2SB1197K

Transistors

Rev.A

1/2

Low Frequency Transistor (

32V,

0.8A)

2SB1197K

Features

1) Low V

CE(sat)

0.5V

/ I

0.5A /

50mA

2) I

0.8A.

3) Complements the 2SD1781K.

Structure

Epitaxial planar type
PNP silicon transistor

External dimensions (Unit : mm)

Abbreviated symbol: AH

All terminals have the

same dimensions

(1) Emitter
(2) Base
(3) Collector

ROHM : SMT3
EIAJ : SC-59

0.1

2.8

0.2

1.6

0.3

0.6

1.1

0.8

0.1

0.15

0.4

2.9

0.2

1.9

0.2

0.95 0.95

0.2

0.1

0.2

0.1

0.06

0.1

0.05

(2)

(1)

(3)

Denotes h

Absolute maximum ratings (Ta=25

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Parameter

CBO

CEO

EBO

Tstg

0.8

0.2

150

55 to 150

Symbol

Limits

Unit

Electrical characteristics (Ta=25

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

Output capacitance

Parameter

Symbol

CBO

CEO

EBO

CBO

EBO

CE(sat)

Cob

Min.

-
-

120

-
-
-
-
-

200

-
-
-

0.5

390

0.5

= -

1mA

= -

20V

= -

3V, I

= -

100mA

= -

0.5A/

50mA

= -

5V, I

50mA, f

100MHz

= -

10V, I

0A, f

1MHz

MHz

Typ.

Max.

Unit

Conditions

2SB1197K

Transistors

Rev.A

2/2

Packaging specifications and h

Package

Code

Basic ordering unit (pieces)

Taping

T146

3000

2SB1197K

Type

values are classified as follows :

Item

120 to 270

180 to 390

Electrical characteristic curves

Fig.1 Grounded emitter propagation

characteristics

0.4

0.8

1.2

1.6

1000

500

200

100

0.5

0.2

0.1

COLLECTOR CURRENT : I

(mA)

BASE TO EMITTER VOLTAGE : V

(V)

Fig.2 Grounded emitter output

characteristics ( )

120

160

200

100

140

180

1.0mA

0.9mA

0.8mA

0.7mA

0.6mA

0.5mA

0.4mA

0.3mA

0.2mA

0.1mA

0mA

COLLECTOR CURRENT : I

(mA)

COLLECTOR TO EMITTER VOLTAGE : V

(V)

Fig.3 Grounded emitter output

characteristics ( )

0.2

0.4

0.6

0.8

1.0

100

300

200

400

500

12mA

10mA

8mA

6mA

4mA

2mA

14mA

16mA

18mA

20mA

COLLECTOR CURRENT : I

(mA)

COLLECTOR TO EMITTER VOLTAGE : V

(V)

Fig.4 DC current gain vs.

collector current

10m

100m

100

200

500

= -

DC CURRENT GAIN : h

COLLECTOR CURRENT : I

(A)

Fig.5 Collector-emitter saturation

voltage vs. collector current

COLLECTOR SATURATION VOLTAGE : V

CE (sat)

(mV)

COLLECTOR CURRENT : I

(A)

10m

100m

200

100

500

1000

Fig.6 Gain bandwidth product vs.

emitter current

EMITTER CURRENT : I

(A)

TRANSITION FREQUENCY : f

(MHz)

= -

10m

100m

100

200

500

1000

Fig.7 Collector output capacitance vs.

collector-base voltage
Emitter input capacitance vs.
emitter-base voltage

COLLECTOR TO BASE VOLTAGE : V

(V)

EMITTER TO BASE VOLTAGE : V

(V)

COLLECTOR OUTPUT CAPACITANCE : Cob

(pF)

EMITTER INPUT CAPACITANCE

: Cib

(pF)

1MHz

0.1

100

200

500

1000

Appendix

Appendix1-Rev1.1

The products listed in this document are designed to be used with ordinary electronic equipment or devices

(such as audio visual equipment, office-automation equipment, communications devices, electrical

appliances and electronic toys).

Should you intend to use these products with equipment or devices which require an extremely high level of

reliability and the malfunction of with would directly endanger human life (such as medical instruments,

transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other

safety devices), please be sure to consult with our sales representative in advance.

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any

means without prior permission of ROHM CO.,LTD.

The contents described herein are subject to change without notice. The specifications for the

product described in this document are for reference only. Upon actual use, therefore, please request

that specifications to be separately delivered.

Application circuit diagrams and circuit constants contained herein are shown as examples of standard

use and operation. Please pay careful attention to the peripheral conditions when designing circuits

and deciding upon circuit constants in the set.

Any data, including, but not limited to application circuit diagrams information, described herein

are intended only as illustrations of such devices and not as the specifications for such devices. ROHM

CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any

third party's intellectual property rights or other proprietary rights, and further, assumes no liability of

whatsoever nature in the event of any such infringement, or arising from or connected with or related

to the use of such devices.

Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or

otherwise dispose of the same, no express or implied right or license to practice or commercially

exploit any intellectual property rights or other proprietary rights owned or controlled by

ROHM CO., LTD. is granted to any such buyer.

Products listed in this document are no antiradiation design.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Document Outline

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: 2SB1197K

Document Outline

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: 2SB1197K