2SB1183 / 2SB1239
Transistors
Power transistor (
-40V, -2A)
2SB1183 / 2SB1239
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Features
1) Darlington connection for high DC current gain.
2) Built-in 4k
resistor between base and emitter.
3) Complements the 2SD1759 / 2SD1861.
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Equivalent circuit
R
BE
4k
C
B
E
C
B
E
: Collector
: Base
: Emitter
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Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CBO
V
CER
V
EBO
I
C
P
C
Tj
Tstg
Limits
-
40
-
40
-
5
-
2
1
10
2SB1183
2SB1239
150
-
55~
+
150
Unit
V
V
V
A(DC)
-
3
1
2
A(Pulse)
W
W(Tc
=
25
C)
1
W
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
1 Single pulse Pw
=
10ms
2 Printed circuit board 1.7 mm thick, collector plating 100mm
2
or larger.
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Packaging specifications and h
FE
Type
2SB1183
CPT3
1k~200k
TL
2500
2SB1239
ATV
1k~
T146
2500
Package
h
FE
Code
Basic ordering unit (pieces)
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External dimensions (Units : mm)
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
( 2
)
( 3
)
C0.5
0.65
0.9
( 1
)
0.75
2.3
0.9
1.5
5.5
5.1
(1) Emitter
(2) Collector
(3) Base
0.45
1.05
Taping specifications
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1.0
14.5
0.9
4.4
2.5
2SB1183
ROHM : CPT3
EIAJ : SC-63
2SB1239
ROHM : ATV
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Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CER
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
2SB1183
2SB1239
Cob
-
40
-
40
-
5
-
-
-
1000
-
-
-
-
-
-
-
-
11
-
-
-
-
1
-
1
-
1.5
20000
-
V
V
V
A
A
V
-
pF
I
C
=-
50
A
I
C
=-
1mA, R
BE
=
10k
I
E
=-
50
A
V
CB
=-
24V
V
EB
=-
4V
I
C
/I
B
=-
0.6A/
-
1.2mA
V
CE
/I
C
=-
2V/
-
0.5A
1000
-
-
-
V
CB
=-
10V, I
E
=
0A, f
=
1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Output capacitance
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