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Электронный компонент: 2SC5001

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2SC5001
Transistors
Rev.A
1/2
Low V
CE(sat)
Transistor (Strobe flash)
(20V, 10A)
2SC5001

Features
1) Low saturation voltage, typically V
CE(sat)
= 0.13V at I
C
/
I
B
= 4A / 50mA.
2) High current capacity, typically I
C
= 10A for DC
operation and 15A for 10ms pulse.
3) Complements the 2SA1834.

Packaging specifications and h
FE
Type
2SC5001
CPT3
QR
TL
2500
Package
h
FE
Code
Basic ordering unit (pieces)
External dimentions (Unit : mm)
CPT3
(1)Base
(2)Collector
(3)Emitter
6.5
2.3
(2)
(3)
0.65
0.9
(1)
0.75
2.3
0.9
5.1
1.5
5.5
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
Tstg
Limits
30
20
6
10
1
10
150
-
55 to
+
150
Unit
V
V
V
I
B
2
A
A
15
A
W
W(Tc
=
25
C)
C
C
Single pulse Pw
=
10ms
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Base current

Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
f
T
Cob
30
20
6
-
-
-
-
-
-
-
-
-
-
0.13
150
220
-
-
-
1
1
0.25
-
-
V
V
V
A
A
V
MHz
pF
I
C
=
50
A
I
C
=
1mA
I
E
=
50
A
V
CB
=
20V
V
EB
=
5V
I
C
/I
B
=
4A/0.05A
V
BE(sat)
-
0.9
1.2
V
I
C
/I
B
=
4A/0.05A
h
FE1
120
-
390
-
V
CE
/I
C
=
2V/0.5A
V
CE
=
5V , I
E
= -
1.5A , f
=
50MHz
h
FE2
82
-
-
-
V
CE
=
2V , I
C
=
4A
V
CB
=
10V , I
E
=
0A , f
=
1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
DC current transfer ratio
2SC5001
Transistors
Rev.A
2/2
Electrical characteristics (Ta=25
C)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO VOLTAGE : V
CE
(V)
Fig.1 Ground emitter output characteristics
0
2
4
6
8
10
1
2
Ta
=
25
C
I
B
=
0mA
5mA
10mA
15mA
20mA
25mA
30mA
35mA
40mA
45mA
50mA
COLLECTOR CURRENT : I
C
(A)
BASE TO EMITTER VOLTAGE : V
BE(on)
(V)
Fig.2 Ground emitter propagation
characteristics
1.4
0.4
0.6
0.8
1.0
1.2
0.2
0
1m
2m
5m
10m
20m
50m
100m
200m
500m
1
2
5
10
V
CE
=
2V
Ta
=
125
C
25
C
-
40
C
20m
1
2
5
10
20
50m
100m 200m 500m
DC CURRENT GAIN : h
EF
COLLECTOR CURRENT : I
C
(A)
10
20
50
100
200
500
1000
2000
5000
10000
Fig.3 DC current gain vs. collector current
V
CE
=
5V
2V
1V
Ta
=25
C


10m 20m
50m
100m 200m
500m
1
2
5
10 20
2
5
10
20
50
100
200
500
1000
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR CURRENT : I
C
(A)
1
Fig.4 Collector-emitter saturation voltage
vs. collector current
I
C
/I
B
=
80
20
50
Ta
=25
C
-
10m
-
100m
-
1
-
10
TRANSITION FREQUENCY : f
T
(MHz)
EMITTER CURRENT : I
E
(A)
1
5
2
10
20
50
100
200
500
1000
Fig.5 Gain bandwidth product
vs. emitter current
V
CE
=
5V
Ta
=
25
C
f
=
50MHz
0.05
0.1
0.2
0.5
1
2
5
10
20
50
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
50
20
10
100
200
500
1000
2000
5000
10000
Fig.6 Collector output capacitance
vs. collector-base voltage
I
E
=
0A
Ta
=
25
C
f
=
1MHz


0.01 0.02
0.05
0.1 0.2
0.5
1 2
5
10 20
50 100
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
500m
200m
100m
50m
20m
10m
1
2
5
10
20
50
100
Fig.7 Safe operating area
Ta
=
25
C
DC
Pw
=
10ms
Pw
=
100ms
Appendix
Appendix1-Rev1.1


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