2SB1386 / 2SB1412 / 2SB1326

Transistors

Rev.A 1/4

Low frequency transistor (

20V,

5A)

2SB1386 / 2SB1412 / 2SB1326

Features

1) Low V

CE(sat)

0.35V (Typ.)

4A /

0.1A)

2) Excellent DC current gain characteristics.
3) Complements the 2SD2098 / 2SD2118 /

2SD2097.

Structure

Epitaxial planar type
PNP silicon transistor

External dimensions (Unit : mm)

(1) Base
(2) Collector
(3) Emitter

ROHM : CPT3
EIAJ : SC-63

2SB1386

2SB1326

2SB1412

(1) Base
(2) Collector
(3) Emitter

ROHM : MPT3
EIAJ : SC-62

(1) Emitter
(2) Collector
(3) Base

ROHM :

ATV

1.0

6.8

0.2

2.5

0.2

1.05

0.45

0.1

2.54 2.54

0.5

0.1

0.9

4.4

0.2

14.5

0.5

(1)

(2)

(3)

0.65Max.

0.3

0.1

0.2

0.05

0.1

0.2

0.1

(3)

(2)

(1)

4.0

1.0

0.2

0.5

0.1

2.5

3.0

0.2

1.5

0.1

1.5

0.1

0.4

0.1

0.5

0.1

0.4

0.1

0.4

1.5

4.5

1.6

0.1

0.2

0.1

0.2

0.3

0.1

2.3

0.2

2.3

0.2

0.65

0.1

0.9

0.75

1.0

0.2

0.55

0.1

9.5

0.5

5.5

1.5

0.3

2.5

1.5

2.3

0.5

0.1

6.5

0.2

5.1

C0.5

(3)

(2)

(1)

0.9

Denotes h

Abbreviated symbol: BH

2SB1386 / 2SB1412 / 2SB1326

Transistors

Rev.A 2/4

Absolute maximum ratings (Ta=25

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power
dissipation

Junction temperature

Storage temperature

1 Single pulse, Pw

10ms

2 When mounted on a 40

0.7 mm ceramic board.

3 Printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm

or larger.

Parameter

CBO

CEO

EBO

Tstg

A(DC)

A(Pulse)

0.5

W(Tc

2SB1386

2SB1412

2SB1326

150

55 to 150

Symbol

Limits

Unit

Electrical characteristics (Ta=25

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current
transfer ratio

Collector-emitter saturation voltage

Output capacitance

Measured using pulse current.

Parameter

Symbol

CBO

CEO

EBO

CBO

EBO

CE(sat)

Cob

Min.

-
-

2SB1386,2SB1412

2SB1326

-
-

-
-
-
-
-

120

0.35

-
-
-

0.5

390

1.0

-
-

= -

1mA

= -

20V

= -

2V, I

= -

0.5A

= -

4A/

0.1A

= -

6V, I

50mA, f

100MHz

= -

20V, I

0A, f

1MHz

120

390

MHz

Typ.

Max.

Unit

Conditions

Transition frequency

Packaging specifications and h

Package

Code

Taping

Basic ordering
unit (pieces)

T100

1000

2500

PQR

2SB1386

TV2

2500

-
-

PQR

2SB1412

2SB1326

Type

values are classified as follows :

Item

82 to 180

120 to 270

180 to 390

2SB1386 / 2SB1412 / 2SB1326

Transistors

Rev.A 3/4

Electrical characteristic curves

Fig.1 Grounded emitter propagation

characteristics

COLLECTOR CURRENT : I

(A)

BASE TO EMITTER VOLTAGE : V

(V)

1.4

1.2

1.0

0.8

0.6

0.4

0.2

10m

20m

200m

100m

50m

500m

100

Fig.2 Grounded emitter output

characteristics

COLLECTOR CURRENT : I

(A)

COLLECTOR TO EMITTER VOLTAGE : V

(V)

0.4

0.8

1.2

1.6

2.0

20mA

25mA

30mA

10mA

5mA

15mA

50mA

45mA

40mA

35mA

Fig.3 DC current gain vs.

collector current ( )

DC CURRENT GAIN : h

COLLECTOR CURRENT : I

(A)

Ta=25

0.01

0.05

100

200

500

0.02

0.1

0.5

0.2

Fig.4 DC current gain vs.

collector current ( )

