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Электронный компонент: 2SC4620

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2SC4505 / 2SC4620
Transistors
Rev.B
1/3
Power Transistor (400V, 0.1A)
2SC4505 / 2SC4620

Features
1) High breakdown voltage. (BV
CEO
= 400V)
2) Low saturation voltage,
typically V
CE (sat)
= 0.05V at I
C
/ I
B
= 10mA / 1mA.
3) High switching speed, typically tf = 1.7
s at Ic =100mA.
4) Complements the 2SC4505 and the 2SA1759.


Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
400
400
7
0.1
0.5
150
-
55 to +150
Unit
V
V
V
A(DC)
0.2
A(Pulse)
W
W
W
1
2
3
2
1
2SC4505
2SC4620
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
1 Single pulse, Pw
=
20ms, Duty
=
1/2
2 When mounted on a 40
40
0.7mm ceramic board.
3 When t=1.7mm and the foll collector area on the PC board is 1cm
2
or greater.



External dimensions (Unit : mm)
Taping specifications
ATV
(1)Emitter
(2)Collector
(3)Base
0.45
1.05
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1.0
14.5
0.9
4.4
2.5
MPT3
(1)Base
(2)Collector
(3)Emitter
1.5
0.4
1.6
0.5
3.0
0.4
0.4
1.5
1.5
(3)
(2)
(1)
4.5
0.5
4.0
2.5
1.0
Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
400
400
7
-
-
-
82
-
-
-
-
-
-
-
0.05
-
20
7
-
-
-
10
10
0.5
270
-
-
V
V
V
A
A
V
-
MHz
pF
I
C
=
50
A
I
C
=
1mA
I
E
=
50
A
V
CB
=
400V
V
EB
=
6V
I
C
/I
B
=
10mA/1mA
V
BE(sat)
-
-
1.5
V
I
C
/I
B
=
10mA/1mA
V
CE
=
10V , I
C
=
10mA
V
CE
=
10V , I
E
=-
10mA , f
=
10MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
t
on
-
1
-
s
I
C
=-
100mA R
L
=
1.5k
t
stg
-
5.5
-
s
I
B1
=-
I
B2
=
10mA
t
f
-
1.7
-
s
V
CC
~
-
150V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Base-emitter saturation voltage
Turn-on time
Storage time
Fall time

Packaging specifications and h
FE
Type
2SC4505
MPT3
PQ
1000
T100
CE
2SC4620
ATV
PQ
2500
TV2
-
Denotes h
FE
Package
h
FE
Basic
ordering unit
(pieces)
Code
Marking
2SC4505 / 2SC4620
Transistors
Rev.B
2/3
Electrical characteristics (Ta=25
C)
0
2
4
6
8
10
40
80
120
160
200
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
0
Fig.1 Ground emitter output characteristics
Ta
=25
C
I
B
=
0mA
0.5mA
1.0mA
1.5mA
2.0mA
2.5mA
3.0mA
3.5mA
COLLECTOR CURRENT : I
C
(A)
BASE TO EMITTER VOLTAGE : V
BE
(V)
1.4 1.6
0.4 0.6
0.8
1.0
1.2
0.2
0
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
1
0.5
Ta=100
C
25
C
-
25
C
V
CE
=
3V
Fig.2 Ground emitter propagation characterisitics
Fig.3 DC current gain vs. collector current (
)
0.001 0.002
0.005
0.01 0.02
0.05
0.1 0.2
0.5
1
DC CURRENT GAIN : h
EF
COLLECTOR CURRENT : I
C
(A)
1
2
5
10
20
50
100
200
500
1000
V
CE
=
10V
5V
Ta
=25
C


Fig.4 DC current gain vs. collector current (
)
DC CURRENT GAIN : h
EF
COLLECTOR CURRENT : I
C
(A)
1
2
5
10
20
50
100
200
500
1000
0.001 0.002
0.005
0.01 0.02
0.05
0.1 0.2
0.5
1
V
CE
=
10V
-
25
C
Ta
=100
C
25
C
Fig.5 Collector-emitter saturation voltage
vs. collector current
0.001 0.002 0.005
0.01 0.02
0.05
0.1
0.2
0.5
1
0.02
0.05
0.1
0.2
0.5
1
2
5
10
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(A)
0.01
I
C
/I
B
=
20
10
5
Ta
=25
C
Fig.6 Collector-emitter saturation voltage
Collector-base saturation voltage vs. collector current
0.001 0.002 0.005
0.01 0.02
0.05
0.1 0.2
0.5
1
COLLECTOR SATURATION VOLTAGE :V
CE(sat)
(V
)
BASE SATURATION VOLTAGE :V
BE(sat)
(V)
COLLECTOR CURRENT : I
C
(A)
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
V
CE(sat)
100
C
25
C
-
25
C
25
C
Ta
=
-
25
C
Ta
=100
C
I
C
/I
B
=
10
V
BE(sat)


Fig.7 Gain bandwidth product vs. emitter current
-
0.005
-
0.01
-
0.02
-
0.05
-
0.1
-
0.2
-
0.5
-
1
-
2
2
10
20
50
100
200
500
5
1000
TRANSITION FREQUENCY : f
T
(MHz)
EMITTER CURRENT : I
E
(A)
1
Ta
=25
C
V
CE
=
10V
Fig.8 Collector output capacitance
vs. collector-base voltage
0.1 0.2
0.5
1
2
5
10
20
50
100
2
10
20
50
100
200
500
5
1000
COLLECTOR OUTPUT CAPACITANCE : C
ob
(p
F)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
1
Ta
=25
C
f
=
1MHz
I
E
=
0A
Fig.9 Safe operating area (2SC4505)
0.1
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
0.001
0.01
0.1
1
Ic Max. (Pulse
)
DC
Pw=100m
Pw=10m
Pw=1m
Ta
=25
C
Single
nonrepetitive pulse







2SC4505 / 2SC4620
Transistors
Rev.B
3/3

Fig.10 Safe operating area (2SC4620)
1
0.1
10
100
1000
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
0.001
0.01
0.1
1
Ta
=25
C
Single
nonrepetitive pulse
Ic Max. (Pulse)
DC
Pw=100m
Pw=10m
Pw=1m


-
V
BB
_
~6V
Pw_
~50
s
duty cycle 1%
-
V
CC
_
~150V
TUT
I
B1
V
IN
Pw
R
L
=1.5k
I
B2
Base current wave form
Collector current wave form
I
B1
90%
10%
I
B2
I
C
t
on
t
f
t
stg
Fig.11 Switching time mesurement circuit
Appendix
Appendix1-Rev1.1


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