2SB1188 / 2SB1182 / 2SB1240
Transistors
Rev.A 1/3
Medium power transistor (
-
32V,
-
2A)
2SB1188 / 2SB1182 / 2SB1240
Features
1) Low V
CE(sat)
.
V
CE(sat)
=
-
0.5V (Typ.)
(I
C
/I
B
=
-
2A /
-
0.2A)
2) Complements the 2SD1766 / 2SD1758 /
2SD1862.
Structure
Epitaxial planar type
PNP silicon transistor
External dimensions (Unit : mm)
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
2SB1188
2SB1240
2SB1182
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
(1) Emitter
(2) Collector
(3) Base
ROHM :
ATV
1.0
6.8
0.2
2.5
0.2
1.05
0.45
0.1
2.54 2.54
0.5
0.1
0.9
4.4
0.2
14.5
0.5
(1)
(2)
(3)
0.65Max.
-
0.1
+
0.2
-
0.05
+
0.1
-
0.1
+
0.2
+
0.2
-
0.1
(3)
(2)
(1)
1.0
0.2
0.5
0.1
4.0
0.3
2.5
3.0
0.2
1.5
0.1
1.5
0.1
0.4
0.1
0.5
0.1
0.4
0.1
0.4
1.5
4.5
1.6
0.1
-
0.1
+
0.2
-
0.1
+
0.2
+
0.3
-
0.1
2.3
0.2
2.3
0.2
0.65
0.1
0.9
0.75
1.0
0.2
0.55
0.1
9.5
0.5
5.5
1.5
0.3
2.5
1.5
2.3
0.5
0.1
6.5
0.2
5.1
C0.5
(3)
(2)
(1)
0.9
Abbreviated symbol: BC
Denotes h
FE
Absolute maximum ratings (Ta=25
C)
1 Single pulse, Pw
=
100ms
2 When mounted on a 40
40
0.7 mm ceramic board.
3 Printed circuit board, 1.7mm thick, collector copper plating 100mm
2
or larger.
Parameter
V
CBO
V
CEO
V
EBO
P
C
Tj
Tstg
-
40
V
V
V
A(DC)
W
W
W (Tc
=
25
C)
W
C
C
-
32
-
5
-
2
I
C
A (Pulse)
-
3
0.5
2
10
1
2
1
3
2SB1188
2SB1182
2SB1240
150
-
55 to 150
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
2SB1188 / 2SB1182 / 2SB1240
Transistors
Rev.A 2/3
Electrical characteristics (Ta=25
C)
Measured using pulse current.
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
-
40
-
32
-
5
-
-
82
-
-
-
-
-
-
-
-
100
50
-
-
-
-
1
-
1
390
-
0.8
-
-
V
I
C
= -
50
A
I
C
= -
1mA
I
E
= -
50
A
V
CB
= -
20V
V
EB
= -
4V
I
C
/I
B
= -
2A/
-
0.2A
V
CE
= -
5V, I
E
=
0.5A, f
=
100MHz
V
CB
= -
10V, I
E
=
0A, f
=
1MHz
V
V
A
A
-
-
V
CE
= -
3V, I
C
= -
0.5A
V
MHz
pF
Typ.
Max.
Unit
Conditions
-
0.5
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Packaging specifications and h
FE
Package
Code
Basic ordering unit (pieces)
Taping
T100
TL
1000
2500
-
-
PQR
h
FE
PQR
2SB1188
2SB1182
-
-
TV2
2500
-
-
PQR
2SB1240
Type
h
FE
values are classified as follows :
Item
P
Q
R
h
FE
82 to 180
120 to 270
180 to 390
Electrical characteristic curves
Fig.1 Grounded emitter propagation
characteristics
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(mA)
0
-
0.2
-
0.6
-
0.8
-
1.0
-
1.2
-
1.4
-
1.6
-
1.8
-
2.0
-
2.2
-
0.4
-
1
-
2
-
5
-
10
-
20
-
50
-
100
-
200
-
500
-
1000
V
CE
= -
3V
Ta
=
100
C
25
C
-
40
C
Fig.2 Grounded emitter output
characteristics
-
0.4
0
-
0.8
-
1.2
-
1.6
-
2
0
-
0.1
-
0.2
-
0.3
-
0.4
-
0.5
I
B
=
0A
-
250
A
-
500
A
-
750
A
-
1mA
-
1.25mA
-
1.5mA
-
1.75mA
-
2mA
-
2.25mA
-
2.5mA
COLLECTOR
CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Ta
=
25
C
Fig.3 DC current gain vs.
collector curren ( )
DC CURRENT GAIN : h
FE
-
5
-
10
-
20
-
50
-
100
-
500
-
1000
-
2000
-
200
50
20
100
200
500
Ta
=
25
C
COLLECTOR CURRENT : I
C
(mA)
V
CE
= -
6V
-
3V
-
1V
2SB1188 / 2SB1182 / 2SB1240
Transistors
Rev.A 3/3
Fig.6 Collector-emitter saturation
voltage vs. collector current ( )
-
5
-
10
-
20
-
50
-
100
-
500
-
1000
-
2000
-
200
-
20
-
50
-
100
-
200
-
500
l
C
/l
B
=
10
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
Ta
=
100
C
25
C
-
40
C
Fig.5 Collector-emitter saturation
voltage vs. collector current ( )
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
-
5
-
10
-
20
-
50
-
100
-
500
-
1000
-
2000
-
200
-
50
-
100
-
200
-
500 Ta
=
25
C
I
C
/I
B
=
50
20
10
Fig.4 DC current gain vs.
collector current ( )
50
20
100
200
500
DC CURRENT GAIN : h
FE
V
CE
= -
3V
COLLECTOR CURRENT : I
C
(mA)
-
5
-
10
-
20
-
50
-
100
-
500
-
1000
-
2000
-
200
Ta
=
100
C
25
C
-
25
C
Fig.7 Base-emitter saturation voltage
vs. collector current
COLLETOR CURRENT : I
C
(mA)
BASE SATURATION VOLTAGE : V
BE(sat)
(V)
-
5
-
10
-
20
-
50
-
100
-
500
-
1000
-
2000
-
200
-
0.1
-
0.05
-
0.2
-
0.5
-
1
I
C
/I
B
=
10
Ta
=
25
C
Fig.8 Gain bandwidth product vs.
emitter current
Ta
=
25
C
V
CE
= -
5V
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
5
10
20
50
100
500 1000 2000
200
50
100
200
500
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
EMITTER INPUT CAPACITANCE
: Cib
(pF)
Ta
=
25
C
f
=
1MHz
I
E
=
0A
I
C
=
0A
-
0.5
-
1
-
2
-
5
-
10
-
20
-
30
10
20
50
200
300
100
Cib
Cob
Fig.10 Safe operation area
(2SB1188)
-
0.5
-
0.2
-
0.1
-
1
-
2
-
10
-
5
-
20
-
50
-
0.01
-
0.05
-
0.02
-
0.1
-
0.5
-
0.2
-
1
-
2
-
5
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
DC
P
w
=
100ms
P
w
=
10ms
Ta
=
25
C
Single
nonrepetitive
pulse
I
C Max. (pulse)
Fig.11 Safe operation area
(2SB1182)
-
0.5
-
0.2
-
0.1
-
1
-
2
-
10
-
5
-
20
-
50
-
0.01
-
0.05
-
0.02
-
0.1
-
0.5
-
0.2
-
1
-
2
-
5
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Ta=25
C
Single
nonrepetitive
pulse
I
C Max
. (Pulse)
DC
P
W
=500
s
P
W
=100ms
P
W
=1ms
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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