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Электронный компонент: 2SC1741S

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2SC1741S
Transistors
Rev.A 1/3
Medium Power Transistor (32V, 0.5A)
2SC1741S


Features
1) High I
CMax
.
I
CMax
.
=
0.5A
2) Low V
CE(sat)
.
Optimal for low voltage operation.
3) Complements the
2SA1036K / 2SA1577 / 2SA854S.

Structure
Epitaxial planar type
NPN silicon transistor





External dimensions (Units : mm)
3
0.2
(15Min.)
4
0.2
2
0.2
0.45
0.5
0.45
5
(1) (2) (3)
-
0.05
+
0.15
+
0.15
-
0.05
2.5
+
0.4
-
0.1
3Min.
(1) Emitter
(2) Collector
(3) Base
ROHM : SPT
EIAJ : SC-72
2SC1741S
Denotes h
FE
Absolute maximum ratings (Ta = 25
C)
Parameter
V
CBO
V
CEO
V
EBO
P
C
Tj
Tstg
40
V
V
V
A
W
C
C
32
5
0.5
I
C
0.3
150
-
55 to
+
150
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
P
C
must not be exceeded.










2SC1741S
Transistors
Rev.A 2/3
Electrical characteristics (Ta = 25
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
40
32
5
-
-
-
-
-
-
-
-
-
-
-
250
6.5
-
-
-
1
1
0.6
-
-
V
I
C
=
100
A
I
C
=
1mA
I
E
=
100
A
V
CB
=
20V
V
EB
=
4V
V
CE
=
3V, I
C
=
100mA
I
C
/I
B
=
500mA/50mA
V
CE
=
5V, I
E
= -
20mA, f
=
100MHz
V
CB
=
10V, I
E
=
0A, f
=
1MHz
V
V
A
A
120
-
390
-
V
MHz
pF
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance


Packaging Specifications and h
FE
TP
5000
h
FE
QR
2SC1741S
Type
Package
Code
Taping
Basic ordering unit (pieces)


h
FE
values are classified as follows:
Item
Q
R
h
FE
120 to 270
180 to 390





Electrical characteristic curves
0.8
0.2
0.4
0.9
0.7
0.5
1.1
0.3
1.0
0.6
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
Ta
=
100
C
-
25
C
80
C
25
C
-
55
C
V
CE
=
6V
COLLECTOR CURRENT : I
C
(
mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
1
0
2
3
4
5
0
100
50
0.50mA
0.45mA
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
I
B
=
0A
Ta
=
25
C
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Grounded emitter output
characteristics(
)
1
0
2
3
4
5
0
500
400
300
200
100
2mA
1.8mA
1.6mA
1.4mA
1.2mA
0.2mA
0.4mA
0.6mA
0.8mA
1.0mA
I
B
=
0A
Ta
=
25
C
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.3 Grounded emitter output
characteristics(
)

2SC1741S
Transistors
Rev.A 3/3

0.5
1
2
5
10
20
50 100
1000
200
500
0.2
0.5
1
0.02
0.05
0.1
Ta
=
25
C
Ta
l
C
/l
B
=
10
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current
500 1000
0.1
200
10
0.2
50 100
0.5
20
1
2
5
20
10
50
100
200
500
1000
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Ta
=
100
C
75
C
50
C
25
C
0
C
-
25
C
-
50
C
V
CE
=
3V
Fig.5 DC current gain vs. collector current
Fig. 6 Gain bandwidth product vs.
emitter current
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Ta
=
25
C
V
CE
=
5V
-
0.5
-
1
-
2
-
5
-
10
-
20
-
50
50
100
200
500

0.5
1
2
5
10
20
50
5
2
10
20
50
Cib
Cob
Ta
=
25
C
f
=
1MHz
I
E
=
0A
I
C
=
0A
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob
(
pF)
EMITTER INPUT CAPACITANCE : Cib
(
pF)
Fig.7 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Appendix
Appendix1-Rev1.1


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The contents described herein are subject to change without notice. The specifications for the
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