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Электронный компонент: 2SA854S

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2SA854S
Transistors
Rev.A
1/3
Medium Power Transistor
(-32V, -0.5A)
2SA854S

Features
1) Large I
C
.
I
CMAX.
= -500mA
2) Low V
CE(sat).
Idea for low-voltage operation.
3) Complements the 2SC1741S.

Structure
Epitaxial planar type
PNP silicon transistor






External dimensions (Unit : mm)
Denotes h
FE
(15Min.)
0.45
0.5
0.45
5
(1) (2) (3)
0.05
0.15
0.15
0.05
2.5
0.4
0.1
3Min.
2SA854S
(1) Emitter
(2) Collector
(3) Base
ROHM : SPT
EIAJ : SC-72
4 0.2
2 0.2
3 0.2
-
+
-
+
-
+


Absolute maximum ratings (Ta=25
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
-
40
V
V
V
A
W
-
32
-
5
-
0.5
0.3
150
-
55 to
+
150
Symbol
Limits
Unit
P
C MAX
. must not be exceeded.
C
C










2SA854S
Transistors
Rev.A
2/3
Electrical characteristics (Ta=25
C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
Cob
Min.
-
40
-
32
-
5
-
-
-
-
-
-
-
-
-
-
-
-
200
-
-
-
-
1
-
1
390
-
0.6
-
-
V
I
C
=
-
100
A
I
C
=
-
1mA
I
E
=
-
100
A
V
CB
=
-
20V
V
EB
=
-
4V
V
CE
=
-
3V, I
C
=
-
100mA
I
C
/I
B
=
-
500mA/
-
50mA
V
CE
=
-
5V, I
E
=
20mA, f
=
100MHz
V
CB
=
-
10V, I
E
=
0A, f
=
1MHz
V
V
A
A
-
120
V
MHz
pF
8
Typ.
Max.
Unit
Conditions
DC current transfer ratio
Transition frequency
Output capacitance

Packaging specifications and h
FE
Package
Code
Basic ordering unit (pieces)
Taping
T146
3000
-
h
FE
QR
2SA854S
Type


h
FE
values are classified as follows :
Item
Q
R
h
FE
120~270
180~390

Electrical characteristic curves
Fig.1 Grounded emitter propagation
-0.2
0
-500
-200
-100
-50
-20
-10
-5
-2
-1
-0.5
-0.2
-0.1
-0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2
V
CE
=
-
3V
COLLECTOR CURRENT : I
C
(
mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Ta
=
100
C
25
C
-
55
C
Fig.2 Grounded emitter output
characteristics ( )
-1
-40
-80
-3
0
-20
-60
-100
0
-2
-4
-5
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Ta
=
25
C
I
B
=
0A
-
0.1mA
-
0.2mA
-
0.3mA
-
0.4mA
-
0.5mA
-
0.6mA
-
0.7mA
-
0.8mA
-
0.9mA
-
1mA
-200
-400
-10
-5
0
-100
-300
-500
0
COLLECTOR CURRENT : I
C
(
mA)
Ta
=
25
C
I
B
=
0A
-
0.5mA
-
1.0mA
-
1.5mA
-
2.0mA
-
2.5mA
-
3.0mA
-
3.5mA
-
4.0mA
-
4.5mA
-
5.0mA
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.3 Grounded emitter output
characteristics ( )







2SA854S
Transistors
Rev.A
3/3
500
1000
200
100
50
20
DC CURRENT GAIN : h
FE
-1
-2
-5 -10 -20
-50 -100 -200 -500 -1000
Ta
=
25
C
V
CE
=
-
5V
-
3V
-
1V
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs.
collector current ( )
500
1000
200
100
50
20
-1
-2
-5 -10 -20
-50 -100 -200 -500 -1000
DC CURRENT GAIN : h
FE
V
CE
=
-
3V
Ta
=
100
C
25
C
-
55
C
COLLECTOR CURRENT : I
C
(mA)
Fig.5 DC current gain vs.
collector current ( )
Fig.6 Collector-emitter saturation
voltage vs. collector current ( )
-0.1
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
-1 -2
-5 -10 -20
-50 -100 -200 -500
-1
-0.5
-0.2
-0.05
-0.02
Ta
=
25
C
COLLECTOR CURRENT : I
C
(mA)
I
C
/I
B
=
50
20
10

-0.05
-0.03
-0.02
-0.01
-1
-2
-5
-10 -20
-50 -100 -200
-500 -1000
-0.5
-0.3
-0.2
-0.1
-1.0
l
C
/l
B
=
10
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
Ta
=
100
C
25
C
-
55
C
COLLECTOR CURRENT : I
C
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( )
50
0.5
20
50
100
200
500
1000
1
2
5
10
Fig.8
Gain bandwidth product vs.
emitter current
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(
MHz)
Ta
=
25
C
V
CE
=
-
5V
COLLECTOR OUTPUT CAPACITANCE : Cob
(
pF)
EMITTER INPUT CAPACITANCE : Cib
(
pF)
-50
-0.5
-20
2
5
10
50
100
-1
-2
-5
-10
20
Ta
=
25
C
f
=
1MHz
I
E
=
0A
I
C
=
0A
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.9 Collector output capacitance vs.
collector-base voltage. Emitter input
capacitance vs. emitter-base voltage
Appendix
Appendix1-Rev1.1


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