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Электронный компонент: 2SB1436

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2SB1386 / 2SB1412 / 2SB1326
Transistors
Low frequency transistor (
-20V, -5A)
2SB1386 / 2SB1412 / 2SB1326
!
!
!
!
Features
1) Low V
CE(sat)
.
V
CE(sat)
=
-0.35V (Typ.)
(I
C
/I
B
=
-4A / -0.1A)
2) Excellent DC current gain
characteristics.
3) Complements the 2SD2098 /
2SD2118 / 2SD2097.
!
!
!
!
Structure
Epitaxial planar type
PNP silicon transistor
!
!
!
!
External dimensions (Units : mm)
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
2SB1386
2SB1326
2SB1412
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
(1) Emitter
(2) Collector
(3) Base
ROHM :
ATV
1.0
6.8
0.2
2.5
0.2
1.05
0.45
0.1
2.54 2.54
0.5
0.1
0.9
4.4
0.2
14.5
0.5
(1)
(2)
(3)
0.65Max.
0.3
-
0.1
+
0.2
-
0.05
+
0.1
-
0.1
+
0.2
+
0.2
-
0.1
(3)
(2)
(1)
4.0
1.0
0.2
0.5
0.1
2.5
3.0
0.2
1.5
0.1
1.5
0.1
0.4
0.1
0.5
0.1
0.4
0.1
0.4
1.5
4.5
1.6
0.1
-
0.1
+
0.2
-
0.1
+
0.2
+
0.3
-
0.1
2.3
0.2
2.3
0.2
0.65
0.1
0.9
0.75
1.0
0.2
0.55
0.1
9.5
0.5
5.5
1.5
0.3
2.5
1.5
2.3
0.5
0.1
6.5
0.2
5.1
C0.5
(3)
(2)
(1)
0.9
Denotes h
FE
Abbreviated symbol: BH
2SB1386 / 2SB1412 / 2SB1326
Transistors
!
!
!
!
Absolute maximum ratings (Ta=25
C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
1 Single pulse, Pw=10ms
2 When mounted on a 40
40
0.7 mm ceramic board.
3 Printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm
2
or larger.
Parameter
V
CBO
V
CEO
V
EBO
P
C
Tj
Tstg
-
30
V
V
V
A(DC)
C
C
-
20
-
6
-
5
I
C
A(Pulse)
-
10
1
3
2
0.5
2
W
W
W
1
10
W(T
C
=
25
C)
1
W
2SB1386
2SB1412
2SB1326
150
-
55
~
+
150
Symbol
Limits
Unit
!
!
!
!
Electrical characteristics (Ta=25
C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current
transfer ratio
Collector-emitter saturation voltage
Output capacitance
Measured using pulse current.
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
-
30
-
20
-
6
-
-
82
2SB1386,2SB1412
2SB1326
-


-
-
-
-
-
-
-
-
-
120
60
-
-
-
-
0.5
-
0.5
390
-
1.0
-
-
V
I
C
=-
50
A
I
C
=-
1mA
I
E
=-
50
A
V
CB
=-
20V
V
EB
=-
5V
V
CE
=-
2V, I
C
=-
0.5A
I
C
/I
B
=-
4A/
-
0.1A
V
CE
=-
6V, I
E
=
50mA, f
=
30MHz
V
CB
=-
20V, I
E
=
0A, f
=
1MHz
V
V
A
A
-
120
-
390
-
V
MHz
pF
Typ.
Max.
Unit
Conditions
Transition frequency
!
!
!
!
Packaging specifications and h
FE
Package
Code
Taping
Basic ordering
unit (pieces)
T100
TL
1000
2500
-
PQR
h
FE
2SB1386
-
TV2
2500
-
-
PQR
2SB1412
-
-
QR
2SB1326
Type
h
FE
values are classified as follows :
Item
P
Q
R
h
FE
82
~180
120
~270
180
~390
2SB1386 / 2SB1412 / 2SB1326
Transistors
!
!
!
!
Electrical characteristic curves
Fig.1 Grounded emitter propagation
characteristics
COLLECTOR CURRENT : I
C
(A)
BASE TO EMITTER VOLTAGE : V
BE
(V)
0
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
-1m
-2m
-5m
-10m
-20m
-200m
-100m
-50m
-500m
-1
-2
-10
-5
V
CE
=
-
2V
25
C
-
25
C
Ta
=
100
C
Fig.2 Grounded emitter output
characteristics
COLLECTOR CURRENT : I
C