DC CURRENT GAIN : h

COLLECTOR CURRENT : I

(A)

= -

0.01

0.05

100

200

500

0.02

0.1

0.5

0.2

100

Fig.5 DC current gain vs.

collector current ( )

DC CURRENT GAIN : h

COLLECTOR CURRENT : I

(A)

0.01

0.05

100

200

500

0.02

0.1

0.5

0.2

100

= -

Fig.6 Collector-emitter saturation

voltage vs. collector current ( )

50/1

40/1

30/1

10/1

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V)

COLLECTOR CURRENT : I

(A)

0.0

-0.02

0.1

0.2

0.5

0.05

0.01

0.5

0.2

0.1

0.05

0.02

Fig.7 Collector-emitter saturation

voltage vs. collector current ( )

100

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V)

COLLECTOR CURRENT : I

(A)

0.01

0.02

0.1

0.2

0.5

0.05

0.01

0.5

0.2

0.1

0.05

0.02

Fig.8 Collector-emitter saturation

voltage vs. collector current ( )

100

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V)

COLLECTOR CURRENT : I

(A)

0.01

0.02

0.1

0.2

0.5

0.05

0.01

0.5

0.2

0.1

0.05

0.02

Fig.9 Collector-emitter saturation

voltage vs. collector current ( )

100

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V)

COLLECTOR CURRENT : I

(A)

0.01

0.02

0.1

0.2

0.5

0.05

0.01

0.5

0.2

0.1

0.05

0.02

2SB1386 / 2SB1412 / 2SB1326

Transistors

Rev.A 4/4

Fig.10 Collector-emitter saturation

voltage vs. collector current ( )

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V)

COLLECTOR CURRENT : I

(A)

0.01

0.02

0.1

0.2

0.5

0.05

0.01

0.5

0.2

0.1

0.05

0.02

100

Fig.11 Gain bandwidth product

vs. emitter current

EMITTER CURRENT : I

(mA)

TRANSEITION FREQUENCY : f

(MHz)

50 100 200

500

100

200

500

1 000

1000

= -

Fig.12 Collector output capacitance

vs. collector-base voltage

COLLECTOR OUTPUT CAPACITANCE : Cob

(pF)

COLLECTOR TO BASE VOLTAGE : V

(V)

0.1

0.2

0.5

1000

500

200

100

1MHz

Fig.13 Emitter input capacitance

vs. emitter-base voltage

EMITTER

INTPUT CAPACITANCE : Cib

(pF)

EMITTER TO BASE VOLTAGE : V

(V)

100

200

500

1000

0.1

0.2

0.5

1MHz

COLLECTOR TO EMITTER VOLTAGE :

(V)

COLLECTOR CURRENT : I

(A)

0.2 0.5 1

5 10 20

50 100

500

200

200m

100m

50m

20m
10m

500m

100

Fig.14 Safe operation area

(2SB1412)

Single

nonrepetitive
pulse

10ms

100ms

Appendix

Appendix1-Rev1.1

The products listed in this document are designed to be used with ordinary electronic equipment or devices

(such as audio visual equipment, office-automation equipment, communications devices, electrical

appliances and electronic toys).

Should you intend to use these products with equipment or devices which require an extremely high level of

reliability and the malfunction of with would directly endanger human life (such as medical instruments,

transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other

safety devices), please be sure to consult with our sales representative in advance.

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any

means without prior permission of ROHM CO.,LTD.

The contents described herein are subject to change without notice. The specifications for the

product described in this document are for reference only. Upon actual use, therefore, please request

that specifications to be separately delivered.

Application circuit diagrams and circuit constants contained herein are shown as examples of standard

use and operation. Please pay careful attention to the peripheral conditions when designing circuits

and deciding upon circuit constants in the set.

Any data, including, but not limited to application circuit diagrams information, described herein

are intended only as illustrations of such devices and not as the specifications for such devices. ROHM

CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any

third party's intellectual property rights or other proprietary rights, and further, assumes no liability of

whatsoever nature in the event of any such infringement, or arising from or connected with or related

to the use of such devices.

Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or

otherwise dispose of the same, no express or implied right or license to practice or commercially

exploit any intellectual property rights or other proprietary rights owned or controlled by

ROHM CO., LTD. is granted to any such buyer.

Products listed in this document are no antiradiation design.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

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Document Outline

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Document Outline

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