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Электронный компонент: 2SC2413K

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2SC5659 / 2SC4618 / 2SC4098 /
Transistors
2SC2413K / 2SC2058S
Rev.A 1/3
High-frequency Amplifier Transistor
(25V, 50mA, 300MHz)
2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K /
2SC2058S

Features
1) Low collector capacitance. (Cob : Typ. 1.3pF)
2) Low rbb, high gain, and excellent noise characteristics.

Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
40
25
5
50
0.25
150
-
55 to
+
150
Unit
V
V
V
mA
0.2
0.15
2SC2058S
2SC4098, 2SC2413K
2SC5659, 2SC4618
W
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature

Packaging specifications and h
FE
Type
2SC4618
EMT3
TL
3000
2SC4098
UMT3
T106
3000
2SC2413K 2SC2058S
SMT3
T146
3000
SPT
P
P
P
P
P
A
2SC5659
VMT3
T2L
8000
A
TP
A
A
-
5000
Denotes h
FE
Package
h
FE
Code
Basic ordering unit
(pieces)
Marking


















External dimensions (Unit : mm)
2SC4618
ROHM : EMT3
EIAJ : SC-75A
(3) Collector
(1) Emitter
(2) Base
0.7
0.15
0.1Min.
0.55
0to0.1
0.2
1.6
1.6
1.0
0.3
0.8
(2)
0.5
0.5
(3)
0.2
(1)
2SC4098
ROHM : UMT3
EIAJ : SC-70
(3) Collector
(1) Emitter
(2) Base
Each lead has same dimensions
1.25
2.1
0.3
0.15
0to0.1
0.1to0.4
( 3
)
0.9
0.7
0.2
0.65
( 2
)
2.0
1.3
( 1
)
0.65
2SC2413K
ROHM : SMT3
EIAJ : SC-59
(3) Collector
(1) Emitter
(2) Base
Each lead has same dimensions
0.8
0.15
0to0.1
0.3to0.6
1.1
( 2
)
( 1
)
2.8
1.6
0.4
( 3
)
2.9
1.9
0.95
0.95
2SC5058S
ROHM : SPT
EIAJ : SC-72
0.45
2.5
(1) (2) (3)
(3) Base
(1) Emitter
(2) Collector
( 15Min.
)
5
3
3Min.
Taping specifications
0.45
0.5
4
2
2SC5659
ROHM : VMT3
(1) Base
(3) Collector
(2) Emitter
0to0.1
(3)
0.32
0.8
1.2
0.13
0.5
0.22
0.4
0.4
1.2
0.8
0.2
0.15Max.
0.2
(2)
(1)

2SC5659 / 2SC4618 / 2SC4098 /
Transistors
2SC2413K / 2SC2058S
Rev.A 2/3
Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
f
T
Cob
40
25
5
-
-
150
-
-
-
-
-
-
300
1.3
-
-
-
0.5
0.5
-
2.2
V
V
V
A
A
MHz
pF
I
C
=50
A
I
C
=1mA
I
E
=50
A
V
CB
=24V
V
EB
=3V
V
CE(sat)
-
0.1
0.3
V
I
C
/I
B
=10mA/1mA
h
FE
-
82
180
-
V
CE
=6V, I
C
=1mA
V
CE
=6V, I
E
=
-
1mA, f
=100MHz
V
CB
=6V, I
E
=0A, f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Transition frequency
Output capacitance
Collector-emitter saturation voltage
DC current transfer ratio

Electrical characteristics curves
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Ground emitter output characteristics
2
4
6
8
10
2
4
6
8
10
0
I
B
=
0
A
8
16
24
32
40
48
56
64
72
80
Ta
=
25
C
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.2 Ground emitter propagation characteristics
0
0.1
0.2
0.5
1
2
5
10
20
50
0.2
0.6
0.4
0.8 1.0 1.2 1.4 1.6
Ta
=
100
C
Ta
=
25
C
Ta
=
-
55
C
V
CE
=
6V
COLLECTOR CURRENT : I
C
(mA)
DC CURRENT GAIN : h
FE
Fig.3 DC current gain vs. collector current ( )
0.2
0.5 1
2
5
10
20
50 100
20
50
100
200
10
Ta
=
25
C
V
CE
=
5V
3
V
1
V


COLLECTOR CURRENT : I
C
(mA)
DC CURRENT GAIN : h
FE
Fig.4 DC current gain vs. collector current ( )
0.2
0.5 1
2
5 10
20
50 100
20
50
100
200
10
V
CE
=
5V
Ta
=
100
C
25
C
-
55
C
Fig.6 Collector-emitter saturation voltage
vs. collector current ( )
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR SATURATION VOLTAGE
: V
CE(sat)
(V)
0.2
0.5 1
2
5 10
20
50 100
0.02
0.05
0.1
0.2
0.01
I
C
/I
B
=
10
Ta
=
100
C
25
C
-
55
C
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR SATURATION VOLTAGE
: V
CE(sat)
(V)
Fig.5 Collector-emitter saturation voltage
vs. collector current ( )
0.2
0.5 1
2
5 10
20
50
0.02
0.05
0.1
0.2
0.01
I
C
/I
B
=
50
20
10
Ta
=
25
C









2SC5659 / 2SC4618 / 2SC4098 /
Transistors
2SC2413K / 2SC2058S
Rev.A 3/3

COLLECTOR OUTPUT CAPACITANCE
: C
ob
(pF)
EMITTER INPUT CAPACITANCE
: C
ib
(pF)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.8 Capacitance vs. voltage
0.1
0.5
1
2
5
10
20
1
2
5
Ta
=
25
C
f
=
1MHz
I
C
=
0A
C
ob
C
ib
I
E
=
0A
Fig.9 Collector to base time constance
vs. emitter current
-
0.1
-
0.2
-
0.5
-
1
-
2
-
5
-
10
10
20
50
100
Ta
=
25
C
f
=
31.8MHz
V
CE
=
6V
COLLECTOR TO BASE TIME CONSTANT : C
C

rbb'
(ps)
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY
: f
T
(MHz)
EMITTER CURRENT : I
E
(mA)
Fig.7 Gain bandwidth product vs.emitter current
-
1
-
2
-
5
-
10
-
20
-
50
200
100
500
1000
Ta
=
25
C
V
CE
=
6V

Appendix
Appendix1-Rev1.1


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appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
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Notes
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means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
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are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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