2SC4102 / 2SC3906K / 2SC2389S
Transistors
High-voltage Amplifier Transistor
(120V, 50mA)
2SC4102 / 2SC3906K / 2SC2389S
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!
!
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Features
1) High breakdown voltage. (BV
CEO
= 120V)
2) Complements the 2SA1579 / 2SA1514K / 2SA1038S.
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!
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Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
2SC4102 / 2SC3906K
2SC2389S
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
120
120
5
50
0.2
0.3
150
-
55~
+
150
Unit
V
V
V
mA
W
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
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!
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Packaging specifications and h
FE
Type
2SC2389S
SPT
RS
-
TP
5000
2SC3906K
SMT3
RS
T
T146
3000
2SC4102
UMT3
RS
T
T106
3000
Package
h
FE
Code
Marking
Basic ordering unit (pieces)
Denotes h
FE
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!
!
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External dimensions (Units : mm)
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
2SC3906K
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
2SC4102
(1) Emitter
(2) Base
(3) Collector
1.25
2.1
0.3
0.15
0~0.1
0.1Min.
( 3
)
0.9
0.7
0.2
0.65
( 2
)
2.0
1.3
( 1
)
0.65
Each lead has same dimensions
0.8
0.15
0~0.1
0.3Min.
1.1
( 2
)
( 1
)
2.8
1.6
0.4
( 3
)
2.9
1.9
0.95
0.95
ROHM : SPT
EIAJ : SC-72
2SC2389S
(1) Emitter
(2) Collector
(3) Base
Each lead has same dimensions
0.45
2.5
(1) (2) (3)
( 15Min.
)
5
3
3Min.
0.45
0.5
4
2
Taping specifications
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Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
120
120
5
-
-
-
180
-
-
-
-
-
-
-
-
-
140
2.5
-
-
-
0.5
0.5
0.5
560
-
-
V
V
V
A
A
V
-
MHz
pF
I
C
=
50
A
I
C
=
1mA
I
E
=
50
A
V
CB
=
100V
V
EB
=
4V
I
C
/I
B
=
10mA/1mA
V
CE
=
6V, I
C
=
2mA
V
CE
=
12V, I
E
=-
2mA, f
=
100MHz
V
CB
=
12V, I
E
=
0A, f
=
1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
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