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Электронный компонент: 2SB1580

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2SB1580 / 2SB1316
Transistors
Rev.A
1/2
Power Transistor (
-
100V ,
-
2A)
2SB1580 / 2SB1316


Features
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SD2195 / 2SD1980.

Absolute maximum ratings (Ta = 25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
-
100
-
100
-
8
-
2
2
1
150
-
55 to
+
150
Unit
V
V
V
A(DC)
-
3
1
A(Pulse)
W
10
2
W(Tc
=
25
C)
2SB1580
2SB1316
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
C
1 Single pulse Pw
=
100ms
2 When mounted on a 40 x 40 x 0.7 mm ceramic board.

Packaging specifications and h
FE
Type
2SB1580
MPT3
1k to 10k
T100
1000
BN
2SB1316
CPT3
1k to 10k
TL
2500
-
Denotes h
FE
Package
h
FE
Code
Basic ordering unit (pieces)
Marking

Equivalent circuit
R
1
3.5k
R
2
300
B
C
E
C
B
E
: Base
: Collector
: Emitter
R
1
R
2
External dimensions (Unit : mm)
2SB1316
2SB1580
(3) Emitter
(2) Collector
(1) Base
EIAJ : SC-62
(3) Emitter
(2) Collector
(1) Base
ROHM : CPT3
EIAJ : SC-63
1.5
0.4
1.5
0.4
1.6
0.5
3.0
0.4
1.5
(3)
4.5
(1)
(2)
0.5
4.0
2.5
1.0
ROHM : MPT3
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
( 2
)
( 3
)
C0.5
0.65
0.9
( 1
)
0.75
2.3
0.9
1.5
5.5
5.1
Electrical characteristics (Ta = 25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
I
CBO
I
EBO
Cob
-
100
-
100
-
-
-
-
-
-
-
35
-
-
-
10
-
3
-
V
V
A
mA
pF
MHz
I
C
= -
50
A
I
C
= -
5mA
V
CB
= -
100V
V
EB
= -
7V
V
CE(sat)
-
-
-
1.5
V
I
C
/I
B
= -
1A/
-
1mA
h
FE
1000
-
10000
-
V
CE
= -
2V , I
C
= -
1A
V
CB
= -
10V , I
E
=
0A , f
=
1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BV
EBO
-
10
-
-
V
I
E
= -
5mA
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Output capacitance
Collector-emitter saturation voltage
DC current transfer ratio
f
T
50
-
-
V
CE
= -
5V , I
E
=
0.1A , f
=
30MHz
Transition frequency
Measured using pulse current.
2SB1580 / 2SB1316
Transistors
Rev.A
2/2
Electrical characteristics curve
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.2 Grounded emitter propagation
characteristics
-
10
-
2
-
1
-
0.5
-
0.2
-
0.1
-
0.01
-
0.02
-
0.05
-
5
-
2.8
-
2.4
-
2.0
-
1.6
-
1.2
-
0.8
-
0.4
0
Ta
=
25
C
V
CE
= -
2V
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter output characteristics
0
-
2.0
-
1.6
-
1.2
-
0.8
-
0.4
-
5
-
4
-
3
-
2
-
1
0
Ta
=
25
C
I
B
= -
0.3mA
-
0.4mA
-
1mA
-
0.9mA
-
0.8mA
-
0.6mA
-
0.5mA
-
0.7mA
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
EF
Fig.3 DC current gain vs. collector current
200
500
1k
2k
5k
10k
100
50
20
10
-
10
-
2
-
1
-
0.2
-
0.1
-
0.01
-
0.02
-
0.05
-
0.5
-
5
Ta
=
25
C
V
CE
= -
2V
COLLECTOR CURRENT : I
C
(A)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
Fig.4 Collector-emitter saturation voltage
vs. collector current
-
50
-
20
-
10
-
2
-
1
-
0.1
-
0.2
-
0.5
-
5
-
10
-
2
-
1
-
0.2
-
0.1
-
0.05
-
0.5
-
5
Ta
=
25
C
I
C
/ I
B
=
1000
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
COLLECTOR OUTPUT CAPACITANCE: C
ob
(pF)
Fig.5 Collector output capacitance
vs. collector-base voltage
20
50
100
200
500
1000
10
5
2
1
-
100
-
20
-
10
-
2
-
1
-
0.1
-
0.2
-
0.5
-
5
-
50
Ta
=
25
C
I
E
=
0A
f
=
1MHz
Fig.6 Safe Operating area (2SB1580)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
10m
20m
50m
100m
200m
500m
1
2
5
10
20
50
0.2
0.5 1
2
5 10
20 50 100 200 500
Ic Max. (Pulse
)
DC
Pw=10ms
Pw
=
100ms
Ta=25
C
Single
NONREPETITIVE
PULSE

Fig.7 Safe Operating area (2SB1316)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
10m
20m
50m
100m
200m
500m
1
2
5
10
20
50
0.2
0.5 1
2
5 10
20 50 100 200 500
Ic Max. (Pulse
)
DC
Pw=10ms
Pw
=
100ms
Ta=25
C
Single
NONREPETITIVE
PULSE
Appendix
Appendix1-Rev1.1


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