MHz

Switching characteristics measurement circuits
P
W
V
IN
R
L
=
5
I
C
I
B
1
I
B
2
P
W
50
s
DUTY CYCLE 1%
V
CC
-
25V
Ton
Tstg
Tf
I
C
I
B
2
I
B
1
10%
90%
BASE CURRENT
WAVEFORM
COLLECTOR CURRENT
WAVEFORM
Appendix
Appendix1-Rev1.1


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