(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
0
-0.4
-0.8
-1.2
-1.6
-2.0
-1
-2
-3
-5
-4
0
I
B
=
0A
-
20mA
-
25mA
-
30mA
-
10mA
-
5mA
-
15mA
Ta
=
25
C
-
50mA
-
45mA
-
40mA
-
35mA
Fig.3 DC current gain vs.
collector current (
)
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(A)
Ta
=
25
C
-
2V
V
CE
=-
5V
-
1V
-1m
-5m-0.01
-0.05
-1 -2
-5 -10
-2m
100
200
500
1k
2k
5k
50
20
10
5
-0.02
-0.1
-0.5
-0.2
Fig.4 DC current gain vs.
collector current (
)
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(A)
V
CE
=-
1V
-1m
-5m-0.01
-0.05
-1 -2
-5 -10
-2m
100
200
500
1k
2k
5k
50
20
10
5
-0.02
-0.1
-0.5
-0.2
25
C
-
25
C
Ta
=
100
C
Fig.5 DC current gain vs.
collector current (
)
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(A)
-1m
-5m-0.01
-0.05
-1 -2
-5 -10
-2m
100
200
500
1k
2k
5k
50
20
10
5
-0.02
-0.1
-0.5
-0.2
25
C
-
25
C
Ta
=
100
C
V
CE
=-
2V
Fig.6 Collector-emitter saturation
voltage vs. collector current (
)
I
C
/I
B
=
50/1
/1
Ta
=
25
C
40/1
30/1
10/1
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(A)
-1 -2
-5 -10
-0.01-0.02
-0.1 -0.2 -0.5
-0.05
-2m -5m
-0.01
-2
-1
-0.5
-0.2
-0.1
-0.05
-0.02
-5
Fig.7 Collector-emitter saturation
voltage vs. collector current (
)
Ta
=
100
C
25
C
l
C
/l
B
=
10
-
25
C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(A)
-1 -2
-5 -10
-0.01-0.02
-0.1 -0.2 -0.5
-0.05
-2m -5m
-0.01
-2
-1
-0.5
-0.2
-0.1
-0.05
-0.02
-5
Fig.8 Collector-emitter saturation
voltage vs. collector current (
)
Ta
=
100
C
-
25
C
25
C
l
C
/l
B
=
30
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(A)
-1 -2
-5 -10
-0.01-0.02
-0.1 -0.2 -0.5
-0.05
-2m -5m
-0.01
-2
-1
-0.5
-0.2
-0.1
-0.05
-0.02
-5
Fig.9 Collector-emitter saturation
voltage vs. collector current (IV)
Ta
=
100
C
-
25
C
25
C
l
C
/l
B
=
40
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(A)
-1 -2
-5 -10
-0.01-0.02
-0.1 -0.2 -0.5
-0.05
-2m -5m
-0.01
-2
-1
-0.5
-0.2
-0.1
-0.05
-0.02
-5
2SB1386 / 2SB1412 / 2SB1326
Transistors
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(A)
-1 -2
-5 -10
-0.01-0.02
-0.1 -0.2 -0.5
-0.05
-2m -5m
-0.01
-2
-1
-0.5
-0.2
-0.1
-0.05
-0.02
-5
-
25
C
25
C
Ta
=
100
C
l
C
/l
B
=
50
Fig.10 Collector-emitter saturation
voltage vs. collector current (V)
Fig.11 Gain bandwidth product
vs. emitter current
EMITTER CURRENT : I
E
(mA)
TRANSEITION FREQUENCY : f
T
(MHz)
1
2
5
10
50 100 200
500
20
20
50
100
200
500
1 000
10
5
2
1
1000
Ta
=
25
C
V
CE
=-
6V
Fig.12 Collector output capacitance
vs. collector-base voltage
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
-0.1 -0.2
-0.5
-1
-2
-5
-10 -20
-50
1000
500
200
100
50
10
20
Ta
=
25
C
f
=
1MHz
I
E
=
0A
Fig.13 Emitter input capacitance
vs. emitter-base voltage
EMITTER
INTPUT CAPACITANCE : Cib (
pF)
EMITTER TO BASE VOLTAGE : V
EB
(V)
10
20
50
100
200
500
1000
-0.1
-0.2
-0.5
-1
-2
-5
-10
Ta
=
25
C
f
=
1MHz
I
C
=
0A
COLLECTOR TO EMITTER VOLTAGE :
-
V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
0.2 0.5 1
2
5 10 20
50 100
500
200
50
5
20
2
10
1
200m
100m
50m
20m
10m
500m
100
Fig.14 Safe operation area
(2SB1412)
DC
Ta
=
25
C
Single
nonrepetitive
pulse
Pw
=
10ms
Pw
=
100ms