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Электронный компонент: 2SB1181

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2SB1260 / 2SB1181 / 2SB1241
Transistors
Power Transistor (
-80V, -1A)
2SB1260 / 2SB1181 / 2SB1241
!Features
1) High breakdown voltage and high
current.
BV
CEO
=
-80V, I
C
=
-1A
2) Good h
FE
linearity.
3) Low V
CE(sat)
.
4) Complements the 2SD1898 /
2SD1863 / 2SD1733.
!
!
!
!Structure
Epitaxial planar type
PNP silicon transistor
!
!
!
!External dimensions
(Units : mm)
2SB1260
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
-
0.1
+0.2
-
0.05
+0.1
-
0.1
+0.2
+0.2
-
0.1
(3)
(2)
(1)
4.0
1.00.2
0.50.1
2.5
3.00.2
1.50.1
1.50.1
0.40.1
0.50.1
0.40.1
0.4
1.5
4.5
1.60.1
0.3
2SB1241
(1) Emitter
(2) Collector
(3) Base
ROHM : ATV
1.0
6.80.2
2.50.2
1.05
0.450.1
2.54 2.54
0.50.1
0.9
4.40.2
14.50.5
(1)
(2)
(3)
0.65Max.
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
2SB1181
-
0.1
+0.2
-
0.1
+0.2
+0.3
-
0.1
2.3
0.2
2.3
0.2
0.65
0.1
0.9
0.75
1.0
0.2
0.55
0.1
9.5
0.5
5.5
1.5
0.3
2.5
1.5
2.3
0.5
0.1
6.5
0.2
5.1
C0.5
(3)
(2)
(1)
0.9
* Denotes h
FE
Abbreviated
symbol: BH
!
!
!
!Absolute maximum ratings
(Ta=25
C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
*1 Single pulse, Pw=100ms
*2 When mounted on a 40
40
0.7 mm ceramic board.
*3
Printed circuit board, 1.7mm thick, collector copper plating 100mm
2
or larger.
Parameter
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
-80
V
V
V
A(DC)
W
C
C
-80
-5
-1
I
CP
A(Pulse)
-2
*1
0.5
2
*2
1
*3
10
2SB1260
2SB1241, 2SB1181
2SB1181
150
-55~+150
Symbol
Limits
Unit
W(Tc=25C)
2SB1260 / 2SB1181 / 2SB1241
Transistors
!
!
!
!Electrical characteristics
(Ta=25
C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
Cob
Min.
-80
-80
-5
-
-
82
2SB1260, 2SB1181
2SB1241
2SB1260, 2SB1241
2SB1181
-
-
-
-
-
-
-
-
-
-
100
25
-
-
-
-1
-1
390
-0.4
-
-
V
I
C
=-50
A
I
C
=-1mA
I
E
=-50
A
V
CB
=-60V
V
EB
=-4V
V
CE
=-3V, I
C
=-0.1A
I
C
/I
B
=-500mA/-50mA
V
CE
=-10V, I
E
=50mA, f=30MHz
V
CB
=-10V, I
E
=0A, f=1MHz
V
V
A
A
-
120
-
390
-
V
MHz
f
T
-
100
-
V
CE
=-5V, I
E
=50mA, f=30MHz
MHz
pF
Typ.
Max.
Unit
Conditions
!
!
!
!Packaging specifications and h
FE
Package
Code
Taping
Basic ordering
unit (pieces)
2500
2500
1000
PQR
h
FE
2SB1260
TL
-
-
-
QR
2SB1241
PQR
2SB1181
-
TV2
-
-
T100
Type
h
FE
values are classified as follows :
Item
P
Q
R
h
FE
82~180
120~270
180~390
!
!
!
!Electrical characteristic curves
Fig.1 Grounded emitter propagation
characteristics
0
-0.1
-1
-100
-1000
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(mA)
-0.8
-1.2
-1.6
-10
-0.2 -0.4
-1.0
-1.4
-0.6
Ta=25C
V
CE
=-5V
Fig.2 Grounded emitter output
characteristics
0
0
-0.2
-0.8
-1.0
-0.4
-0.8
-1.2
-1.6
-0.4
-0.6
-2.0
-0.2
-0.6
-1.0
-1.4
-1.8
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Ta=25C
-0.05mA
I
B
=0mA
-0.1mA
-0.15mA
-0.2mA
-0.25mA
-0.3mA
-0.35mA
-0.4mA
-0.45mA
Fig.3 DC current gain vs.
collector current
-1 -2
-5 -10 -20
-50-100 -200-500
-2000
COLLECTOR CURRENT : I
C
(mA)
10
DC CURRENT GAIN : h
FE
-1000
20
50
100
200
500
1000
V
CE
=-3V
-1V
Ta=25C
2SB1260 / 2SB1181 / 2SB1241
Transistors
Fig.4 Collector-emitter saturation
voltage vs. collector current
-0.01
-0.02
-0.05
-0.1
-0.2
-0.5
-1
-2
Ta=25C
I
C
/I
B
=20
-1 -2
-5 -10 -20
-50-100-200-500
-2000
-1000
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
10
Fig.5 Gain bandwidth product vs.
emitter current
1
2
5
10 20
50 100 200
500 1000
1
2
5
10
20
50
100
200
500
1000
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Ta=25C
V
CE
=-5V
Fig.6 Collector output capacitance
vs. collector-base voltage
-0.2
-0.1
-0.5 -1
-2
-5 -10 -20
-50 -100
1
2
5
10
20
50
100
200
500
1000
Ta=25C
f=1MHz
I
E
=0A
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig. 7 Emitter input capacitance
vs. emitter-base voltage
-0.1
10
20
-0.2
-0.5
-1
-2
200
1000
-5
-10
500
100
50
Ta=25C
f=1MHz
I
C
=0A
EMITTER INPUT CAPACITANCE : Cib

(pF)
EMITTER TO BASE VOLTAGE : V
EB
(V)
-0.5
-2
-1
-5 -10 -20
-50 -100
Fig. 8 Safe operating area
(2SB1260)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
-2
-1
-0.5
-0.2
-0.1
-0.05
Ta=25C
*
Single
nonrepetitive
pulse
I
C Max
. (Pulse)
I
C Max
.
P
W
=
10ms
P
W
=100ms
DC
Fig.9 Safe operating area (2SB1241)
1
2
5
0.1 0.2 0.5
10 20 50 100200 5001000
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
10
5
2
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
Ta=25C
*
Single
nonrepetitive
pulse
I
C Max
. (Pulse)
P
W
=10ms
P
W
=100ms
DC
*
Printed circuit board:
1.7 mm thick with collector
copper plating at least 1 cm
2
.
-0.5
-0.2
-0.1
-1
-2
-20
-10
-5
-50 -100
-0.01
-0.05
-0.02
-0.1
-0.5
-0.2
-1
-5
-2
P
W
=100ms
Ta=25C
*
Single
nonrepetitive
pulse
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.10 Safe operating area
(2SB1181)