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Электронный компонент: 2SB1189

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2SB1189 / 2SB1238
Transistors
Rev.A
1/2
Medium power transistor (
-
80V,
-
0.7A)
2SB1189 / 2SB1238

Features
1) High breakdown voltage, BV
CEO
=
-
80V, and
high current, I
C
=
-
0.7A.
2) Complements the 2SD1767 / 2SD1859.

Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
-
80
-
80
-
5
-
0.7
2
1
150
-
55 to
+
150
Unit
V
V
V
A
0.5
2
1
2SB1238
2SB1189
W
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power
dissipation
1 When mounted on a 40
40
0.7 mm ceramic board.
2 Printed circuit board 1.7 mm thick, collector plating 1cm
2
or larger.

Packaging specifications and h
FE
Type
2SB1189
MPT3
QR
BD
T100
1000
2SB1238
ATV
QR
-
TV2
2500
Denotes h
FE
Package
h
FE
Marking
Code
Basic ordering unit (pieces)


External dimensions (Unit : mm)
(1) Emitter
(2) Collector
(3) Base
0.45
1.05
Taping specifications
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1.0
14.5
0.9
4.4
2.5
2SB1189
ROHM : MPT3
EIAJ : SC-62
2SB1238
ROHM : ATV
(1) Base
(2) Collector
(3) Emitter
1.5
0.4
1.5
0.4
1.6
0.5
3.0
0.4
1.5
(3)
4.5
(1)
(2)
0.5
4.0
2.5
1.0

Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
f
T
Cob
-
80
-
80
-
5
-
-
-
-
-
-
-
-
-
-
-
0.2
100
14
-
-
-
-
0.5
-
0.5
-
0.4
-
20
V
V
V
A
A
V
MHz
pF
I
C
=-
50
A
I
C
=-
2mA
I
E
=-
50
A
V
CB
=-
50V
V
EB
=-
4V
h
FE
120
-
390
-
V
CE
/I
C
=-
3V/
-
0.1A
I
C
/I
B
=-
500mA/
-
50mA
V
CE
=-
10V, I
E
=
50mA, f
=
100MHz
V
CB
=-
10V, I
E
=
0A, f
=
1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
2SB1189 / 2SB1238
Transistors
Rev.A
2/2
Electrical characteristics curves
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Ground emitter output characteristics
0
-
1.0
-
0.8
-
0.6
-
0.4
-
0.2
-
10
-
8
-
6
-
4
-
2
0
Ta
=
25
C
I
B
=
0mA
-
1mA
-
2mA
-
3mA
-
4mA
-
5mA
-
6mA
-
7mA
-
8mA
-
10mA
-
9mA
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.2 Ground emitter propagation characteristics
-
50
-
10
-
5
-
2
-
1
-
0.5
-
0.1
-
0.2
-
20
-
1.4
-
1.6
-
1.2
-
1.0
-
0.8
-
0.6
-
0.4
-
0.2
0
Ta
=
25
C
V
CE
= -
6V
COLLECTOR CURRENT : I
C
(mA)
DC CURRENT GAIN : h
FE
Fig.3 DC current gain vs. collector current
50
100
200
500
-
200
-
100
-
20
-
10
-
1
-
2
-
5
-
50
-
500
Ta
=
25
C
V
CE
= -
5V
-
1V
-
3V

EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.5 Gain bandwidth product vs. emitter current
500
200
20
50
100
10
5
2
20
50
Ta
=
25
C
V
CE
=
-
5V
EMITTER TO BASE VOLTAGE : V
EB
(V)
EMITTER INPUT CAPACITANCE : C
ib
(pF)
Fig.7 Emitter input capacitance
vs. emitter-base voltage
-
20
-
10
10
20
50
100
-
2
-
1
-
0.5
-
5
I
C
=
0A
Cib
f
=
1MHz
Ta
=
25
C
COLLECTOR TO BASE VOLTAGE : V
CE
(V)
COLLECTOR OUTPUT CAPACITANCE : C
ob
(pF)
Fig.6 Collector output capacitance
-
20
-
10
10
20
50
100
-
2
-
1
-
0.5
-
5
vs. collector-base voltage
I
E
=
0A
Cob
f
=
1MHz
Ta
=
25
C
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
Fig.4 Collector-emitter saturation voltage
vs.collector current
-
0.2
-
0.1
-
0.05
-
0.02
-
0.01
-
200
-
100
-
20
-
10
-
1
-
5
-
50
-
500
I
C
/I
B
=
20/1
I
C
/I
B
=
10/1
Ta
=
25
C
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.8 Safe operating area (2SB1189)
-
1.0
-
0.2
-
0.1
-
0.02
-
0.01
-
0.002
-
0.005
-
0.001
-
0.05
-
0.5
-
100
-
20
-
10
-
2
-
1
-
0.1
-
0.2
-
0.5
-
5
-
50
Ta
=
25
C
Single pulse
Pw
=
10ms
Pw
=
10ms
DC
Appendix
Appendix1-Rev1.1


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